GENERATION Search Results

Contextual Info: TIBPAL22V10-20M HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPSQ12A - D3523, JUNE 1 9 9 0 -R E V IS E D MARCH 1992 JT P A C K A G E Second-Generation PLD Architecture TO P V IE W High-Performance Operation: fmax (External Feedback). . . 33.3 MHz

A9RV

Abstract: 5s a315 A327
Contextual Info: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

d3905

Contextual Info: TL7759C SUPPLY VOLTAGE SUPERVISOR D3905. JANUARY 1991-REVISED SEPTEMBER 1991 D OR P PACKAGE TOP VIEW * Power-On Reset Generator * Automatic Reset Generation After Voltage Drop * Precision Threshold Voltage 4.55 V ±120 mV * Low Standby Current, . . 20 ^A

4A04I

Abstract: tc514100a
Contextual Info: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

GT50J102

Contextual Info: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.

TC160G

Abstract: toshiba LGA Nand TC170C14 TC26SC TC170C1 TC170C29
Contextual Info: TOSHIBA TC170C CMOS Standard Cell 0.7\xm , 5.0V ASICs The 0.7nm, 5V TC170C allows higher area efficiency, system performance and device integration with lower power than previous generation 5V standard cell products Benefits • Advanced 0.7 micron CMOS process with fast 250ps gate

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

TIBPSG507AC

Contextual Info: TIBPSG507AC 13 x 80 x 8 PROGRAMMABLE SEQUENCE GENERATOR I SRPS002D - D3029. MAY 1 9 8 7 -R E V IS E D NO VEM BER 1995 • JT O R 58-MHz Max Clock Rate N T P A C K A G E T O P V IE W • | • • • • Ideal for Waveform Generation and High-Performance State Machine

Contextual Info: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.

Contextual Info: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.

gt50j

Contextual Info: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2

Contextual Info: TO SH IBA TENTATIVE GT15Q311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.40/^s Max. Low Saturation Voltage : VCE (sat)^ 3 .5 V (Max.)

DN-36

Abstract: MA 5036 NS
Contextual Info: | i j i _ DN-36 U IM IT R O D E Design Note UC1525B/UC1527B DEVICES Comparison Summary to UC1525A/27A Devices The UC1525B and UC1527B devices are enhanced versions of the previous generation of UC1525A and UC1527A devices. They are pin-for-pin compatible and direct replacements for the “A”

transistor et 455

Contextual Info: TL7702A, TL7705A, TL7709A, TL7712A, TL7715A TL7702AY, TL7705AY, TL7709AY, TL7712AY, TL7715AY SUPPLY VOLTAGE SUPERVISORS SLVS028C - APRIL 1983 - REVISED AUGUST 1995 • Power-On Reset Generator • Automatic Reset Generation After Voltage Drop D, JG, OR P PACKAGE

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

Contextual Info: UCC5680 y UNITRODE ADVANCE INFORMATION Low Voltage Differential LVD SCSI 9 Line Terminator FEATURES DESCRIPTION • Low Voltage Differential Termination The UCC5680 Low Voltage Differential Terminator is a low voltage differ­ ential terminator for the next generation SCSI Parallel Interface (SPI-3).

Contextual Info: T E N T A T IV E D A T A 1,048,576 W O R D x 1 BIT D Y N A M I C R A M D E SC R IP T IO N T h e T C 511002A P /A J/A Z is the new generation dynam ic RAM organized 1,048,576 words by 1 bit. T h e T C 511002A P /A J/A Z u tilizes TO SH IBA’S CMOS Silicon gate process technology as w ell as advanced

Contextual Info: CDC351 1-LINE TO 10-LINE CLOCK DRIVER WITH 3-STATE OUTPUTS SC AS339-FEBRU ARY 1994-R E V IS E D MARCH 1994 DB OR DW PACKAGE TOP VIEW Low Output Skew, Low Pulse Skew for Clock-Distributlon and Clock-Generation Applications Operates at 3.3 Vcc LVTTL-Compatlble Inputs and Outputs

GT60M303

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.

TC514258

Abstract: 4256AP 58ab AZ-70
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as

A100COLUMN

Contextual Info: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as