GENERAL SEMICONDUCTOR SM Search Results

Contextual Info: The Leader in High Temperature Semiconductor Solutions CHT-OPA DATASHEET Revision: 02.1 Nov. 10, 2010 High-Temperature General-Purpose Quad Operational Amplifier General Description Features The CHT-OPA is a general-purpose quad operational amplifier for applications over

Contextual Info: SMZJ3788B thru SMZJ3809B www.vishay.com Vishay General Semiconductor Surface Mount Power Voltage-Regulating Diodes FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low Zener impedance • Low regulation factor

BFM LF

Abstract: SMCJ12A vishay vishay smcj GENERAL SEMICONDUCTOR MARKING bfm SMCJ5.0A
Contextual Info: SMCJ5.0A thru SMCJ188CA www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

smbj24a LZ

Abstract: SMBJ15A SMBJ60 KE SMBJ SMBJ24A E3 SMBJ5.0A SMBJ130A SMBJ170A SMBJ17A SMBJ100A
Contextual Info: SMBJ5.0A thru SMBJ188A www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • • • • • DO-214AA SMB J-Bend • • • • Low profile package Ideal for automated placement Glass passivated chip junction

vishay ck7

Contextual Info: SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 600 W peak pulse power capability with a 10/1000 µs waveform

GFK7

Abstract: BFM7 gfm7 GHR8
Contextual Info: SM15T Series Vishay General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • 1500 W peak pulse power capability with a 10/1000 µs waveform

TPSMC

Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Available in uni-directional polarity only *

Contextual Info: B330LA, B340A www.vishay.com Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

LLC resonant converter 1kw

Abstract: EEPROM ATMEL 24C64 lmx9830 SLF60A atmel 028 24C64 24C64 AN uart 1650 lmx98
Contextual Info: LMX9830 LMX9830 Bluetooth Serial Port Module Literature Number: SNOSAU0A LMX9830 Bluetooth Serial Port Module 1.0 General Description 3.0 Other Features The National Semiconductor LMX9830 Bluetooth Serial Port module is a highly integrated Bluetooth 2.0 baseband controller and 2.4 GHz radio, combined to form a complete small

Contextual Info: SM 73301 SM73301 RRIO, High Output Current & Unlimited Cap Load Op Amp in SOT23-5 T ex a s In s t r u m e n t s Literature Number: SNOSB92A SM73301 Semiconductor RRIO, High Output Current & Unlimited Cap Load Op Amp in SOT23-5 General Description Features

Contextual Info: B350B, B360B www.vishay.com Vishay General Semiconductor Surface Mount Schottky Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop

Contextual Info: MURS320 www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • High forward surge capability

B180

Contextual Info: PL IA N T Features CO M • RoHS compliant* *R oH S ■ SMA package ■ Surface mount ■ Very low forward voltage drop CD214A-B120 ~B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

Contextual Info: LMV225,LMV228 Application Note 1817 LMV225/LMV228 LLP Evaluation Board Literature Number: SNWA010A National Semiconductor Application Note 1817 Gerrit de Wagt March 26, 2008 General Description INPUT The LMV225 has an RF power detection range from −30 dBm

transistor smd marking cfr

Contextual Info: The Leader in High Temperature Semiconductor Solutions Version: 2.2 CHT-VEGA-DATASHEET High-Temperature, Low Dropout, Adjustable Voltage Regulator +1.2V to +3.3V / 500mA General description Features The CHT-VEGA is a high-temperature, high-reliability, 500mA adjustable linear

Contextual Info: LM H 0002 LMH0002 SMPTE 292M /2 5 9 M Serial Digital Cable Driver T ex a s In s t r u m e n t s Literature Number: SNLS215D Semiconductor LMH0002 SMPTE 292M / 259M Serial Digital Cable Driver General Description Features The LMH0002 SMPTE 292M / 259M serial digital cable driver

Contextual Info: LMP2232 LMP2232 Dual Micropower, 1.6V, Precision, Operational Amplifier with CMOS Input Texas In s t r u m e n t s Literature Number: SNOSBQ2B Semiconductor LMP2232 Dual Micro power, 1.6V, Precision, Operational Amplifier with CMOS Input General Description

Contextual Info: New Product DFL15005S thru DFL1510S Vishay General Semiconductor Low Profile Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifiers FEATURES • Low profile: typical height of 2.5 mm - • UL recognition, file number E54214 • Ideal for automated placement

BT 217

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS07-13502-5E 16-bit Proprietary Microcontroller CMOS F2MC-16F MB90220 Series MB90223/224/P224A/W224A MB90P224B/W224B/V220 • OUTLINE The MB90220 series of general-purpose high-performance 16-bit microcontrollers has been developed primarily

1N5825

Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
Contextual Info: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc

New England Semiconductor

Abstract: transistor D 1666 2N3250
Contextual Info: 0 /V E F ^ IP 2N3250 NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL PNP TRANSISTORS • HIGH VOLTAGE • HIGH FREQUENCY • HIGH CURRENT GAIN PNP GENERAL PURPOSE TRANSISTOR 1 E m itter TO-18 M A X IM U M R A T IN G S RATINGS SYMBOL 2N3250 UNITS VcEO -40 V dc

Contextual Info: DP83640 DP83640 Precision PHYTER - IEEE/E1588 Precision Time Protocol Transceiver T ex a s In s t r u m e n t s Literature Number: SNOSAY8D t Semiconductor DP83640 Precision PHYTER - IEEED1588 Precision Time Protocol Transceiver 1.0 General Description 3.0 Features

Contextual Info: LMV851 ,LMV852,LMV854 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers T exa s ÌNSTRUM ENTS Literature Number: SNOSAW1 £/r Semiconductor LMV851/LM V852/LM V854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers General Description

Contextual Info: FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features General Description • 5.5 A, 30 V. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance