GM23C Search Results

Contextual Info: 4% G M 23C8100 GoldStar 512Kx 16/IM GOLDSTAR ELECTRON CO., LTD. X 8 BIT CMOS MASK ROM Pin Configuration 42 DIP Top View D escription The GM23C8100 high perform ance read only m em ory is organized either as 1,048,576x8 bit (Byte Mode) or as 524,288 x 16 bit (Word M ode|

Contextual Info: PRELIMINARY SPECIFICATION Rev 1 GM23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description Pin Configuration The GM23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be

23C4000

Contextual Info: GM23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is

Contextual Info: GM 23C 8100 GoldStar 5 1 2 K x 1 6 /IM GOLDSTAR ELECTRON CO., LTD. X 8 B IT C M O S M A SK R Ö M Description Pin Configuration The GM23C8100 high performance read only memory is organized either as 1,048,576x8 bit Byte Mode or as 524,288 x 16 bit (Word Mode)

Contextual Info: @ LG Semicon. Co. LTD Description Fin Configuration The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The GM23C16050 offers automatic power down controlled by the mask

GM23C32200AFW

Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C32200AFW high perform ance read only memory is organized either as 4,194,304 x 8 byte mode or 2,097,152 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure

4023 Ci

Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration 36 DIP The GM23C64001 high performance read only memory is organised as 8,388,606 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation, because of its

Contextual Info: W» LG Semicon. Co. LTD Description Pin Configuration The GM23C8100A high performance read only memory is organized as 1,048,576 x 8 bit Byte Mode or as 524,288 x 16 bit (Word Mode) followed by BHE mode select. The GM23C8100A offers automatic power down controlled by

GM23C8100BFW

Abstract: 23C8100B
Contextual Info: @ LG Semicon. Co. LTD Description The GM23C8100B high performance read only memory is organized either as 1,048,576 x 8 byte mode or 524,288 x 16 bits (word mode) and has an access time of 120/15Qns. The GM23C8100B offers automatic power down controlled by the mask

Contextual Info: GoldStar GM23C8000A 1,048,576 WORDS X8BIT CMOS MASK ROM GOLDSTAR ELECTRON CO, LTD. Description The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the

wja9

Contextual Info: G M 23 C 16000 A LG Semicon Co.,Ltd. 2M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16000A high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select.

Contextual Info: G M 2 3 C 10 0 0 LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The GM23C1000 is high performance read only memory organized as 131,072 words by 8 bits. It is designed to be compatible with all micro-processors and similar applications

GM23C4000A

Contextual Info: GM23C4000A LG Semicon Co.,Ltd. 52 4 ,2 8 8 W O R D S x 8 B IT CM O S M A SK R O M Pin Configuration Description 32 DIP/SOP T he G M 2 3 C 4 0 0 0 A high perform ance read only m em ory is organized as 524,288 w ords by eight bit and has an access tim e o f 120/150ns. It is designed to

Contextual Info: GM23C32001A LG Semicon Co.,Ltd. 4 ,1 9 4 ,3 0 4 W O R D S X 8 BIT CM O S M A SK R O M Description Pin Configuration 36 DIP T he G M 2 3 C 3 2 0 0 1 A high perform ance read only m em ory is organised as 4,19 4 ,3 0 4 x 8 bits and has an access tim e o f 120ns. It needs no external control

GM23C410

Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM28C4100A high performance read only memory is organized as 524,288 x 8 bit Byte Mode or as 262,144 x 16 bit (Word Mode) followed by BHE mode select. The GM23C4100A offers automatic power down controlled by

23C32000

Abstract: 23c3200 M23C32000
Contextual Info: GoldStar GM23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because

23C8001

Abstract: 02c15 GM23C8001
Contextual Info: ¿fe GM23C8001 GoldStar 1,048,576 WORDSx 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C8001 high performance Read Only Memory is organized as 1,048,576 words by 8 bits and has an access tim e of 120ns. It needs no

GM23C4000

Contextual Info: PRELIMINARY SPECIFICATION Rev 1 G M 23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description The GM23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be compatible with all microprocessors and similar ap­

Contextual Info: GM23C16050 LG Semicon Co.,Ltd. 2 M x 8 / IM x 16 BIT CMOS MASK ROM Pin Configuration Description The GM23C16050 high performance read only memory is organized either as 2,097,152 x 8 bit Byte Mode or as 1,048,576 x 16 bit (Word Mode) followed by BHE mode select. The

Contextual Info: GM23C16001 LG Semicon Co.,Ltd. Description 2,097,152 W ORDS x 8 BIT CMOS M ASK ROM Pin Configuration The G M 23C 16001 high performance read only memory is organized as 2,097,152 words by 8 bits and has an access time o f 120ns. It needs no external control clock to assure simple operation.

Contextual Info: GM23C8000A LG Semicon Co.,Ltd. 1,048,576 w o r d s x 8 b i t CMOS MASK ROM Pin Configuration Description 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers

GM23C2000

Abstract: 23c2000
Contextual Info: GM23C2000 LG Semicon Co.,Ltd. 262,144 W ORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The GM 23C2000 high perfimance read only memory is organized as 262,144 words by eight bits and has an access time o f 150ns. It is designed to be compatible with all

LG 631 IC

Abstract: ic lg 631
Contextual Info: @ LG Semicon. Co. LTD. Description Pin Configuration The GM23C64000FW high performance read only memory is organized either as 8,388,606 x 8 byte mode or 4,194,304 x 16 bits (word mode) and has an access time of 120/150ns. It needs no external control clock to assure

Contextual Info: GM23C16001 GoldStar GOLDSTAR ELECTRON CO., LTD. 2,097,152 WORDS x 8 BIT CMOS MASK ROM Pin Configuration Description The G M 23C 16001 high performance Read Only Memory is organized as 2,097,152 words by 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation,