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    FQB50N06 Search Results

    FQB50N06 Datasheets (7)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQB50N06
    		Fairchild Semiconductor 60 V N-Channel MOSFET Original PDF 661.68KB 9
    FQB50N06
    		Fairchild Semiconductor QFET N-CHANNEL Scan PDF 393.83KB 8
    FQB50N06L
    		Fairchild Semiconductor 60 V Logic N-Channel MOSFET Original PDF 668.3KB 9
    FQB50N06L
    		Fairchild Semiconductor QFET N-CHANNEL Scan PDF 324.98KB 6
    FQB50N06LTM
    		Fairchild Semiconductor 60V N-Channel Logic level QFET Original PDF 668.3KB 9
    FQB50N06LTM
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 52.4A D2PAK Original PDF 8
    FQB50N06TM
    		Fairchild Semiconductor 60V N-Channel QFET Original PDF 661.67KB 9
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    onsemi FQB50N06LTM

    - Tape and Reel (Alt: FQB50N06LTM)
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    Avnet Americas FQB50N06LTM Tape & Reel 800
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    Flip Electronics FQB50N06LTM 18,400
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    Vyrian FQB50N06LTM 600
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    Fairchild Semiconductor Corporation FQB50N06TM

    N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA FQB50N06TM 800
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    Win Source Electronics FQB50N06TM 11,200
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    onsemi FQB50N06TM

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    Vyrian FQB50N06TM 640
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    Fairchild Semiconductor Corporation FQB50N06LTM

    MOSFET N-CH 60V 52.4A D2PAK
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    Win Source Electronics FQB50N06LTM 439
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    Fairchild Semiconductor Corporation FQB50N06

    60V N-Channel MOSFET
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    Win Source Electronics FQB50N06 355
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    FQB50N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06lfqi50n06lfqb50n06ltmo-263 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06lfqi50n06l PDF

    MOTOR DRIVER 48v 50A

    Contextual Info: FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		fqb50n06fqi50n06motor driver 48v 50a PDF

    Contextual Info: FQB50N06L / FQI50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce


    Original     		fqb50n06lfqi50n06l PDF

    Contextual Info: QFET FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06lfqi50n06l PDF

    Contextual Info: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06 PDF

    Contextual Info: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    Original     		fqb50n06lfqi50n06l PDF

    Contextual Info: FQB50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		fqb50n06l PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: Q F E T N-CHANNEL FQB50N06L, FQI50N06L FEATURES 60 V BVqss = Advanced New Design r d s ON Avalanche Rugged Technology = 0.021 Q. ID = 52.4A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k |2-p a k


    OCR Scan     		fqb50n06lfqi50n06l PDF

    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ.


    Original     		fqb50n06fqi50n06 PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06fqi50n06tuo-262 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06lfqi50n06l PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06 PDF

    Contextual Info: FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		fqb50n06fqi50n06 PDF

    Contextual Info: QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06lfqi50n06lfqi50n06ltuo-262 PDF

    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BV qss = 60V Advanced New Design RDS ON = 0.022Î2 Avalanche Rugged Technology lD = 50A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 31 nC (Typ.)


    OCR Scan     		fqb50n06fqi50n06018i2dissipation06+2d2pak/to-263pak/to-263 PDF

    FQB50N06L

    Abstract: FQI50N06L
    Contextual Info: FQB50N06L / FQI50N06L April 2000 QFET TM FQB50N06L / FQI50N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		fqb50n06lfqi50n06l PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06fqb50n06tmo-263 PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		fqb50n06fqi50n06 PDF

    Contextual Info: QFET N-CHANNEL FQB50N06L, FQI50N06L FEATURES BVqss = 60V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 24.5nC Typ.


    OCR Scan     		fqb50n06lfqi50n06l PDF

    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BVDSS = 60 V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31 nC Typ.


    OCR Scan     		fqb50n06fqi50n06022cld2pak/to-263 PDF

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		2n70022n7002mtfbs170bss123+16bss138bss84fdb045an08a0fdb2532fdb3632fdb3652fdc6331fdp047anfdb045anfqpf10n20fqa70n15fqpf*13n06lfdd5614pfqp50n06to252-dpakfdc6305 PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		thermistor ksd201irf power mosfets catalogcomplementary mosfets buz11bzx85c6v8 spice model+6diode 1n4001 50v 1.0a do-41 rectifier diodek*d1691make smps inverter welding machinetransistor ksp441n5402 spice modeltip122 tip127 mosfet audio amp PDF