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    FQI50N06TU Search Results

    FQI50N06TU Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQI50N06TU
    		Fairchild Semiconductor 60V N-Channel QFET Original PDF 661.67KB 9
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    FQI50N06TU Price and Stock

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    Rochester Electronics LLC FQI50N06TU

    MOSFET N-CH 60V 50A I2PAK
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    onsemi FQI50N06TU

    MOSFET N-CH 60V 50A I2PAK
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    Rochester Electronics FQI50N06TU 28,073 1
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    Fairchild Semiconductor Corporation FQI50N06TU

    Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    Rochester Electronics FQI50N06TU 1,792 1
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    FQI50N06TU Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: QFET TM FQB50N06 / FQI50N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQB50N06 FQI50N06 FQI50N06TU O-262 PDF

    Contextual Info: FQB50N06 / FQI50N06 N-Channel QFET MOSFET 60 V, 50 A, 22 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		FQB50N06 FQI50N06 PDF