0011SM3 Search Results

50LD

Abstract: sn 1699
Contextual Info: SAHSUNG ELECTRONICS INC [Jj HARRIS bOE D • ? 1 b m M 2 0011SM3 SSI H M F -12100 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features * 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz • Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability