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    CGHV1J025D Search Results

    CGHV1J025D Datasheets (1)

    Cree/Wolfspeed
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CGHV1J025D-GP4
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE Original PDF 1.15MB
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    CGHV1J025D Price and Stock

    MACOM

    MACOM CGHV1J025D-GP4

    GaN FETs GaN HEMT Die DC-18GHz, 25 Watt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV1J025D-GP4 20
    • 1 -
    • 10 $236.97
    • 100 $232.92
    • 1000 $232.92
    • 10000 $232.92
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    Richardson RFPD CGHV1J025D-GP4 40 10
    • 1 -
    • 10 -
    • 100 $193.75
    • 1000 $193.75
    • 10000 $193.75
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    MACOM CGHV1J025D

    M/A-COM Technology Solutions DIE, 25W, 18.0GHz, GaN HEMT, 510437
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGHV1J025D
    • 1 -
    • 10 -
    • 100 $231.78
    • 1000 $231.78
    • 10000 $231.78
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    CGHV1J025D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CGHV1J025D

    Abstract: G40V4 bonding wire cree
    Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		cghv1j025d18ghzhigh7703g40v4+1bonding wire cree PDF

    CGHV1J025D

    Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		cghv1j025d18ghz PDF

    CGHV1J025D

    Contextual Info: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J025D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		cghv1j025d18ghz PDF