FQD3P50 Search Results

FQD3P50TM_F085

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

400v p-channel mosfet

Contextual Info: FQD3P50TM_F085 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD3P50

Abstract: FQU3P50
Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

P-Channel mosfet 400v

Abstract: FQD3P50 FQU3P50
Contextual Info: FQD3P50 / FQU3P50 January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 August 2000 QFET TM FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD3P50 / FQU3P50 January 2009 QFET FQD3P50 / FQU3P50 500V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

CMZ59448

Abstract: LTBSZ ltbnd diode G21 2A 100v LTC6101HV LTC2433-1 LTC6101 DC 5V to DC 100V CIRCUIT DIAGRAM 6101fa
Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset

LTC6106

Abstract: BZX88 10kROUT led 3mm LT6100 mosfet motor dc 48v thermal fuse 115 250V 2A LTC2433-1 LTC6102 LTC6102IMS8
Contextual Info: LTC6102/LTC6102HV Precision Zero Drift Current Sense Amplifier FEATURES DESCRIPTION n The LTC 6102/LTC6102HV are versatile, high voltage, high-side current sense amplifiers. Their high supply voltage rating allows their use in almost any application, while the low drift and offset ensure accuracy across a

CMZ5944B

Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 DESCRIPTION FEATURES n n n n n n n n n n n Supply Range: 5V to 100V, 105V Absolute Maximum LTC6101HV 4V to 60V, 70V Absolute Maximum (LTC6101) Low Offset Voltage: 300 V Max Fast Response: 1μs Response Time (0V to 2.5V on

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

tdb 7805

Abstract: LM317 dc adaptor 12v to 3.6v LTC4442 LT3080 bh510-1009 theory of regulated 9v power supply using LM317 schematic diagram 12v - 48v dc buck boost convert LT3785 JMK325BJ107 Luxeon K2 driver schematic lm317
Contextual Info: LINEAR TECHNOLOGY OCTOBER 2007 IN THIS ISSUE… Cover Article Low Dropout Regulator Can Be Directly Paralleled to Spread The Heat.1 Robert Dobkin Linear in the News….2 Design Features 16-Channel LED Driver Drives up to 160

LT6100

Abstract: LTC6102 BAT46 FQD3P50 LT6106 MO-193 DC1240 CMPZ12L
Contextual Info: LT6107 High Temperature High Side Current Sense Amp in SOT-23 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Fully Tested at –55°C, 25°C and 150°C Gain Configurable with Two Resistors Low Offset Voltage: 250 V Maximum Output Current: 1mA Maximum

LTC6106

Abstract: BZX88 ZENER 68V 1W
Contextual Info: LTC6102/LTC6102HV Precision Zero Drift Current Sense Amplifier FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Supply Range: 4V to 60V, 70V Absolute Maximum LTC6102 5V to 100V, 105V Absolute Maximum (LTC6102HV) ±10 V Input Offset Maximum ±50nV/°C Input Offset Drift Maximum

CMPZ12L

Abstract: LT6106H
Contextual Info: LT6106 36V Low Cost High Side Current Sense in a SOT-23 FEATURES DESCRIPTION • The LT 6106 is a versatile high side current sense amplifier. Design flexibility is provided by the excellent device characteristics: 250µV maximum offset and 40nA maximum input bias current. Gain for each device is set by two

CMZ5944B

Contextual Info: LTC6101/LTC6101HV High Voltage, High-Side Current Sense Amplifier in SOT-23 U FEATURES DESCRIPTIO • The LTC 6101/LTC6101HV are versatile, high voltage, high side current sense amplifiers. Design flexibility is provided by the excellent device characteristics; 300µV Max offset

BAT46

Abstract: LT6106 MO-193 DC1240
Contextual Info: LT6106 36V Low Cost High Side Current Sense in a SOT-23 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Gain Configurable with Two Resistors Low Offset Voltage: 250 V Maximum Output Current: 1mA Maximum Supply Range: 2.7V to 36V, 44V Absolute Maximum

SSP6N60A

Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

LT6106

Abstract: CMPZ12L BAT46 spice LT6106HS5#TRMPBF OUT12V
Contextual Info: LT6106 36V Low Cost High Side Current Sense in a SOT-23 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Gain Configurable with Two Resistors Low Offset Voltage: 250 V Maximum Output Current: 1mA Maximum Supply Range: 2.7V to 36V, 44V Absolute Maximum

FQPf10N60C

Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Contextual Info: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V

Contextual Info: LT6106 36V Low Cost High Side Current Sense in a SOT-23 FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Gain Configurable with Two Resistors Low Offset Voltage: 250 V Maximum Output Current: 1mA Maximum Supply Range: 2.7V to 36V, 44V Absolute Maximum