G5 MARKING Search Results

DMA366A2

Contextual Info: DMA366A2 Tentative Total pages page DMA366A2 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : G5 Package Code : SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 °C

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMG5N dual digital transistors PNP+PNP SOT-363 FEATURES z Two DTA114Y chips in a package Marking: G5 1 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encapsulate Transistors UMG5N dual digital transistors PNP+PNP SOT-353 FEATURES z Two DTA114Y chips in a package 1 Marking: G5 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest

ft2232d

Abstract: FT2232 FT2232C FT2232L 2777 SC136640
Contextual Info: Future Technology Devices International Limited 373 Scotland Street, Glasgow, Scotland. G5 8QB. U.K. Tel.: +44 0 141 429 2777 Fax.: + 44 (0) 141 429 2758 E-Mail : sales1@ftdichip.com Web : http://www.ftdichip.com Issue Date: 2008- 01- 22 PCN Tracking Number: 00002

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-2E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

FES2J

Abstract: FES1J w5 marking MARKING w5 J4 marking code EA marking code MARKING U1
Contextual Info: Surface Mount Fast Recovery Rectifiers Part No. RS2A RS2B RS2D RS2G RS2J RS2K FRS2A FRS2B FRS2D FRS2G FRS2J FRS2K FRS2M RS3A RS3B RS3D RS3G RS3J RS3K FRS3A FRS3B FRS3D FRS3G FRS3J FRS3K FRS3M Marking Code RA RB RD RG RJ RK G1 G2 G3 G4 G5 G6 G7 RA RB RD RG

FAR-G5CN-942M50-D294

Abstract: transistor D292 FAR-G5CN-877M50-D292 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L224 FAR-G6CH-1G8800-L214 FAR-G6CH-1G8950-L210D FAR-G6CH-1G9600-L215 FAR-G6CH-1G9600-L219
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-1E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for handheld phones continues to increase, so has demand for smaller size, lighter weight and

RX-2 -G s

Abstract: FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D296 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L218 FAR-G6CH-1G8425-L222 FAR-G6CH-1G8425-L227B FAR-G6CH-1G8800-L214 FAR-G6CH-1G9600-L215
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-3E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

1SS196

Contextual Info: 1SS196 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + G5 2.5-0.3 FEATURES: . Small Package SOT-23M0D . Low Forward Voltage V F = 0 .9 V T y p . . Fast Reverse Recovery Time trr= l ,6 n s ( T y p .) . Small Total Capacitance

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO DEL FUSE INC. AND SHALL NOT DE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF DEL FUSE INC. RoHS 2002/95/E C J SCHEMATIC ELECTRICAL CHARACTERISTICS g g5°C -O -O O 4 14 13 POLARITY

G4EU

Abstract: E72873 MIXA20W1200TMH
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV

61845

Abstract: 24-G-5
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-3E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

Contextual Info: TOSHIBA RN2412,RN2413 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN7A17 u m u 'm g RN7A13 m « • w ■ ■ « r Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + G5 2.5 —0.3 • With Built-in Bias Resistors

BAR63

Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Contextual Info: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036

Fujitsu SAW

Abstract: transistor D292 FAR-G5CN-877M50-D292 FAR-G6CH-1G8425-L218 FAR-G6CH-1G8425-L227B FAR-G6CH-1G9600-L228A FAR-G6CN-1G8950-L233 PDC800 FUJITSU saw filter l228a
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-6E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

FAR-G6CH-1G8800-L214

Abstract: FAR-G6CH-1G8950-L210D FAR-G6CH-1G9600-L215 FAR-G6CH-1G9600-L219 PDC800 FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D294 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L224
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-23121-1E ASSP Mobile Communication Systems SAW Dual Filter 700 to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for handheld phones continues to increase, so has demand for smaller size, lighter weight and

G6CN

Abstract: transistor D292 MAX 8997 33 db at 2 ghz transistor D292 DS04-23121-4E ASSP FAR-G5CN-877M50-D292 FAR-G5CN-942M50-D296 FAR-G6CH-1G7475-L216 FAR-G6CH-1G8425-L217 FAR-G6CH-1G8425-L218
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-4E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-23121-5E ASSP Mobile Communication Systems Piezoelectric SAW Dual BPF 700 MHz to 2000 MHz G5/G6 Series (L2/D2 type) • DESCRIPTION As the market for mobile phones continues to increase, so has demand for smaller size, lighter weight and lower

Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:

G4EU

Abstract: ic MARKING QG E72873 DIODE T6 marking
Contextual Info: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:

S4 42 DIODE

Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications

smd diode g6

Abstract: marking G3 IF110 GMM3x60-015X1
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings