GERMANIUM DIODE DATA SHEET Search Results

Contextual Info: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.

gi diode

Abstract: diode gi GERMANIUM nec
Contextual Info: DATA SHEET PHOTO DIODE NDL5151P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^50 /¿m GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5151P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems, and features small dark current and high speed response.

Contextual Info: DATA SHEET PHOTO DIODE NDL5131P Series 1 300 nm OPTICAL FIBER COMMUNICATIONS ^30 fim GERMANIUM AVALANCHE PHOTO DIODE MODULE WITH SMF DESCRIPTION NDL5131P Series is a Germanium avalanche photo diode module with singlemode fiber. It is designed for long wavelength transmission systems, and features small dark current and high speed response due to 30 //m detecting

dl520

Contextual Info: N E C ELECTRONICS INC bEE J> • bM27SES DQ3ä071 510 ■ ! NECE DATA SHEET N EC ELECTRON DEVICE PHOTO DIODE NDL5102 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 /mi GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION N D L 5 10 2 is a Germanium Avalanche Photo diode especially designed fo r a detector of long wavelength fiber transmission

Contextual Info: N E C ELECTRONICS INC b2E D • ¡3427525 GG3fiGfl3 235 ■ NECE DATA SHEET NEC PHOTO DIODE NDL5105P, NDL5105P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COMMUNICATIONS 4 > 3 0 mty \ GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5105P and NDL5105P1 are Germanium Avalanche Photo Diodes w ith singlemode fiber, especially designed fo r detectors

Contextual Info: N E C ELECTRONICS INC b 2 E ]> • ^ 5 7 5 2 3 oo3fiotfl T 5 b HINECE DATA SHEET NEC PHOTO DIODE N D L 5 1 0 0 ELECTRON DEVíCE 1 300 nm OPTICAL FIBER COMM UNICATIONS 4> 100 //m GERMANIUM AVALANCHE PHOTO DIODE DESCRIPTION NDL5100 is a Germanium Avalanche Photo diode especially designed for a detector of long wavelength fiber transmission

NDL5200

Abstract: 2c ti apd LD236
Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5171P, NDL5171P1, NDL5171P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 100 ¡im GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P, NDL5171P1 and NDL5171P2 are G erm anium avalanche photo diode m odules w ith m ultim ode fiber.

Contextual Info: B K C INTERNATIONAL 3QE D • HTTTflB G00G32fci 4 ■ ' “T - O i - O “] BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO* 508 681-0392 ENGINEERING DATA SHEET TYPE 1N100A GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS

diode piv 100 500ma

Abstract: G1594 gold bonded germanium diode
Contextual Info: B K C INTERNATIONAL 30É D • llTTTfiB DQDDBS1 S ■ '~pO\-§-} BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 BKC ENGINEERING DATA SHEET FOR TYPE NUMBER G 1594 GOLD BONDED GERMANIUM DIODE ABSOLUTE MAXIMUM RATINGS

NDL5131P1

Abstract: si9125 Ge APD
Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE MODULE NDL5131P, NDL5131P1, NDL5131P2 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 30 /im GERMANIUM AVALANCHE PHOTO DIODE MODULE WITH SMF DESCRIPTION NDL5131P, NDL5131P1 and NDL5131P2 are G e rm a n iu m a valanche p h o to d io d e m o d u le s w ith s in g le m o d e fib e r.

Contextual Info: B K C INTERNATIONAL 30É ]> M 117^03 0 0 00 3 3 0 0 • i'p O 1 ~ 0 7 BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01841 TEL NO. 508 681-0392 ENGINEERING DATA SHEET for 1N3287 GOLD BONDED, GERMANIUM, DIODE ABSOLUTE MAXIMUM RATINGS PEAK REVERSE VOLTAGE

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

diode germanium 1n270

Abstract: 1N270 1N270 diode diode germanium 1n283 diodes 1n270 Germanium Diode 1n270 diode 1N270 1N270 diode germanium 1N277 gold bonded germanium diode 1N270
Contextual Info: Data Sheet 1N270 1N277 1N281 Central' 1N283 GERMANIUM DIODE Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC D0-7 CASE Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR INIOOA, 1N270, 1N277, 1N281, 1N283 t y p e s a r e G old Bonded Germaniun

D3E diode

Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
Contextual Info: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

to3a

Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
Contextual Info: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A

Germanium Schottky diode

Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
Contextual Info: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for

NSL5027

Abstract: transistor LM340 LM340 voltage regulator LM340 AN-103 national 12V 10A voltage regulators NPN Transistor 10A 24V LM320 voltage regulator Lm324 comparator datasheet dual tracking voltage regulator ic 10A
Contextual Info: Introduction The LM340-XX are three terminal 1.0A positive voltage regulators, with preset output voltages of 5.0V or 15V. The LM340 regulators are complete 3-terminal regulators requiring no external components for normal operation. However, by adding a few parts, one may improve the transient response, provide for a variable output voltage, or increase the

BA163

Abstract: dk qs BA 30 C Diode BA 163 BA244 QS700
Contextual Info: Silicon Capacitance Diodes Germanium Diodes Silicon Epitaxial Planar C apacitance Diode in DO-7 glass package w itn w ide e ffective capacitance variation fo r tun ing over the total fre­ quency range in short-wave, medium-wave, and long-w ave circu its Type

IC 7413

Abstract: NSL5027 equivalent Z340 LM340-XX LM324 DIL TTL 74137 transistor LM320K-15 transistor 7413 NSL5027 Germanium power diode
Contextual Info: LM340 Series Three Terminal Positive Regulators National Semiconductor Application Note 103 George Cleveland August 1980 LM340 Series Three Terminal Positive Regulators INTRODUCTION The LM340-XX are three terminal 1 0A positive voltage regulators with preset output voltages of 5 0V or 15V The

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

transistor c111

Abstract: C111 transistor
Contextual Info: 11.3 Gbps Optical Receiver ADN3010-11 Data Sheet FUNCTIONAL BLOCK DIAGRAM FEATURES VCC VCC ADN3010-11 50Ω 50Ω OUT+ OUT– POWER MONITOR GND PM 11858-001 Integrated SiGe PIN photodiode, transimpedance amplifier TIA , and limiting amplifier (LA) Power monitor output: 1.0 A/W at O band wavelengths

Conventions used in Presenting Technical Data

Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
Contextual Info: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.