CGHV1J070D Search Results
CGHV1J070D Datasheets (1)
Cree/Wolfspeed
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| CGHV1J070D-GP4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE | Original | 1.13MB |
CGHV1J070D Price and Stock
MACOM
MACOM CGHV1J070D-GP4Trans RF MOSFET N-CH 120V 6A Bare Die Gel |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV1J070D-GP4 | 10 |
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CGHV1J070D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is |
Original |
cghv1j070d18ghz | |
CGHV1J070D
Abstract: G40V4 Transistor 17567
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Original |
cghv1j070d18ghze7703g40v4+1 |