CGHV1J070D Search Results
CGHV1J070D Datasheets (1)
Cree/Wolfspeed
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| CGHV1J070D-GP4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE | Original | 1.13MB |
CGHV1J070D Price and Stock
MACOM
MACOM CGHV1J070D-GP4GaN FETs GaN HEMT Die DC-18GHz, 70 Watt |
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CGHV1J070D-GP4 | 70 |
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CGHV1J070D-GP4 | 10 |
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MACOM CGHV1J070DM/A-COM Technology Solutions DIE, 70W, 18.0GHz, GaN HEMT, 510438 |
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CGHV1J070D |
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MACOM CGHV1J070D-GP5RF JFET Transistors DIE, 70W, 18.0GHz, GaN HEMT, GP5, 510438 |
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CGHV1J070D-GP5 |
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CGHV1J070D Datasheets Context Search
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Contextual Info: CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J070D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high frequency, high efficiency features. It is |
Original |
cghv1j070d18ghz | |
CGHV1J070D
Abstract: G40V4 Transistor 17567
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Original |
cghv1j070d18ghze7703g40v4+1 |