GI2402 Search Results

Contextual Info: GI2401, GI2402, GI2403, GI2404 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack TO-220AB • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency

Contextual Info: GI2401, GI2402, GI2403, GI2404 www.vishay.com Vishay General Semiconductor Dual Common Cathode Ultrafast Plastic Rectifier FEATURES • Power pack TO-220AB • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder Dip 260 °C, 40 seconds

ir 036

Contextual Info: GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s

BYW19-1000

Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
Contextual Info: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50

Contextual Info: GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s

Contextual Info: GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 s

Contextual Info: GI2401 THRU GI2404 GLASS PASSIVATED PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 16.0 Amperes FEATURES TO-220AB 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14)

Contextual Info: BYV32-50 thru BYV32-200 Dual Ultrafast Plastic Rectifier Reverse Voltage 50 to 150V Forward Current 18A TO-220AB Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive centertap

GI2401

Abstract: GI2402 GI2403 GI2404
Contextual Info: GI2401 THRU GI2404 GLASS PASSIVATED PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 16.0 Amperes FEATURES TO-220AB ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive centertap

GI2401

Abstract: GI2402 GI2403 GI2404 JESD22-B102D J-STD-002B
Contextual Info: GI2401 thru GI2404 Vishay General Semiconductor Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction TO-220AB • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Solder dip 260 °C, 40 seconds

TO263AA

Abstract: SMA UF4007 FEP16BT us1m minimelf FEP30DP DO-214AC schottky es1d FEP30GP FEP16GT center tap diodes 100V 15 A FEP16HT
Contextual Info: FAST EFFICIENT RECTIFIERS 1.0 AMPERE TO 30.0 AMPERES INTRODUCTION TO FAST EFFICIENT RECTIFIERS General Semiconductor’s Fast Efficient Rectifiers FER are a natural extension of our Schottky product portfolio. This is accomplished by offering very fast reverse recovery times (as low as 15 nanoseconds) and voltage levels as high as

1N5498

Abstract: CA542 AP6KE91A CGJ-1 DF06S 214 H AG 48 2KBP10M I1404 P6KE200 602 CA-592 BZWO4P
Contextual Info: NUMERICAL INDEX 1.5KA6.8.A .564 1.5KE22C.CA. 592 1.5KE170.A. 592 1N4383GP. 1.5KA7.5.A.564 1.5KE24.A.592 1ÆKE170C.CA.592 1N4384GP.244

G12401

Contextual Info: GI2401 THRU GI2404 GLASS PASSIVATED PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 16.0 Amperes FEATURES TO-22QAB ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive centertap

FED16BT

Abstract: FED30JP FED30HP FED16HT FED16FT FED30DP FED16CT FED30 FEP30DP FED16DT
Contextual Info: Glass Passivated Super Fast Rectifiers Part No. CrossReference Max. Average Rectified Current lo A FENF16AT FENF16BT FENF16CT FENF16DT FENF16FT FENF16GT FENF16HT FENF16JT FED16AT FED16BT FED16CT FED16DT FED16FT FED16GT FED16HT FED16JT FEDF16AT FEDF16BT FEDF16CT

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection