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    FQB50N06

    Abstract: FQI50N06
    Contextual Info: QFET N-CHANNEL FQB50N06, FQI50N06 FEATURES BV qss = 60V Advanced New Design RDS ON = 0.022Î2 Avalanche Rugged Technology lD = 50A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics d 2- p a k i 2- p a k Unrivalled Gate Charge: 31 nC (Typ.)


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    fqb50n06fqi50n06018i2dissipation06+2d2pak/to-263pak/to-263 PDF