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Abracon Corporation


Abracon Corporation AMPMGFC-42.5000 MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Bulk (Alt: AMPMGFC-42.5000)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-42.5000					1 - 10 - 100 - 1000 $1.55 10000 $1.38	Get Quote
Avnet Abacus	AMPMGFC-42.5000			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-42.5000T MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000T	Reel			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-42.5000T					1 - 10 - 100 - 1000 $1.43 10000 $1.38	Get Quote
Avnet Abacus	AMPMGFC-42.5000T			113 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Abracon Corporation AMPMGFC-42.5000T3 MEMS Oscillator, 42.5 MHz, SMD, 1.6mm x 1.2mm, 25 ppm, 3.3 V, AMPM - Tape and Reel (Alt: AMPMGFC-42.5000T3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	AMPMGFC-42.5000T3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AMPMGFC-42.5000T3					1 - 10 - 100 - 1000 - 10000 $1.37	Get Quote
Avnet Abacus	AMPMGFC-42.5000T3			113 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

GFC42 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: M ITSU BISH I S E M IC O N D U C T O R < G a A s F ET > M GFC42V3742A p k e u hang«' N o t.« ^ ’5 «• so ^» am 3 .7 —4 .2 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N T h e M G F C 4 2 V 3 7 4 2 A is a n in te rn a lly im p e d a n c e -m a tc h e d	OCR Scan	GFC42V3742A	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pRÖ-Vn w>»'5n!>“ * M GFC42V6472A rV .;fvc^'on arS wc 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION TheM G FC 42V6472Aisan internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2	OCR Scan	GFC42V6472A 42V6472Aisan	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC42V778S 7 .7 —8.5GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC42V7785 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .7 - 8 .5 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGFC42V778S GFC42V7785 27C102P, RV-15 16-BIT)	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V5258 5 .2 —5 .8G H z BAND 1 6W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 4 2 V 5 2 5 8 is an in te rn a lly im pedance m atched GaAs p o w e r F E T especially designed fo r use in 5 . 2 — 5 . 8 G H z band a m p lifie rs . T h e h e rm e tic a lly sealed m eta l-c e ram ic	OCR Scan	GFC42V5258	PDF
PO31 Abstract: MGFC42V3742A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V3742A . " 3 .7 ~ 4 .2 G H z BAND 1 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION O UTLINE D R A W IN G The M G F C 4 2 V 3 7 4 2 A is a n in te rn a lly im p eda nce -m atche d GaAs power FET especially designed fo r use in 3.7 ~ 4.2	OCR Scan	MGFC42V3742A MGFC42V3742A -45dBc PO31	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V5964 5 .9 —6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC42V5964 is an internally impedance-matched GaAs power FE T especailly designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFC42V5964 GFC42V5964 27C102P, RV-15 T-46-13-25	PDF
pp gf Abstract: gfc42 M5M27C102 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42V7177 7.1—7.7GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M GFC42V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7 .1 —7.7 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFC42V7177 GFC42V7177 27C102P, RV-15 16-BIT) pp gf gfc42 M5M27C102	PDF
G25q Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC42VS258 5 . 2 - 5 . 8GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 2 V 5 2 5 8 is an internally impedance-matched GaAs power FE T especially designed fo r use in 5 .2 — 5 .8 GHz band amplifiers. The herm etically sealed metal-ceramic	OCR Scan	GFC42VS258 G25q	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42V 6472 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC42V6472 is an internally impedance-matched GaAs power FE T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	MGFC42V6472 27C102P, RV-15 16-BIT)	PDF
MGF2430A Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E	OCR Scan	12GHz MGF4919E MGF4914E MGF49T4D MGF4714AP MGF4914D MGF1923 MGF1902B MGF2430A MGF4919 MGF1402B MGF2430 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC42V4450 4 . 4 - 5 . OGHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION O UTLINE D R A W IN G Unit: millimeters inches The M G F C 4 2 V 4 4 5 0 is an internally impedance-matched GaAs power F E T especially designed for use i n 4 . 4 ~ 5 . 0	OCR Scan	MGFC42V4450 27C102P, RV-15	PDF
MGFC42V5964 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC42V5964 5 .9 — 6.4GH z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The OUTLINE DRAW ING M G F C 4 2 V 5 9 6 4 is an internally impedance-matched GaAs power F E T especailly designed fo r use in 5 .9 ~ 6.4 20.4 ± 0 .2 0 .8 0 3 + 0.008	OCR Scan	MGFC42V5964 MGFC42V5964 15GHz 40GHz 41GHz	PDF
7785A Abstract: FC36V Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *	OCR Scan	FC36V GFC38V3M FC38V GFC39V MGFC38V44SQA GFC39V80B3 GFC39V92B8 FC39V i742A 7785A	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> GFC42V3742 3 .7 —4.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING U n it: m illim e te rs in c h e s The M G F C 4 2 V 3 7 4 2 is an internally impedance-matched GaAs power F E T especially designed fo r use in 3.7 ~ 4.2	OCR Scan	MGFC42V3742 27C102P, RV-15	PDF