23C3200 Search Results

01C09

Contextual Info: GoldStar 23C32000FW 4M x 8/2M x 16BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C32000FW high performance read only memory is organized either as 4,194,304 x 8 bite mode or 2,097,152x 16 bits (word mode) and has an access time of 120/150 ns. It needs no ex­

23C32000a

Abstract: ICX 639 23c3200
Contextual Info: 23C32000A LG Semicon Co.,Ltd. 2,097,152 x 16 BIT CMOS MASK ROM Pin Configuration Description 42 DIP The G M 23C32000A high performance read only memory is organized as 2,097,152 x 16 bits and has an access time o f 120/150ns. It needs no external control clock to assure simple operation, because of

23c3200

Contextual Info: PRELIMINARY KM 23C3200C^^ CMOS MASK ROM 32M-Bit 4M x 8/2M x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 8 (byte mode) 2,097,152 X 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V

23C32000

Contextual Info: CMOS MASK ROM 23C32000C 32M-Bit 2Mx16 CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • • • • The KM 23C32000C is a fully static m ask program m able ROM • • • • 2,097,152x16 bit organization Fast access tim e : 100ns(Max.) Supply voltage : single +5V

23C32000

Contextual Info: 23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

23C32000

Abstract: 23C32000CT 23c3200
Contextual Info: 23C32000C E T_ CMOS MASK ROM 32M-Bit (4Mx8 2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

23C32000

Abstract: 23c3200 M23C32000
Contextual Info: GoldStar 23C32000 2M x 16 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Description Pin Configuration The G M 23C 32000 high performance read only memory is organized as 2,097,152 x 16 bits and has an access time of 120/150ns. It needs no external control clock to assure simple operation, because

Contextual Info: 23C32005BG CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access Him Random Access : IQOnsfMax.) Page Access : 30ns(Max.) • 8 w ords/16 bytes page access

23c3200

Abstract: 23C32000
Contextual Info: CMOS MASK ROM 23C32000CG 32M-Bit 4Mx8 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption

23C3200

Abstract: 23C32000
Contextual Info: 23C32000C CMOS MASK ROM 32M-Bit 2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50(jA(Max.) • Fully static operation