GAAS-FET BIAS Search Results

GAAS-FET BIAS Result Highlights (5)

Part	Manufacturer	Description
LM7705MM/NOPB	Texas Instruments	Low Noise Negative Bias Generator 8-VSSOP -40 to 125
LM7705MME/NOPB	Texas Instruments	Low Noise Negative Bias Generator 8-VSSOP -40 to 125
LM7705MMX/NOPB	Texas Instruments	Low Noise Negative Bias Generator 8-VSSOP -40 to 125
LM36273YFFR	Texas Instruments	Three-Channel LCD Backlight and Bias Power 24-DSBGA -40 to 85
LM36274YFFR	Texas Instruments	Integrated Backlight Driver With LCD Bias 24-DSBGA -40 to 85

GAAS-FET BIAS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power	OCR Scan	MGFC2407A MGFC2400	PDF
M 1661 S Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power	OCR Scan	MGFC2415A MGFC2400 150mA M 1661 S	PDF
Curtice Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice Contextual Info: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the	Original	AN1023 sam13-106. Curtice fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice	PDF
MGFS45V2527 Abstract: f1270 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2527 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7	Original	MGFS45V2527 MGFS45V2527 -45dBc f1270	PDF
mitsubishi f Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed	OCR Scan	MGFC36V7785A MGFC36V7785A --51D 45dBc Item-01 Item-51 mitsubishi f	PDF
MGFS45V2123 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3	Original	MGFS45V2123 MGFS45V2123 -45dBc	PDF
MGFS45V2325 Abstract: 2.4 GHZ 30W AMPLIFIER CIRCUIT Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5	Original	MGFS45V2325 MGFS45V2325 -45dBc 2.4 GHZ 30W AMPLIFIER CIRCUIT	PDF
F A 505 Abstract: MGFC45V5053A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25	Original	MGFC45V5053A 25GHz MGFC45V5053A 25GHz -45dBc 160mA Item-51 F A 505	PDF
GSO 69 Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)	OCR Scan	MGFC36V6472A MGFC36V6472A 45dBc Item-01 Item-51 GSO 69	PDF
fet data book free download Abstract: MGFC45V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5964A 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4	Original	MGFC45V5964A MGFC45V5964A -42dBc 160mA Item-51 10MHz fet data book free download	PDF
12api Abstract: 251C MGFC36V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The hermetically	OCR Scan	FC36V5964A MGFC36V5964A 45dBc ltem-01 10MHz" 12api 251C	PDF
4433 fet Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3	Original	MGFC42V3436 MGFC42V3436 4433 fet F4535 high power FET transistor s-parameters VDS-10	PDF
dssc Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET> MGFC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically	OCR Scan	MGFC36V7177A MGFC36V7177A 45dBc Item-01 10MHz dssc	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1-2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance m atched GaAs power FET especially designed for use in 2.1 ~2.3	OCR Scan	MGFS45V2123 MGFS45V2123	PDF

MGFC39V5964A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V5964A MGFC39V5964A 28dBm 10MHz June/2004	PDF
MGFC39V3436 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V3436 MGFC39V3436 28dBm Oct-03	PDF
MGFS45V2123A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2123A MGFS45V2123A 079MIN. 25deg	PDF
MGFC42V7785A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004	PDF
MGFC36V4450A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V4450A MGFC36V4450A 25dBm 10MHz	PDF
MGFC39V3742A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3742A 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC39V3742A MGFC39V3742A 28dBm 10MHz	PDF
MGFC36V4450A Abstract: MGFC36V4450 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC36V4450A MGFC36V4450A 25dBm 10MHz June/2004 MGFC36V4450	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2123A MGFS45V2123A -45dBc 079MIN. 25deg	PDF
MGFS45V2325A Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2325A 2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 - 2.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFS45V2325A MGFS45V2325A 079MIN. -45dBc 25deg	PDF
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3742 3.7 ~ 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	MGFC42V3742 MGFC42V3742 31dBm 10MHz June/2004	PDF

GAAS-FET BIAS Search Results

GAAS-FET BIAS Result Highlights (5)

GAAS-FET BIAS Datasheets Context Search

M 1661 S

Curtice

MGFS45V2527

mitsubishi f

MGFS45V2123

MGFS45V2325

F A 505

GSO 69

fet data book free download

12api

4433 fet

dssc

MGFC39V5964A

MGFC39V3436

MGFS45V2123A

MGFC42V7785A

MGFC36V4450A

MGFC39V3742A

MGFC36V4450A

MGFS45V2325A