GHZ TRANSISTOR Search Results

Contextual Info: What HEWLETT* miltm PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

AT-41410

Abstract: AT41410
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

AT-41400

Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

AT-41410

Abstract: 41410 bipolar transistor 6 GHz UHF transistor GHz AT41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth

41470

Abstract: UHF transistor GHz AT-41470 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

Contextual Info: What mLUM HEW LETT PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41486 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.0 dB Typical at 1.0 GHz 13.0 dB Typical at 2.0 GHz

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

AT-41485

Abstract: NF50 S21E AT41485
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41485 Features • Low Noise Figure: 1.4 dB Typical at 1.0␣ GHz 1.7 dB Typical at 2.0␣ GHz • High Associated Gain: 18.5 dB Typical at 1.0␣ GHz 13.5 dB Typical at 2.0␣ GHz • High Gain-Bandwidth

RN50

Abstract: S parameters of 5.8 GHz transistor
Contextual Info: What HEWLETT* mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41485 Features • Low N oise Figure: 1.4 dB Typical at 1.0 GHz 1.7 dB Typical at 2.0 GHz • High A ssociated Gain: 18.5 dB Typical at 1.0 GHz 13.5 dB Typical at 2.0 GHz

Contextual Info: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

136.21

Abstract: AT42010 AT-42010 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42010 Features • High Output Power: 12.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

AT-41435

Abstract: NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

8909E

Abstract: AT-42000 AT-42000-GP4 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

Contextual Info: T hat H E W IT T mL'ftm PACKARD Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low N oise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz

Contextual Info: Thal H e w lett WilEM P A C K A R D - Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 F eatures • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High A ssociated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz

AT-42035

Abstract: S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz

3525 "application note"

Contextual Info: 2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier ADL5321 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V

intel mpga478b MOTHERBOARD SERVICE MANUAL

Abstract: manual mpga478b motherboard pentium 4 motherboard CIRCUIT diagram mpga478b motherboard diagram mpga478b motherboard component layout mpga478b motherboard vrm pentium 4 478 SOCKET PIN LAYOUT intel mpga478b MOTHERBOARD installation MANUAL intel 775 motherboard diagram
Contextual Info: Intel Pentium® 4 Processor in the 478-pin Package at 1.50 GHz, 1.60 GHz, 1.70 GHz, 1.80 GHz, 1.90 GHz, and 2 GHz Datasheet Product Features • Available at 1.50, 1.60, 1.70, 1.80, 1.90 and 2 GHz ■ Binary compatible with applications running on previous members of the

Contextual Info: What H E W L E T T * mLliMPACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 12.5dBTypicaIGldBat2.0 GHz

AGRB10XM

Abstract: JESD22-C101A DSA00206784.txt
Contextual Info: Data Sheet April 2004 AGRB10XM 10 W, 1.0 GHz to 2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRB10 is a broadband, general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 1.0 GHz to 2.7 GHz operation.

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

314-106

Abstract: transistor c 6093 417-116 2SC5509 NE663M04 NE663M04-T2 S21E 10318 SOT-343 6428 flat
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 17 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz •