HMF06300 Search Results

Contextual Info: HARRIS nu S E M I C O N D U C T O R MbE D • 4 3 0 2 2 ^ ^ O D Q O l b ^ T ■ HMS " F g j H A R R IS PRODUCT DATA 5 \ '^ HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features • High Transconductance, especially for Feedback Amplifier Designs

Contextual Info: HARRI S Hü S E M I C O N D U C T O R HbE D • 4 3 G 2 2 b tì G 0 0 0 Z 1 7 b ■ T -3 1 -3 -S H M F-06310 g0 H A R R IS Gain Optimized Low Current GaAs FET 2-12 G H z PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids

HMF06300

Contextual Info: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates

F0631

Abstract: samsung 1019
Contextual Info: SAMSUNG ELECTRONICS INC HARRIS bOE Ï 7 ^ 4 1 4 2 0011074 ITS H M F -06310 Gain Optimized Low Current G aAs FET 2-12 GHz PRODUCT DATA Features * 10 dB MAG with +15.5 dBm Associated Power at 8 GHz and only 40 mA Ids Chip Devices are Selected from Standard Military Grade Wafers