GHZ TRANSISTOR Search Results

GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
93425ADM/B	Rochester Electronics LLC	93425 - 1K X 1 TTL SRAM	PDF

GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AT-41486 Abstract: NF50 S21E AT41486 AT-41486-BLK AT-41486-TR1 Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT	Original	AT-41486 AT-41486 AT41486 RN/50 5965-8928E 5968-2031E NF50 S21E AT-41486-BLK AT-41486-TR1	PDF
Contextual Info: What HEWLETT* miltm PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz	OCR Scan	AT-41410 AT-41410 Rn/50	PDF
AT-41410 Abstract: AT41410 Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz	OCR Scan	AT-41410 AT-41410 Rn/50 AT41410	PDF
transistor TT 3043 Abstract: IJEAD Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP	OCR Scan	NE681 b4E752S D0hSb73 transistor TT 3043 IJEAD	PDF
AT-41400 Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41400 AT-41400 RN/50 5965-8922E AT-41400-GP4 NF50 S21E chip die npn transistor	PDF
AT-41410 Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41410 AT-41410 AT41410 RN/50 5965-8923E 41410 bipolar transistor 6 GHz UHF transistor GHz NF50 S21E	PDF
AT-41485 Abstract: agilent at41485 S parameters of 5.8 GHz transistor AT41485 NF50 S21E 16MSG Ghz dB transistor Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High Associated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz • High Gain-Bandwidth	Original	AT-41485 AT-41485 AT41485 RN/50 5965-8926E agilent at41485 S parameters of 5.8 GHz transistor NF50 S21E 16MSG Ghz dB transistor	PDF
MP4T856 Abstract: 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E Contextual Info: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features •High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz •High Gain Bandwidth Product •8-9 GHz fT •High Power Gain - \|S21E\|2 = 15 dB @ 1 GHz - \|S21E\|2 = 9 dB @ 2 GHz	Original	MP4T856 OT-23 OT-143 557 SOT-143 p-4 3000 478 150-1 MP4T85600 MP4T85633 MP4T85635 MP4T85639 S21E S22E	PDF
41470 Abstract: UHF transistor GHz AT-41470 NF50 S21E Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth	Original	AT-41470 AT-41470 RN/50 5965-8927E 5966-4946E 41470 UHF transistor GHz NF50 S21E	PDF
Contextual Info: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz	OCR Scan	AT-41486 vailable111 AT41486 5965-8928E 5968-2031E	PDF
chip die npn transistor Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz	OCR Scan	AT-41400 AT-41400 Rn/50 chip die npn transistor	PDF
transistor BF 697 Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507 Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE	Original	NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507	PDF
chip die npn transistor Abstract: ma4t856 Contextual Info: Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - \|S21E\|2 = 15 dB @ 1 GHz - \|S21E\|2 = 9 dB @ 2 GHz	Original	MA4T856 OT-23 OT-143 chip die npn transistor	PDF
AT-41410 Abstract: 41410 NF50 S21E Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth	Original	AT-41410 AT-41410 5965-8923E RN/50 41410 NF50 S21E	PDF

of ic UM 66 Abstract: AT-41400 AT-41400-GP4 NF50 S21E chip die npn transistor Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth	Original	AT-41400 AT-41400 RN/50 of ic UM 66 AT-41400-GP4 NF50 S21E chip die npn transistor	PDF
kf 203 transistor Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION	Original	NE681 NE681 NE68100 NE68118-T1 NE68119-T1 NE68130-T1 NE68133-T1B NE68135 kf 203 transistor 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor	PDF
AT-41486 Abstract: AT-41486-BLK AT-41486-TR1 NF50 S21E Silicon Bipolar Transistor Hewlett-Packard Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41486 • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.0 dB Typical at 1.0␣ GHz 13.0 dB Typical at 2.0␣ GHz • High Gain-Bandwidth	Original	AT-41486 AT-41486 RN/50 AT-41486-BLK AT-41486-TR1 NF50 S21E Silicon Bipolar Transistor Hewlett-Packard	PDF
AT-41485 Abstract: NF50 S21E AT41485 Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.5 dB Typical at 1.0␣ GHz 13.5 dB Typical at 2.0␣ GHz • High Gain-Bandwidth	Original	AT-41485 AT-41485 5965-8926E RN/50 NF50 S21E AT41485	PDF
RN50 Abstract: S parameters of 5.8 GHz transistor Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz	OCR Scan	AT-41485 AT-41485 Rn/50 RN50 S parameters of 5.8 GHz transistor	PDF
ca 9088 Abstract: 2SC5509 NE663M04 NE663M04-T2 S21E transistor c 6093 Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 15 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH IP3: NF = 27 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz	Original	NE663M04 IS21EI2 OT-343 NE663M04 ca 9088 2SC5509 NE663M04-T2 S21E transistor c 6093	PDF
Contextual Info: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz	OCR Scan	AT-41435 AT-41435 Rn/50	PDF
Contextual Info: AVANTEK INC EOE D AVANTEK • lim u h AT-60510 Up to 6 GHz Low Noise . Silicon Bipolar Transistor • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 dB typical at 4.0 GHz High Associated Gain: 12.0 dB typical at 2.0 GHz 7.5 dB typical at 4.0 GHz	OCR Scan	AT-60510	PDF
136.21 Abstract: AT42010 AT-42010 S21E Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz	Original	AT-42010 AT-42010 AT42010 RN/50 5965-8910E 136.21 S21E	PDF
micro-x 420 Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E Contextual Info: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz	Original	AT-42036 AT-42036 me10/-0 5980-1854E 5988-4735EN micro-x 420 AT-42036-BLK AT-42036-TR1 S21E	PDF

GHZ TRANSISTOR Search Results

GHZ TRANSISTOR Result Highlights (5)

GHZ TRANSISTOR Datasheets Context Search

AT-41486

AT-41410

transistor TT 3043

AT-41400

AT-41410

AT-41485

MP4T856

41470

chip die npn transistor

transistor BF 697

chip die npn transistor

AT-41410

of ic UM 66

kf 203 transistor

AT-41486

AT-41485

RN50

ca 9088

136.21

micro-x 420