23C4000 Search Results

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C 23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET 23C4000S

Contextual Info: 23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V

GM23C4000

Contextual Info: PRELIMINARY SPECIFICATION Rev 1 G M 23C4000 524,288 X 8 BITS CMOS STATIC READ ONLY MEMORY Description The 23C4000 high-performance Read Only Me­ mory is organized as 524,288 words by eight bits and has an access time of 150 ns. It is designed to be compatible with all microprocessors and similar ap­

Contextual Info: @ LG Semicon. Co. LTD. Description The GM 23C4000B high perform ance read only memory is organized either as 524,288 x 8 bits and has an access time of 100/120/150ns. The 23C4000B offers automatic power down controlled by the make programmed CE or CE input. The low

KM23C4000AG

Abstract: KM23C4000A
Contextual Info: CMOS MASK ROM KM 23C4000A 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization Tne K M 2 3 C 4 0 0 0 A is a fully static mask p ro g ra m m a b le R O M o rg a n iz e d 5 2 4 2 8 8 X 8 bit. It is fa b ric a te d u sing

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Contextual Info: KM 23C4000A CMOS MASK ROM 4M -Bit 5 1 2 K x8 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization Trie K M J J G 4 U 0 U A is a fully s ta tic m ask p ro g ra m m a b le R O M o rg a n iz e d 5 2 4 , 2 8 8 X 8 b it It is fa b ric a te d u sin g

524,288 x 8 bit

Abstract: NCC12 UM23C4000 UM-23
Contextual Info: UNITED MICROELECTRONICS 30E D • TBSSÛS2 PD00ai3 b 262,144X 16/524,288X 8-BIT UM 23C4000 CMOS MASK-PROGRAMMABLEi ROM Features ■ ■ ■ ■ ■ ■ ■ ■ ■ Pin Configuration 2 6 2 ,144x16-bit/524,288x8-bit organization Single +5V power supply Access times: 150/200 ns max.

23C4000

Contextual Info: 23C4000 GoldStar 524,288 WORDS x 8 BIT CMOS MASK ROM GOLDSTAR ELECTRON CO., LTD. Pin Configuration 32 DIP Top View D escription The G M 23C 4000 high-perform ance Read Only M em ory is organized as 524,288 w ords by eight bits and has an access tim e o f 150/200ns. It is

Contextual Info: 23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)

Contextual Info: 23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)

Contextual Info: 23C4000 4M-BIT MASK ROM 8 BIT OUTPUT FEATURES ORDER INFORMATION • Bit organization - 512K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 35mA - Standby: 100mA • Supply voltage - 5V ± 10% • Package - 32 pin PDIP (600 mil)

Contextual Info: 23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The 23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g

Contextual Info: SAM SUN G E L E C T R O N I C S 42E » INC B 7Tb41M2 001113b 3 H S M G K KM 23C 4000A CMOS MASK ROM ¡-v q c -B -fS 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4Q00A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using

23C8001A

Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28

MX23C4000PC-12

Abstract: 23C4000 MX23C4000PC-10 MX23C4000PC-90 MX23C4000 MX23C4000MC-10 MX23C4000MC-90 MX23C4000PC-15 MX23C4000QC-10 MX23C4000QC-12
Contextual Info: 23C4000 4M-BIT MASK ROM 8 BIT OUTPUT ORDER INFORMATION FEATURES • Bit organization - 512K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 35mA - Standby: 100uA • Supply voltage - 5V ± 10% • Package - 32 pin PDIP (600 mil)

Contextual Info: M X IC 23C4000 4M -B IT 512K x 8 CMOS MASK ROM FEATURES 512K x 8 organization Single +5V power supply Fast access time: 100/120/150/200ns (max) Totally static operation Completely TTL compatible • Operating current: 40m A • Standby current: 100|xA

Contextual Info: 23C4000 4M-BIT MASK ROM 8 BIT OUTPUT FEATURES O R D E R INFO RM A TIO N • Bit organization - 512K x 8 (byte mode) • Fast access time - Random access: 90ns (max.) • Current - Operating: 35mA - Standby: 100mA • Supply voltage - 5V ± 10% • Package

Contextual Info: 23C4000H CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The 23C4000H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •

23C4000-20

Contextual Info: m A M 23C4000 MACRONIX, INC. 4IVI-BITI5-12K x 8 CMOS MASK ROM FEATURES • • • • • Operating current: 40mA Standby current: 100 1 A Package type: - 32 pin plastic DIP - 32 pin plastic SOP 512K x 8 organization Single +5V power supply Fast access time: 120/150/200ns (max)

23C4000

Contextual Info: GOLDSTAR TECHNOLOGY INC/ 4?E D • 402075? 00035^0 ö ■ GoldStar GST T - V é '/3 ~ / 5 23C4000 524,288 WORDS x 8 BIT CMOS MASK ROM Description Pin Configuration The 23C4000 high-performance Read Only Memory is organized as 524,288 words by eight bits and has an access time of 150/200ns. It is

23C4000

Abstract: ci 0804
Contextual Info: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The 23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar

Contextual Info: 23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 5 2 4 ,2 8 8 x 8 bit o rg a n iz a tio n T h e K M 2 3 C 4 0 0 0 D (E )T Y is a fu lly s ta tic m a sk p ro g ra m m a b le • A c c e s s tim e : 8 0 n s (M a x .)

Contextual Info: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption