FQI7N60 Search Results

DSA0021811

Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.

Contextual Info: FQB7N60 / FQI7N60 April 2000 QFET TM FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB7N60 / FQI7N60 April 2000 QFET TM FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB7N60 / FQI7N60 October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQB7N60

Abstract: FQI7N60 LS74A 74a diode
Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V Advanced New Design R DS ON = 1 Avalanche Rugged Technology In = 7.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 28nC (Typ.)

Contextual Info: FQB7N60 / FQI7N60 N-Channel QFET MOSFET 600 V, 7.4 A, 1.0 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

FQB7N60

Abstract: FQI7N60
Contextual Info: FQB7N60 / FQI7N60 April 2000 QFET TM FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB7N60 / FQI7N60 N-Channel QFET MOSFET 800 V, 3.9 A, 3.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

FQB7N60

Abstract: FQI7N60
Contextual Info: FQB7N60 / FQI7N60 October 2008 QFET FQB7N60 / FQI7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET N-CHANNEL FQB7N60, FQI7N60 FEATURES BV dss = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.

Contextual Info: FQB7N60 / FQI7N60 N-Channel QFET MOSFET 600 V, 7.4 A, 1.0 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

3phase MOSFET INVERTER

Abstract: 2KW bldc 3 phase IGBT inverter 30KW brushless dc motor 3 phase 75kW motor soft circuit diagram PWM 220v ac stabilizer PFC 3kw FSBS15CH60 FSBB30CH60 3 phase inverters circuit diagram igbt 30kw
Contextual Info: Motor Drive Solutions Integrated modules SPM • Discrete components • Online tools n Pmech = M • � = M • 2 • � • _ = √3 • U • I • cos (�) • � 60s _ min –1 Optimize your motor designs: less energy, cost and time.

SSI5N60A

Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
Contextual Info: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

fairchild mosfet selection guide

Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
Contextual Info: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics

fqpf5n60c

Abstract: FAN7711 FQPF18N50 Fairchild MOSFET FQT1N80 FQP9N50C FQPF*5n50c fjp13009 FJP5027 FQD7P20
Contextual Info: Fairchild’s Solutions for Lighting Applications H I D LIGHTING C O M PA C T F L U O R E S C E N T L A M P B A L L A S T S S I G NAGE LIGHTING LINEAR FLUORESCENT LAMP BALLASTS LINEAR FLUORESCENT LAMP BALLAST 3 Ballast Control ICs 3 High Voltage Gate Drivers HVIC

thermistor KSD201

Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V