GBFL Search Results

HVS10000

Abstract: HVS20000 HVS15000 HVS25000 HVS30000 HVS5000 HVS12500 HVS2500 HVS7500
Contextual Info: B?Gbfl4b OOPGlbl SERIES HVS bib |u T \^ I -T % iW - 2,500 to 30,000 Volts 3 Amps. Standard Recovery DIMENSIONS See table L' x 0.75‘ W X 0.40" H Leads: 2.0‘ long, 0,050" dia. Axial Lead • Flat Pack • Glass Passivated High Voltage Rectifier Assemblies

1D11013

Abstract: 1dz 2 0084004 74ALVC16373 f 1le bb53T2 74ALVC15373DL
Contextual Info: NAPC/PHILIPS SEniCOND b3E ]> • bbS3ciE4 DGÖHDßG Gbfl * S I C 3 Philips Semiconductors Objective Specification Dual octal D-type transparent latch; 3-state FEATURES • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC

Contextual Info: 2?Gbfl4b Ü Ü 0 D 1 7 4 TÔ3 5 to 20 KV 2 Amps. 75 ns. Recovery SERIES HVFWBUF 0.032 x 0 250 FIGURE 1 Tab Terminals Typ FIGURE 2 0 032 x 0 250 Tab Termtrvais Typ OKahM fcr# ' INCHCS “ ofi 2 -" * r * HVCA All dimensions in inches. »-=• "!3 4 / 5 t* g

Contextual Info: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

2SB1171A

Abstract: 001582 IC vertical panasonic 2SB1171 2SD1718 hlkl
Contextual Info: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 718 U n it - mm 3.7m ax 7.3m ax. • Features 3.2m ax. 0 .9 ± 0 .1

Contextual Info: 3Ü GEC P L E S S E Y au g u st 19 9 5 S E M I C O N D U C T O R S DS4171-3.3 DS2102SY RECTIFIER DIODE KEY PARAMETERS VRRM 2000V >p a v , 5460A APPLICATIONS • Rectification. ■ Freewheel Diode. lFSM 100000A ■ DC Motor Control. ■ Power Supplies. ■ Welding.

Contextual Info: S G S -T H O M S O N I M g [ 3 I ! L i© r a R ie S L 9 8 2 2 E OCTAL SERIAL SOLENOID DRIVER ADVANCE DATA . EIGHT LOW R dsoo DMOS OUTPUTS (0.5Q AT lo = 1A @ 25°C Vcc = 5V± 5% • 8 BIT SERIAL INPUT DATA (SPI) . 8 BIT SERIAL DIAGNOSTIC OUTPUT FOR

Contextual Info: PRELIMINARY KS0789 CMOS DIGITAL INTEGRATED CIRCUIT Introduction 100 channel Common driver for LCD DOT MATRIX, KS0789 is a LCD driver LSI which Is fabricated by low power CMOS high voltage process technology. This device consists o f tw o 50 bit Bidirection shift registers

Contextual Info: SAMSUNG ELECTRONICS INC b7E D 7 ^4 1 4 2 0 G1 S Ö 73 ‘t ë ô CMOS DRAM KM416C256A/AL/ALL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAc tRC 60ns 15ns 110ns KM416C256A/AÜALL-7 70ns 20ns 130ns

10 pin frc

Abstract: A108 LB1981V 100M23
Contextual Info: Ordering number : ENN5917 Monolithic Digital IC LB 1981V jS A itfO j Three-Phase Brushless Motor Driver Overview Package Dimensions The LB 198IV is a three-phase brushless motor driver especially suited for use mainly with drum motors of portable VCRs. unit: mm

transistor 3l2

Abstract: 3L2 TO252 L76M05 SC07770 L78M00AB L78M00AC L78M05ABDT L78M05ABV L78M05ACDT L78M06ACDT
Contextual Info: SCS-THOMSON MœSiLIOÏÏIFSMDiBS L78M00AB/AC SERIES PRECISION 500mA REGULATORS i OUTPUT CURRENT UP TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9:10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTORS SOA PROTECTION

M51131L

Abstract: zig bee M5113 AUDIO volume CONTROL IC
Contextual Info: M ITSUBISHI LINEAR ICs * b24*Jü2ti Ü G l í C n s MITSUBISHI ELEK T70 • H I T 2 M51131L L IN E A R CHANNEL ELECTRONIC VOLUME BALANCE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 51131L is a sem icon ductor in te gra te d circu it d e ­ sig ne d for du al-chan ne l e le ctro n ic volum e balance control.

MU-206S

Abstract: HD6461OFP HM62256 HD64610 Hitachi Hd64610
Contextual Info: L.1E T> m 44Tb204 0G3flb30 b24 •HIT3 H D 6 4 6 1 0 - HITACHI/ nCU/MPU C alendar C lo ck 1C Description v ss d 1 24 Z I H-START/STOP d 2 23 Z I ose ose The H D 64610 is a calendar clock IC providing calendar clock functions and an 8-bit static-RAM

brooktree 360

Abstract: Bt858
Contextual Info: C ir c u it D e s c r ip t io n Pin Descriptions Pin Name Description The first three pins described are defined and named depending upon the timing mode chosen for use. In timing modes 0,1 and 3, the pins F/BLANK*, H/HSYNC* and V/VSYNC* refer to BLANK*, HSYNC* and VSYNC*. In timing mode 2 they refer to F field , H (horizontal blank),

HY51V18164B

Contextual Info: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques

gi 9644 diode

Abstract: INTELDX4 write-through
Contextual Info: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit

B1171

Abstract: 2SB1171 2SB1171A 2SD1718 IC vertical panasonic ELSA gbfl
Contextual Info: Power Transistors 2SB1171, 2SB1171A 2SB1171, 2SB1171A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Am plifier T V Vertical Deflection Output C om plem entary Pair with 2 S D 1 7 1 8 U n it • 3.7max, 7.3m ax. ■ Features 0.9 ± 0.1 0 .5 m ax .-

International Rectifier 16f series

Contextual Info: Bulletin 120204 International S Rectifier 16F R s e r ie s STANDARD RECOVERY DIODES Stud Version Features • 16 A High surge current capability ■ Avalanche types available ■ Stud cathode and stud anode version ■ Wide current range ■ Types up to 1200V VRRM

LN427

Abstract: laf 0001 power 9410b ic laf 0001 10BASE2 10BASE5 CRD8900-1 CS8900 CS8900-CQ testing motherboards using multi meter
Contextual Info: CS8900 A Cirrus Logic Company Highly-Integrated ISA Ethernet Controller Features Description • The CS8900 is a low-cost Ethernet LAN Controller op­ timized for Industry Standard Architecture ISA Per­ sonal Computers. Its highly-integrated design elimi­

KMM366S404AT

Abstract: circuit diagram for auto on off
Contextual Info: KMM366S404AT NEW JEDEC SDRAM MODULE KMM366S404AT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S404AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

HN62344BP

Abstract: HN62344
Contextual Info: blE D • 44^203 HN62344B Series 0D22323 412 ■ H I T 2 — - HITACHI/ LOG IC/ARRAYS/MEM 524288-word x 8-bit CMOS Mask Programmable Read Only Memory T he H N 62344B is a 4 -M b it CM OS m askprogrammable ROM organized as 524288 words by 8 bits. Realizing low power consumption, this

Contextual Info: MP7524A CMOS Buffered Multiplying 8-Bit Digital-to-Analog Converter w FEATURES APPLICATIONS • • • • • • • • • • • • • *o u t Pin Voltages are User Definable Improved Isolation of Analog from Digital Ground Full Four-Quadrant Multiplication

cd 4004

Contextual Info: P R E C I S I O N _ T H I N _ F I L M _ T E C H N O L O G Y SURFACE MOUNT NETWORKS Molded, SOT-23 Resistor Network MPM Series Divider F eatures Stocked Standard Footprint T y p ic a l P e r f o r m a n c e • TCR A c tu a l Siz

Contextual Info: r Z J S G S -T H O M S O N M28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns