CGHV1J006D Search Results
CGHV1J006D Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| CGHV1J006D-GP4 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V DIE | Original | 563.19KB |
CGHV1J006D Price and Stock
MACOM
MACOM CGHV1J006D-GP4RF MOSFET HEMT 40V DIE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV1J006D-GP4 | Tray | 50 | 10 |
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CGHV1J006D-GP4 | 90 |
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CGHV1J006D-GP4 | 10 |
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MACOM CGHV1J006D-GP5DIE, 6W, 18.0GHZ, GAN HEMT, 1.2M |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CGHV1J006D-GP5 | Tray | 250 |
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Buy Now | ||||||
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CGHV1J006D-GP5 |
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Get Quote | ||||||||
CGHV1J006D Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CGHV1J006D
Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
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CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor | |
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Contextual Info: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high |
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CGHV1J006D CGHV1J006D 18GHz |