Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FQI50N06 Search Results

    FQI50N06 Datasheets (7)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQI50N06
    		Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF 661.68KB 9
    FQI50N06
    		Fairchild Semiconductor QFET N-CHANNEL Scan PDF 393.83KB 8
    FQI50N06L
    		Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF 668.3KB 9
    FQI50N06L
    		Fairchild Semiconductor QFET N-CHANNEL Scan PDF 324.98KB 6
    FQI50N06LTU
    		Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF 668.3KB 9
    FQI50N06LTU
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A I2PAK Original PDF 8
    FQI50N06TU
    		Fairchild Semiconductor 60V N-Channel QFET Original PDF 661.67KB 9
    SF Impression Pixel

    FQI50N06 Price and Stock

    Select Manufacturer

    Rochester Electronics LLC FQI50N06TU

    MOSFET N-CH 60V 50A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI50N06TU Bulk 337
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.89
    • 10000 $0.89
    		Buy Now

    onsemi FQI50N06TU

    MOSFET N-CH 60V 50A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI50N06TU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.70
    • 10000 $0.70
    		Buy Now
    Verical () FQI50N06TU 27,103 351
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.89
    • 10000 $0.79
    		Buy Now
    FQI50N06TU 970 351
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.89
    • 10000 $0.79
    		Buy Now
    FQI50N06TU 951 351
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.89
    • 10000 $0.79
    		Buy Now
    Newark FQI50N06TU Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Rochester Electronics FQI50N06TU 28,073 1
    • 1 -
    • 10 -
    • 100 $0.86
    • 1000 $0.71
    • 10000 $0.63
    		Buy Now

    onsemi FQI50N06LTU

    MOSFET N-CH 60V 52.4A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI50N06LTU Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.52
    • 10000 $0.52
    		Buy Now
    Verical FQI50N06LTU 1,730 244
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.38
    • 10000 $1.29
    		Buy Now

    Rochester Electronics LLC FQI50N06LTU

    MOSFET N-CH 60V 52.4A I2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQI50N06LTU Tube 224
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.34
    • 10000 $1.34
    		Buy Now

    Fairchild Semiconductor Corporation FQI50N06LTU

    Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FQI50N06LTU 1,730 1
    • 1 -
    • 10 -
    • 100 $1.23
    • 1000 $1.10
    • 10000 $1.03
    		Buy Now
    Find more FQI50N06 price and stock on Findchips.com

    FQI50N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06L FQI50N06L FQB50N06LTM O-263 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06L FQI50N06L FQI50N06L PDF

    MOTOR DRIVER 48v 50A

    Contextual Info: FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQB50N06 FQI50N06 FQI50N06 MOTOR DRIVER 48v 50A PDF

    Contextual Info: FQB50N06L / FQI50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		FQB50N06L FQI50N06L FQI50N06L PDF

    Contextual Info: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06L FQI50N06L FQI50N06L PDF

    Contextual Info: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06 PDF

    Contextual Info: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    Original     		FQB50N06L, FQI50N06L FQB50N06L PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: Q F E T N-CHANNEL FQB50N06L, FQI50N06L FEATURES 60 V BVqss = Advanced New Design r d s ON Avalanche Rugged Technology = 0.021 Q. ID = 52.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k |2-p a k


    OCR Scan     		FQB50N06L, FQI50N06L FQB50N06L FQI50N06L PDF

    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.


    Original     		FQB50N06, FQI50N06 FQB50N06 PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06TU O-262 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06L FQI50N06L FQI50N06L PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06 PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: FQB50N06 / FQI50N06 April 2000 QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06 PDF

    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06L FQI50N06L FQI50N06L FQI50N06LTU O-262 PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BV qss = 60V Advanced New Design RDS ON = 0.022Î2 Avalanche Rugged Technology lD = 50A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 31 nC (Typ.)


    OCR Scan     		FQB50N06, FQI50N06 018i2 Dissipation06, D2PAK/TO-263 PAK/TO-263 FQB50N06 FQI50N06 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: FQB50N06L / FQI50N06L April 2000 QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB50N06L FQI50N06L FQI50N06L PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQB50N06TM O-263 PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 PDF

    Contextual Info: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVqss = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    OCR Scan     		FQB50N06L, FQI50N06L PDF

    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ.


    OCR Scan     		FQB50N06, FQI50N06 022Cl D2PAK/TO-263 D2PAK/TO-263 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 PDF