GAAS FET CROSS REFERENCE Search Results

HMF06300

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates

Contextual Info: SAMSUNG ELECTRONICS INC 2 j HARRIS PRODUCT DATA bOE D • 7^^4142 OGllflEb 442 ■ SMGK HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

Contextual Info: SAMSUNG ELECTRONICS INC J*j HARRIS LOE D • 7 ^ 4 1 4 2 GGllflMb E3G ■ SHGK HMF-24000 100 -,200 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

HMF-03100

Abstract: HMF03100 HMF-03100-100 HMF-03100-300 samsung 943
Contextual Info: SAMSUNG ELECTRONICS INC 2j HARRIS bDE ]> • TTbMlMS 0D11Ö22 ÖT7 ■ SM6K H M F -03100 -1 0 0 -200 -3 0 0 Gain Optimized GaAs FET 2-2 0 GHz PRODUCT DATA Features • +15, +19 and +21 dBm Output Power Selections Available Large Cross Section Ti/Pt/Au Gates

"Harris microwave"

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS bDE D 7 ^ 4 1 4 2 Güllfin E DE HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

LDS 4201

Contextual Info: HARRI S 4bE MU SEMICONDUCTOR D • 43052^ D0D0177 ‘ì ■ T ^ - 2 > \ - 3 lS ~ HARRIS HM F-12 1 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz * Large Cross Section Ti/Pt/Au Gates

50LD

Abstract: sn 1699
Contextual Info: SAHSUNG ELECTRONICS INC [Jj HARRIS bOE D • ? 1 b m M 2 0011SM3 SSI H M F -12100 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

a dbm hmf no

Contextual Info: HARRIS Mül SEMICONDUCTOR r r HARRIS 4hE D 1 • HMS H3DSEbT D 0 0 01 7 3 HMF-12000 -100 -200 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200) with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

HMF06100

Abstract: "Harris microwave"
Contextual Info: SAMSUNG ELECTRONICS bGE INC £0 HARRIS H 7 % 4 1 4 2 0011833 bfl2 D M F - 6 1 -1 0 0 -2 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for S/X Band and Ku Band Applications Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

HMF-03000

Contextual Info: HARRIS Mil SEMICONDUCTOR 23 HARRIS 4bE » • 4 3 Q E 2 t . cl O Q Q Q l ^ 4 ■ T -3 1 -3 5 HMF-03000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features • +21.5 dBm Output Power with 8.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

HMF-03300

Abstract: HMF0330 GAAS FET CROSS REFERENCE
Contextual Info: HARRIS MU S E M I C O N D U C T O R HARRIS PRODUCT DATA MbE D • 430221^ GGG0157 3 ■ HMS HMF-03300 Gain Optimized Low Current GaAs FET 2-20 GHz Features • Low Current Design Provides High ‘dB/mA’ Performance * Large Cross Section Ti/Pt/Au Gates

Contextual Info: HARRIS Mill SEMICONDUCTOR MbE D • 1302Sfa1 0 0 0 0 1 5 3 " T 2 j HARRIS - 3 t | - 3 S H M F -03100 -1 0 0 -200 -3 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * +15, +19 and +21 dBm Output Power Selections Available * Large Cross Section Ti/Pt/Au Gates

Contextual Info: SAMSUNG E LE C TR O N IC S IN C bGE ]> • 7Sbm 4E D G llfiM D HABRI8 HMF-12000 Û1E -1 0 0 -20 0 Power Optimized GaAs FET 2-16 GHz PRODUCT DATA Features • +27.5 dBm Output Power -200 with 7.5 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates

HMF-0600

Abstract: HMF-06000
Contextual Info: S A M S U N G E L E C T R O N I C S INC 33 HARRIS bDE J> 7^4142 0G11Ô3D T73 HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability

HMF-06100

Abstract: HMF06100
Contextual Info: HARRIS Mill S E M I C O N D U C T O R 4bE D • 43022^ OGGOlbS 2 ■ HMS -1 0 0 2 J H A R R I S H M F - 6 1 -200 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • Two RF Performance Selections for SIX Band and Ku Band Applications * Large Cross Section Ti/Pt/Au Gates

HMF-24000-200

Contextual Info: HARRIS ¿ 2 flu S E M I C O N D U C T O R H A R R I S 4bE » • 43022^ OOGQlfll □ « H M S H MF-2 4 0 0 G 100 -2 0 0 Power Optimized GaAs FET 2-14 GHz PRODUCT DATA Features • +30.5 dBm Output Power -200 with 5.5 dB Associated Gain at 8 GHz • Large Cross Section Ti/Pt/Au Gates

Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets

Contextual Info: Recent Progress in III-V Devices and Modules for Next Generation Mobile Handsets Mike Sun and Pete Zampardi Skyworks Solutions, Inc., 2427 Hillcrest Drive, Newbury Park, CA 91320 Over the past decade, III-V devices, and modules containing them, have dominated the market for RF front end

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

b1415

Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs

IC 4047

Abstract: GAAS FET rf switch CROSS REFERENCE 0.5 mm pitch mlp 16 pin ceramic attenuator MHz diode EGP 30 data sheet of IC 4047 Driver IC 4047 GAAS FET CROSS REFERENCE HP MMIC ic 4047 datasheet
Contextual Info: PRODUCT FEATURE RF DIGITAL ATTENUATORS IN PLASTIC MLP PACKAGES B Fig. 1 Relative sizes of the five-bit and six-bit attenuators. ▼ roadband digital attenuators have been used to set power levels in RF and microwave circuits for many years. The concept is to electronically switch resistive T

NE800296

Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

lcd cross reference

Abstract: capacitor cross reference ADC-7109 SP232CP digital thermometer using dmm and ic lm35 MC14433P processor cross reference SI7660CJ 7660 harris TC4422
Contextual Info: Selection Guide January 1998 Update , Plants and Offices Established in December of 1993, TelCom Semiconductor, Inc. is a worldwide manufacturer of semiconductor devices, with a dedicated wafer manufacturing facility in Mountain View, California and a testing plant in Hong Kong.

oki cross

Abstract: GAAS FET CROSS REFERENCE DC-10 GHAD4102 GHAD4103 GHAD4108 GHDD4411 GHDD4414 KGL4115F KGL4201
Contextual Info: DATA SHEET O K I G a A s P R O D U C T S GHAD4102/4103/4108 and KGL4115F 10-Gbps GaAs Optical Communications Family April 1999 • ■ –––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––