G02FL Search Results

BUT12

Abstract: BUT12A BUT12A/B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • [^53=131 G02fl41ñ TG3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a T 0 2 2 0 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems, etc.

Contextual Info: Si GEC P L E S S E Y o c t o b e r i 995 SE M IC OND UC TOR S DS4271-2.2 T F 2 1 9 .B FAST SWITCHING THYRISTOR APPLICATIONS KEY PARAMETERS v DRM 2000V 190A ^T RMS 1200A ^TSM dV/dt 200V/(is dl/dt 500A/|is 40jis • High Power Inverters And Choppers. ■ UPS.

1N45

Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
Contextual Info: SSR1N50/45 SSU1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: Section 18 Electrical Specifications 18.1 Absolute Maximum Ratings Tabic 18-1 lists the absolute maximum ratings. Table 18-1 Absolute Maximum Ratings Rating Item Symbol Supply voltage Vcc -0.3 to +0.7 V Programming voltage V pp -0.3 to +13.5 V Input voltage except port 6

iC KA7552

Abstract: KA7552 KA7553 20S3ci
Contextual Info: KA 7552/3 LINEAR INTEGRATED CIRCUIT PWM CONTROLLER The KA7552/3 are switching power control 1C for wide operating freque­ ncy range. The internal circuits include pulse by pulse current limiting, overload protection, on/off control by external trigger, low standby current,

Contextual Info: International S Rectifier Preliminary Data Sheet No. PD-6.102A IR2233 3-PHASE BRIDGE DRIVER Features Product Summary • Floating channel designed fo r bootstrap operation Fully operational to + 1200V Tolerant to negative transient voltage dV/dt im m une ■ G ate drive supply range from 10 to 20V

Contextual Info: MITSUBISHI LSIs M 5 M 4 1 6 1 6 0 B J ,T P -6 ,-7 ,-6 S ,-7 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1 0 4 8 5 7 6 -word by 1 6 -bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for

Contextual Info: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA TC5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

LQ150X1DG11

Abstract: SHARP LQ150X1DG11 LD-10X05-5 LD-10X05D 4B301 LQ14X03E
Contextual Info: PREPARED BY DATE SPEC No. LD-10X05D FILE No. APPROVED BY SHARP DATE ISSUE : Apr. 26.1999 PAGE TFT Liquid Crystal Display Group SHARP CORPORATION : 18 pages APPLICABLE GROUP TFT Liquid Crystal Display Group SPECIFICATION DEVICE SPECIFICATION FOR TFT-LCD Module

Contextual Info: 5Ë GEC P L E S S E Y S e p t e m b e r 1995 SE M IC OND UC TOR S DS4085-2.2 SV20 RECTIFIER DIODE APPLICATIONS • KEY PARAMETERS v RRM 2000V 220A ' A V 4000A ^F S M Rectification. f ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « m IS 0 120 IS0121 i Precision Low Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS • • • • • 100% TESTED FOR PARTIAL DISCHARGE IS0120: Rated 1500Vrms IS0121: Rated 3500Vrms

Contextual Info: TOSHIBA TMP87PM78 CMOS 8-BIT MICROCONTROLLER TMP87PM78F The 87PM 78 is a One-Time PR O M m icrocontroller w ith low -pow er 256K bits 32K bytes electrically programm able read only memory for the 87CC78/CH78/CK78/CM78 system evaluation. The 87PM78 is pin

DE45 diode

Abstract: de45 PALC20RA10Z PALC20RA10Z-40 PALC20RA10 DE-45
Contextual Info: AOV MICRO P L A / P L E / A R R A Y S 13E D | O S ST SS b 00500.24 0 | J l PALC20RA10Z-40/45 CMOS Programmable Array Logic Zero Standby Power/Electrically Erasable/Asynchronous ZPAL Device U > I- DISTINCTIVE CHARACTERISTICS o o io • • • • • Registers can be bypassed Individually

mml 600

Abstract: 3BL sot
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D • bbSB^Bl □ 02flfl3ci 3bl I IAPX BLU45/12 J l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in S O T - 1 19 envelope prim arily intended for use in m obile radio transmitters in the 4 7 0 M H z com m unications band.

Contextual Info: Section 18 Electrical Specifications 18.1 Absolute Maximum Ratings Tabic 18-1 lists the absolute maximum ratings. Table 18-1 Absolute Maximum Ratings Rating Item Sym bol Supply voltage Vcc -0 .3 to +0.7 V Programming voltage V pp -0.310 +13.5 V Unit Input voltage except port 6

BUV98

Abstract: BUV98A BUV98AV BUV98V sot227a
Contextual Info: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC551001B Pl/B Fl/B FTI/BTRI-85V/10V PRELIMINARY SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001BPL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology,

Contextual Info: S i GEC PLESSEY a u g u st SEMI CO NDUC TOR S 19 9 5 DS4190-2.2 DS2009SF RECTIFIER DIODE KEY PARAMETERS V,RRM 4800V 1105A J AV 20500A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

P13AD

Contextual Info: TOSHIBA TMP87CC78/H78/K78/M78 CM OS 8 -BIT MICROCONTROLLER TMP87CC78F, TMP87CH78F, TMP87CK78F, TMP87CM78F The 87CC78/H78/K78/M78 are th e high speed and high perform ance 8 -bit single chip microcomputers. These MCU contain 8 -bit A/D conversion inputs and a VFT Vacuum Fluorescent Tube d river on a chip.

Contextual Info: Si GEC P L E S S E Y j a n u a r y i 996 SEMI CO NDUC TOR S DS4280-2.1 TF921.H FAST SWITCHING THYRISTOR KEY PARAMETERS v DRM 2500V 1570A ^T RMS 13600A Itsm 500V/|1S dV/dt dl/dt 500A/|1S APPLICATIONS • High Power Inverters And Choppers. ■ UPS. ■ Railway Traction.

Contextual Info: r; a i F r P i F S ììP Y SEPTEMBER 1996 SEM ICO ND UCTO RS ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE KEY PARAMETERS v RRM 6000V 780A J f AV 7800A FSM 1400(iC Qr 6.5jis », APPLICATIONS • Inverters. ■ Choppers. ■ Inverse Parallel Diode.

Contextual Info: MITSUBISHI LSIs p B e U N « n Æ M 5 M 4 V 4 2 6 0 C T P - 6 ,- 7 , - 6 S ,- 7 S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a fam ily of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal