GHZ DB TRANSISTOR Search Results

8909E

Abstract: AT-42000 AT-42000-GP4 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

AT42070

Abstract: AT-42070 S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical G1 dB at 2.0 GHz 10.0 dB Typical G1 dB at 4.0 GHz

AT-42035

Abstract: S21E
Contextual Info: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz

AT-41400

Abstract: AT-41400-GP4 NF50 S21E chip die npn transistor
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

41470

Abstract: UHF transistor GHz AT-41470 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features • Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.5 dB Typical at 2.0 GHz 10.5 dB Typical at 4.0 GHz • High Gain-Bandwidth

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

AT41586

Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Contextual Info: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option

2SC5507

Abstract: NE661M04 NE661M04-T2 S21E 842 ic 2912
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE661M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 25 GHz • HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz •

TRANSISTOR 12 GHZ

Abstract: ATF-36077 amplifier TRANSISTOR 12 GHZ pseudomorphic HEMT ATF-36077-STR transistor atf ku-band lnb satellite
Contextual Info: 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT Technology • Ultra-Low Noise Figure: 0.5 dB Typical at 12 GHz 0.3 dB Typical at 4 GHz • High Associated Gain: 12 dB Typical at 12 GHz 17 dB Typical at 4 GHz

314-106

Abstract: transistor c 6093 417-116 2SC5509 NE663M04 NE663M04-T2 S21E 10318 SOT-343 6428 flat
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES • HIGH GAIN BANDWIDTH: fT = 17 GHz • HIGH POWER GAIN: IS21EI2 = 11 dB TYP at 2 GHz • LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz •

LP7512

Abstract: LP7512P70 MIL-HDBK-263 ultra low idss
Contextual Info: LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW • DESCRIPTION AND APPLICATIONS

ATF-44101

Abstract: transistor marking P1 ghz
Contextual Info: 2 – 8 GHz Medium Power Gallium Arsenide FET Technical Data ATF-44101 Features • High Output Power: 32.0 dBm Typical P1 dB at 4 GHz • High Gain at 1 dB Compression: 8.5 dB Typical G1 dB at 4 GHz • High Power Efficiency: 35% Typical at 4 GHz • Hermetic Metal-Ceramic

NESG2021M16

Abstract: NESG2021M16-T3-A S21E
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

INA-02100

Abstract: HP MMIC INA A005 chip die hp transistor ina 119
Contextual Info: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02100 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31.5 dB Typical at 0.5 GHz 25.0 dB Typical at 1.5 GHz • 3 dB Bandwidth:

3525 "application note"

Contextual Info: 2.3 GHz to 4.0 GHz ¼ Watt RF Driver Amplifier ADL5321 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM Operation: 2.3 GHz to 4.0 GHz Gain of 14.0 dB at 2.6 GHz OIP3 of 41.0 dBm at 2.6 GHz P1dB of 25.7 dBm at 2.6 GHz Noise figure: 4.0 dB at 2.6 GHz Power supply voltage: 3.3 V to 5 V

Silicon Bipolar Transistor

Abstract: MP4T56800 MP4T568 Medium Power Bipolar Transistors S21E S22E c 1685 transistor
Contextual Info: Medium Power, 12 Volt, High fT NPN Silicon Bipolar Transistor MP4T56800 V2.00 Features •High Output Power, 23 dBm P1dB @ 1 GHz •High Gain-Bandwidth Product, 4 GHz fT •High Power Gain, | S21E |2 = 12 dB @ 1 GHz GTU max. = 11 dB @ 2 GHz Description The MP4T568 is a medium power, high fT silicon NPN

Contextual Info: What mitim HPAECWKLAERTDT Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50Q Gain Block • Low Noise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth: DC to 2.8 GHz

MGA52563

Abstract: LL2012-F2N2 MGA52543 MGA-52543 MGA-52543-BLK MGA-52543-TR1 MGA-52543-TR2 MGA-52563
Contextual Info: Agilent MGA-52543 Low Noise Amplifier Data Sheet Features • Operating frequency: 0.4 GHz ~ 6.0 GHz • Minimum noise figure: 1.61 dB at 1.9 GHz • Associated gain : 15 dB at 1.9 GHz Description Agilent Technologies’ MGA-52543 is an economical, easy-to-use

LP3000

Abstract: LP3000SOT89 LP3000SOT89-1 LP3000SOT89-2 LP3000SOT89-3 MIL-HDBK-263
Contextual Info: LP3000SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 15 dB Power Gain at 1.8 GHz ♦ 1.3 dB Noise Figure ♦ 46 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS

NESG2101M16

Abstract: NESG2101M16-T3-A S21E
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz

LP1500SOT89

Abstract: LP1500-SOT89-2 LP1500 LP1500SOT89-1 LP1500SOT89-2 LP1500SOT89-3 MIL-HDBK-263
Contextual Info: LP1500SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17 dB Power Gain at 1.8 GHz ♦ 1.0 dB Noise Figure ♦ 44 dBm Output IP3 at 1.8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS

TRANSISTOR C 6090 lg

Abstract: TRANSISTOR C 6090 TC1101 8484 au
Contextual Info: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz

AT-64023

Abstract: S21E
Contextual Info: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic

marking 269-3 sot23

Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz