MBD3057 Search Results

Contextual Info: MBD3057T54 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 400u Peak Curr. Tol. Total Cap. (F)600f Ip/Iv Min2.5 Vp Vv Fwd Volt @Ipeak110m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)12 Neg Resist. Semiconductor MaterialGermanium

back Tunnel diode

Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

MBD3057-C18

Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Contextual Info: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

MBD5057

Contextual Info: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized

TUNNEL DIODE

Abstract: mbd1057 MBD3057 MBD2057 MBD-1057 Characteristics curve of diode TUNNEL DIODE spice model "tunnel diode" diode tunnel tunnel
Contextual Info: 1 Spice Model for Metelics Tunnel Diode Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. Anode 1 C1 G1 Cathode (2) G1 models the reverse and forward bias IV curve. The model does not accurately represent the negative

Tunnel diode

Abstract: MBD1057 DATASHEET TUNNEL DIODE "tunnel diode" MBD3057 TUNNEL DIODE spice model Characteristics curve of diode MBD2057 switch diode tunnel MBD-1057
Contextual Info: Spice Model for Metelics Tunnel Diode 1 Spice does not contain a model for the Tunnel Diode. To correct this omission, use the macromodel shown below. E1, R1, D2 and G1 model the reverse bias curve and the forward bias curve through the valley. D1 models the forward bias curve beyond the valley. The model does not accurately represent the negative differential

MBD3057-C18

Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Contextual Info: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability

MSPD2018

Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Contextual Info: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for

MBD2057-C18

Contextual Info: FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M A X IM U M RATINGS Storage Tem perature. -6 5 to +125°C Operating T e m p e ra tu re . -6 5 to +110°C

MBD3057-C18

Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Contextual Info: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS

MBD3057-C18

Abstract: back Tunnel diode
Contextual Info: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d