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Mersen Electrical Power


Mersen Electrical Power D02GG40V40 Fuse: fuse; D02; industrial; 40A; 400VAC; 250VDC; gG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	D02GG40V40		4		1	1 $2.44 10 $1.95 100 $1.71 1000 $1.71 10000 $1.71	Buy Now
Mersen Electrical Power NH3GG40V400-1 Fuse: fuse; NH3; ceramic; holders; 400A; 400VAC; gG; silver plated
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NH3GG40V400-1				1	1 $63.94 10 $63.94 100 $63.94 1000 $63.94 10000 $63.94	Get Quote
Mersen Electrical Power NH000GG40V4-1 Fuse: fuse; NH000; ceramic; holders; 4A; 400VAC; gG; silver plated
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NH000GG40V4-1				3	1 - 10 $13.03 100 $13.03 1000 $13.03 10000 $13.03	Get Quote
Mersen Electrical Power NH2GG40V400 Fuse: fuse; NH2; ceramic; holders; 400A; 400VAC; gG; silver plated
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	NH2GG40V400				3	1 - 10 $20.28 100 $20.28 1000 $20.28 10000 $20.28	Get Quote
Mersen Electrical Power FR8GG40V4 Fuse: fuse; 8.4x31.5mm; ceramic,cylindrical; clip-on; 4A; 400VAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	FR8GG40V4				10	1 - 10 $1.35 100 $1.35 1000 $1.35 10000 $1.35	Get Quote

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G40V4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGHV1J025D Abstract: G40V4 bonding wire cree Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	cghv1j025d 18ghz high7703 g40v4 +1bonding wire cree	PDF
CGHV1J006D Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	cghv1j006d 18ghz e7703 transistor j813 +6g40v4 hemt .s2p b 1318 191986 high power transistor s-parameters cree gate resistor	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	cghv1j025d 18ghz	PDF
Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	cghv1j006d 18ghz	PDF
Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	cghv1j070d 18ghz	PDF
CGHV1J025D Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high	Original	cghv1j025d 18ghz	PDF
CGHV1J070D Abstract: G40V4 Transistor 17567 Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is	Original	cghv1j070d 18ghz e7703 g40v4 +1transistor 17567	PDF