BTS117TC
Abstract: HITFET GPT09085 PG-TO263-3-2
Contextual Info: Smart Low Side Power Switch HITFET BTS 117TC Features Product Summary • Logic Level Input Drain source voltage VDS 60 • Input Protection ESD On-state resistance RDS(on) 100 mΩ •=Thermal shutdown with latch Current limit I D(lim) 7 A • Overload protection
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HITFET
Abstract: GPT09085 PG-TO263-3-2
Contextual Info: Smart Low Side Power Switch HITFET BTS 133TC Product Summary Features Drain source voltage 60 V • Logic Level Input VDS On-state resistance 50 mΩ • Input Protection ESD RDS(on) Current limit 21 A •=Thermal shutdown with latch I D(lim) Nominal load current
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21n50c3
Abstract: TRANSISTOR SMD 2x t AN-TO220-3-31-01 S4565 s4585 SPA21N50C3 SPB21N50C3 SPI21N50C3 SPP21N50C3 21N50C
Contextual Info: Preliminary data SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31
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spp21n50c3spb21n50c3spi21n50c3spa21n50c3+11p-to220-3-31p-to262-3-1p-to263-3-2p-to220-3-1p-to-220-3-3121n50c3transistor smd 2x tan-to220-3-31-01s4565s458521n50c
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TLE7274-2D
Abstract: 431 regulator
Contextual Info: TLE7274-2 5-V Low Dropout Voltage Regulator TLE7274-2E TLE7274-2D TLE7274-2G Data Sheet Rev. 1.01, 2011-11-30 Automotive Power 5-V Low Dropout Voltage Regulator 1 TLE7274-2 Overview Features • • • • • • • • • Ultra Low Current Consumption 20 A
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tle7274-2tle7274-2etle7274-2dtle7274-2g+2pg-ssop-14431 regulator
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141TC
Abstract: BTS141TC HITFET GPT09085 PG-TO263-3-2
Contextual Info: Smart Low Side Power Switch HITFET BTS 141TC Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection ESD On-state resistance RDS(on) 28 mΩ •=Thermal shutdown with latch Current limit I D(lim) 25 A • Overload protection
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DIN 6784
Abstract: P-TO218-AA P-DSO-8-6 SMD transistor 2x sot 23 GPT09050 GPT09051 GPT09244 P-TO251-3-1 GPT05155 GPT05156
Contextual Info: Gehäusemaßbilder Package Outlines Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) P-DSO-8-6/-7 Gewicht etwa 0.15 g Approx. weight 0.15 g 4 1 Bild 16 Figure 16 P-TO218-AA (P-TO218-2-1)
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p-to218-aap-to218-2-1gpt05156gpt05158+10o-92-e6288gpt05548din 6784p-dso-8-6smd transistor 2x sot 23gpt09050gpt09051gpt09244p-to251-3-1gpt05155
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DIN 6784
Abstract: P-DIP-6 GPT09085 GPT05157 GPT05158 GPT05548 GPT09050 GPT09051 GPT05155 GPT05156
Contextual Info: Gehäusemaßbilder Package Outlines Gehäusemaßbilder Package Outlines Maße in mm, wenn nicht anders angegeben (Dimensions in mm, unless otherwise specified) P-DIP-6 1 Bild 1 Figure 1 4.2 max. 3.5 -0.2 P-DIP-6 Option 6 0.5 min. 1 min. 3.5 ±0.3 2.54 0.45 +0.1
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04N50C3
Abstract: TRANSISTOR SMD MARKING CODE 2x SPA04N50C3 04N50 application note AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 2x I 04n50c TRANSISTOR SMD 2X K TRANSISTOR SMD 2x t SPB04N50C3
Contextual Info: Preliminary data SPP04N50C3, SPB04N50C3 SPA04N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2
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spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+11p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3transistor smd marking code 2x04n50application note an-to220-3-31-01transistor smd marking code 2x i04n50ctransistor smd 2x ktransistor smd 2x t
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