GEOMETRY 2N4391 Search Results

U1897E

Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A

2N3824

Abstract: 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
Contextual Info: LOW P O W E R FIELD EFFE C T T R A N S IS T O R S IF if: Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min Max (V) _ Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) T(on) Max (nS) T(off)

Contextual Info: L O W P O W E R F IE L D EFFEC T T R A N S IS T O R S W0¥ G»©s Type Number Case Style T O - Geometry •BVDgo or BVgss Min (V) Ciss Max (PF) Crss Max (PF) Vgs (off) Min Max (V) Idss Max Min (mA) Igss or •Idgo Max (nA) R(on) Max (ohms) 0.10 1.00 • .25

j201 jfet

Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

J201 Replacement

Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

2N4360

Abstract: 2N3459 J411 fet Solitron 2N3821 U1898E 2N5906 TIS58 MEM511 2N3920 uc451
Contextual Info: //nlitrnn_ iFia@BOJ Tr ©A'um© mm M O R D E R IN G IN F O R M A T IO N Devices. Inc. l® FOtHL® ItM FO K gir The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego’s standard for Q . A. production, marketing and sales.

Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • DS0433Ô 000b5E3 S31 ■ AL6R JUNCTION FIELD-EFFECT TRANSISTORS • ELECTRICAL CHARACTERISTICS at TA= + 25°C A V 1 G S o ff V Y (B R )G S S Allegro Min. @ IG Max. @ V GS Min. Max. Type Type Polarity (V) (HA) (nA) 2N4391

Siliconix J310

Abstract: GASFET 2N4339 Spice J111 spice model Siliconix AN104 Siliconix JFET U310 spice model jfet spice model J176 SST310
Contextual Info: AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction

J111 spice model

Abstract: Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET Siliconix J310 PSpice application note jfet J111 transistor 2N4416 Siliconix
Contextual Info: AN104 SPICE Parameters for Select JFETs The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET. Introduction

HC-49/pspice model

Abstract: J111 spice model U310 spice model jfet spice model GASFET 2n4416 SST310 spice model J176 2n4391 spice U310
Contextual Info: AN104 SPICE Parameters for Select JFETs Ed Oxner The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.

an104 siliconix

Abstract: TO-226A U421 jfet Siliconix AN104 jfet spice model SST310 spice model SILICONIX 2N4391 2N4391 J111 J176
Contextual Info: AN104 Siliconix SPICE Parameters for Select JFETs Ed Oxner Introduction The following table of parameters will input directly into the PSPICE1 circuit file. To users familiar with PSPICE, where CDS or ALPHA is offered, the MODEL statement is the GASFET; otherwise it is the JFET.

kk3819

Abstract: kk4223
Contextual Info: T -3 5 -2 5 ' sod Ô3bflbü2 DÜDBbflD S4T 4ÖE D SOLITRON DEVICES INC A T M , © L O W P O W E R FIELD E F F E C T T R A N S I S T O R S m m /M L •BVDgo o: BVgss Case Min Type Style Numbei T O - I Geometi ? (V 18 FN22.2 50 2N3066 2N3067 18 FN22.2

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

ATML U 106

Abstract: ATML 350 UC758 2N5902 TO-92 2N5045 J2N5670 2N3966 ATML U ATML U 010 2N3070
Contextual Info: flnlitran_ [F>[a iB y)©'ir ©Mm.©© Devices. Inc. L O W P O W E R FIE L D E F F E C T T R A N S I S T O R S (ÜHNIIIIMIL Type Num ber •BVDgo or BVgss C ase Min Style ( T O - ) G eom etry (V) Ciss Max (pF) Crss Max (pF) Vgs (off) Min

TIS88A equivalent

Abstract: 2N3456 equivalent J411 fet 2n5952 equivalent 2n3820 equivalent 2N5248 equivalent fet 2N4304 2n5245 equivalent 2N4304 equivalent 2N5454 equivalent
Contextual Info: a t t m ,© O R D E R IN G IN F O R M A T IO N Devices, Inc T O / » © 0© T Q K © K lO tP i M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N JEDEC prefixes. This product code index is Solitron San Diego's standard for Q. A. production, marketing and sales.

2N4393

Abstract: 2N4393 DIE CHIP cp206 GEOMETRY 2N4391 2N4391 ADAM transistor 2n4391 2N4392 CMPF4391 CMPF4392
Contextual Info: CP206 PROCESS Central Small Signal Transistors TM Semiconductor Corp. N - Channel Switch/Chopper J FET Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21 x 18 MILS Die Thickness 8.0 MILS Drain Bonding Pad Area 3.8 X 3.8 MILS Source Bonding Pad Area

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

JFET

Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

2n4392 SPECIFICATION

Abstract: SST4856 BSR58 equivalent SST4092 VCR2N equivalent SST4857 2N4858 equivalent SST4860 2N4856 SILICONIX SST4858
Contextual Info: Siliconix incorporated HIGH GAIN JFET AMPLIFIERS Cont'd en 'DSS PART# V(BR)GSS (V) MIN MAX (mA) 'GSS (PA) 9fs 9 os (mS) (nS) C| SS (PF) C rs s (PF) 7 12 12 12 13 13 13 12 12 12 3 3.5 3.5 3.5 3.5 3.8 4 3.5 3.5 3.5 4 3 3 3 3 3 3 3 3 3 1 1 1 4 4 4 3.5 3.5 3.5

2N3907

Abstract: LH0032 am9710 LH0032CG h12a transistor 2N3907 H12A TO8-12 LH00326 LH0032C LH0032G
Contextual Info: Ultra Fast FET-Input Operational Amplifier CORPORATION LH0032 / LH0032C FEATURES GENERAL DESCRIPTION • 500V/µs Slew Rate Bandwidth • 70MHz 12 Ω Input Impedance • 10 • As Low as 2mV Max Input Offset Voltage • FET Input Null with Single Pot • Offset

2N3907

Abstract: LH0032
Contextual Info: Ultra Fast FET-Input Operational Amplifier LLC LH0032 / LH0032C FEATURES GENERAL DESCRIPTION • 500V/µs Slew Rate Bandwidth • 70MHz 12 Ω Input Impedance • 10 • As Low as 2mV Max Input Offset Voltage • FET Input Null with Single Pot • Offset • No Compensation for Gains Above 50

LH0032

Abstract: LH0032CG Calogic am9710 2N3907 h12a LH0032C LH0032G LM113 H12A TO8-12
Contextual Info: Ultra Fast FET-Input Operational Amplifier LLC LH0032 / LH0032C FEATURES GENERAL DESCRIPTION • 500V/µs Slew Rate Bandwidth • 70MHz 12 Ω Input Impedance • 10 • As Low as 2mV Max Input Offset Voltage • FET Input Null with Single Pot • Offset • No Compensation for Gains Above 50