G0225 Search Results

G0225

Contextual Info: SGRAM MODULE G0225MP Q 0 / G0225MP(Q)0 G0225MP(Q)0 / G0225MP(Q)0 SGRAM SODIMM 2Mx64 SGRAM SODIMM based on 1Mx32, 2K Refresh, 3.3V Synchronous Graphic RAMs FEATURE GENERAL DESCRIPTION • Performance range Part NO. M965(6)G0225MP(Q)0-C50 M965(6)G0225MP(Q)0-C60

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

m2131

Abstract: BYV31-500 BYV31-500U S 0319
Contextual Info: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd

EL50P1

Abstract: ES1000C ES300C Hall Effect Current Sensors ABB ES2000C MP25P1 VD1500-48 1SBT172000R9944 EL55P2 EL25P1
Contextual Info: Technical catalogue Current sensors Voltage sensors Current sensors Voltage sensors Contents Technologies Current measuring technology . 4 Voltage measuring technology . 8

Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M52122FP AUTOMATIC ADJUSTMENT-PROVIDED RECORDING AND PLAYING PREAMPLIFIER DESCRIPTION The M 52 12 2F P is a preamplifier for recording and playing on double-cassette tape becks. W ith various circuits for automatic adjustment incorporated, including playing level and

Contextual Info: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a

Contextual Info: Preliminary KMM5322204BW/BWG DRAM MODULE KMM5322204BW/BWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322204BW is a 2M bit x 32 • Part Identification D ynam ic RAM high density m em ory module. The

GF-623

Abstract: 02102 229R GF-323 g4008 gf 824 GF-1123
Contextual Info: Slide Switch-Standard GF-323 S IN G L E P O LE /SIN G LE THRO W with detent GF-324 S IN G L E PO LE/D O U BLE THRO W (with detent) TYPE E L E C T R IC A L R A T IN G L IS T IN G GF-323 GF-G23 GF-823 GF-1123 GF-1323 GF-1623 GF-324 GF-624 GF-824 GF-1124 GF-1324

M2873

Abstract: M2876 m2878 M2872 BYV42 Ultra Fast Recovery Double Rectifier Diodes m073 M2877
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53*131 Â Q022SÖ3 b ■ BY V4 2 b h H I E S T -O Z -rt ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r

Contextual Info: For Im m ilale Assistance, M a d Your Local Salesperson Microprocessor-Compatible 12-BIT DIGITAL-TO-ANALOG CONVERTER verter with voltage output operational amplifier. Fast current switches and laser-trimmed thin-film resistors provide a highly accurate, fast D/A converter.

Contextual Info: BA7180AS/BA7180AFS PRE/REC 2-channel PRE/REC amplifier with auto-tracking interface amplifiers Video ICs The BA7180AS and B A 7180A FS areP R E /R E C am p lifiersd evelop ed for use in video cassette recorders. They ha­ amplifier, an FM output amplifier with AGC , an envelope detector, a constant-current BTL-drive REC amplifier

M07A

Abstract: BYV42 M074
Contextual Info: N AMER PHIL IP S/ DI SCR ET E 2 SE D • ^ 53*131 0 G E 2 S Ö 3 b ■ tSYV42 b h H I E S A T - O Z - * ) ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft-recovery characteristic. They are intended fo r

a708a

Abstract: aplc-2 audio ic 1895 bel pin configuration 1B5a on5252 1d77 1D0900 FC817 MP 1009 es storeo volume control circuit
Contextual Info: CHAPTER 1 GENERAL Page 1.1 Descriptive Expressions Used in This M a n u a l . 1.2 Sample Program F o r m a t . . 1.3 How to Read Subroutine Lists . 1-1 1-4 1-6 APPENDIX 1-7 Sample L i s t . . .

MB86605

Contextual Info: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 16-Bit Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface -RD -CSO -CS1 A4 to AO -BHE MODE1 MODEO t 0 I I I I fl I I I MPU Interface -MSG • -C /D -I/O -ATN ■ Internal Processor Various Registers Timer 32 bytes

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P-idB = 39-5 dBm at 5.9 GHz to 6.4 GHz

Contextual Info: Vìdeo ICs High-voltage audio head selection switch BA7755A/BA7755AF The normal audio circuits of video cassette recorders and the recording circuits of tape decks use AC bias recording to record the audio signal onto the tape. This bias voltage is some tens of volts, and a high-capacity bias-side switch is

samsung kmm5322204aw

Abstract: km416c1204aj kmm5322204aw MFJ 224 km416c1204a 2MX32 EDO SIMM Samsung
Contextual Info: DRAM MODULE KMM5322204AW/AWG KMM5322204AW/AWG Fast Page Mode with Extended Data out 2Mx32 DRAM SIMM, 5V, 1K Refresh Using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N FEATURES The Samsung KMM5322204AW is a 2M bit x 32 • Part Identification Dynamic RAM high density m em ory m odule. The

M51581FP

Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M51581FP/GP DIGITAL AUDIO INTERFACE DAI DESCRIPTION The M 51581 is a semiconductor 1C for transmitting and receiving signals formed according to a digital audio interface form at conforming to the EIAJ standards. It has a variety of functions as it supports both professional and consumer modes and can be

G022

Abstract: M1239 ALPS 102 alps 103 b BYV30 BYV30-400U
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • 1^53*131 0022S37 T ■ BYV30 SEHItS 7 ^ 0 3 - /7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO— 4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.