FORMER Search Results

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

SN76514

Abstract: L-442 L442 TL442
Contextual Info: LINEAR INTEGRATED CIRCUITS T Y P E S TL442 M , TL442C B A LA N C ED MIXERS B U L L E T I N N O . D U -S 1 1 4 3 0 , O C T O B E R 1 9 7 9 FORMERLY SN56514, SN76514 Flat Response to 100 MHz Local Oscillator IF Isolation . . . 30 dB Typ J O R N D U A L -IN -L IN E P A C K A G E

Contextual Info: BCE Sud Passive Components Product specification Supersedes data of 23 October 2000 2002 November 04 BCE Sud Passive Components A former part of Philips Components BCE Sud Passive Components 2002 November 04 BCE Sud Passive Components 2002 November 04 BCE Sud Passive Components

QQ-S-571E

Abstract: flux F-SW32 DTD599A J-STD-006A QQS-571-E MCF800 QQ-S571E QQ-S-571 MSDS SOLDER WIRE F-SW32
Contextual Info: Laboratory Data Sheet Product 370 WRAP March 2003 Cored Solder Wire RA Type PRODUCT DESCRIPTION Multicore 370 (formerly WRAP) solid flux for cored solder wire has been specially formulated to conform to the QQ-S571E Type RA specification. Multicore™ 370 solid flux is our

TQFP 144 PACKAGE Freescale

Abstract: DSP56309 DSP56302 EB346 SC10 SC11 SC12 cpcap
Contextual Info: Freescale Semiconductor Engineering Bulletin EB346 Rev. 3, 10/2005 Functional Differences Between DSP56302 and DSP56309 formerly DSP56302A To meet the increasing demands for higher performance and lower power consumption, an advanced DSP56302 has been designed; it is was formerly known as DSP302A; it is now

E315805

Abstract: P40-G240 Bourns TBU High Speed Protectors GR-1089 P40-G marking 04GC P40-G240-WH
Contextual Info: PL IA NT CO M *R oH S Features Applications • Formerly ■ xDSL ADSL, VDSL, VDSL2 ■ ■ High Data Rate Interface IC protection ■ ■ ■ ■ ■ brand Extremely high speed performance Low impedance Two TBU protectors in one small package Very high bandwidth, GHz compatible

GENERAL SEMICONDUCTOR MARKING RJ

Abstract: marking code RB
Contextual Info: RS2A thru RS2K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier Reverse Voltage 50 to 800V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout 0.185 MAX.

do-214ab ed vishay

Contextual Info: ES3A thru ES3D Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Plastic Rectifier DO-214AB SMC Reverse Voltage 50 to 200V Forward Current 3.0A Reverse Recovery Time 20ns Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90)

88347

Abstract: GSOT03C GSOT03 GSOT04 GSOT04C GSOT05 GSOT05C GSOT08 GSOT36C
Contextual Info: GSOT03 thru GSOT36C Vishay Semiconductors New Product formerly General Semiconductor Miniature Transient Voltage Suppressors Mounting Pad Layout TO-236AB SOT-23 0.031 (0.8) .122 (3.1) .110 (2.8) .016 (0.4) 0.035 (0.9) Top View 3 .056 (1.43) .052 (1.33) 0.079 (2.0)

Contextual Info: -Ætttrun Ä \Y Ä [L VERY HIGH VOLTAGE, FAST SWITCHING Devices. Inc. NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUM BER (FORMERLY 42 CONTACT METALLIZATION B ase a n d emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilver" also available)

Contextual Info: Contran Ä ¥Ä 1L© M E D IU M VOLTAGE, FAST SW ITCHING, HIGH GAIN Devices. Inc MONOLITHIC N P N EPITAXIAL PLANAR POWER DARLINGTON TR A N S IS TO R * (FORMERLY 0 3 ] CHIP NUMBER c -n CONTACT METALLIZATION B a se and emitter: > 30,000 A Aluminum Collector: Gold

Contextual Info: MB2S thru MB6S Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier Reverse Voltage 200 to 600V Forward Current 0.5A TO-269AA MBS 0.029 (0.74) 0.017 (0.43) Mounting Pad Layout 0.023 MIN.

Contextual Info: RMB2S and RMB4S Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier Reverse Voltage 200 to 400 V Forward Current 0.5 A Reverse Recovery time 150 ns TO-269AA MBS 0.029 (0.74) 0.017 (0.43)

2N6261

Contextual Info: -Jiolitron [ ^ » © T ©ATTM.©' Devices. Inc MEDIUM VOLTAGE CH IP N UM BER NPN SINGLE DIFFUSED MESA TRANSISTOR FORMERLY 06 CONTACT METALLIZATION B ase, Emitter a n d Collector Solder C o ated 95/5% le ad /tin . ASSEMBLY RECOMMENDATIONS It is ad v isa b le that:

391SVSR2

Abstract: 3936SJZ 2022-60A 3951 R123VSR2 F1007669 IEEE-465 surge protector 3936 3936SVSR2
Contextual Info: CO & OUTSIDE PLANT PRODUCTS Bourns GDT Products Group Former ENP F Series Part Number Changes Riverside, California - January 15, 2009 - Bourns recently acquired certain products from Emerson Network Power ENP . Among them were the F Series station protection assemblies with screw-in surge protectors. All of these

RL855-100M-RC

Abstract: RL855-220K-RC RL855-330K-RC RL855-470K-RC
Contextual Info: NT IA PL M CO S oH *R 22 Features Applications • Formerly J.W.Miller model ■ Current rating up to 2.5 A ■ Inductance range: 10 µH to 10,000 µH ■ ■ ■ ■ ■ RoHS compliant* DC/DC converters Power supplies Desktop notebooks Output chokes RL855 Series - Radial Lead RF Choke

PM12639S-1R2M-RC

Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller model ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 3.7 mm ■ Inductance range: 0.67 µH to 1.2 µH ■ Current up to 28 A ■ RoHS compliant*

PM7032S-6R8M-RC

Abstract: PM7032S-2R2M-RC
Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller model ■ Input/output of DC/DC converters ■ Available in E6 values ■ Power supplies for: *R oH S Features ■ Inductance value to 1000 µH 15 • • • • ■ Lead free ■ RoHS compliant* Portable communication equipment

PM12651S-4R7M-RC

Abstract: PM12651S-9R0M-RC
Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller models ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 5.9 mm ■ Inductance range: 0.22 µH to 10 µH ■ Current up to 45 A ■ RoHS compliant*

PM12645S-1R2M-RC

Abstract: PM12651S-4R7M-RC PM12651S-9R0M-RC PM12645S-2R7M-RC
Contextual Info: NT IA PL M CO Applications • Formerly J.W.Miller models ■ Input/output of DC/DC converters ■ Shielded construction ■ Power supplies for: oH S Features *R ■ Unit height of 5.9 mm ■ Inductance range: 0.22 µH to 10 µH ■ Current up to 45 A ■ RoHS compliant*

transistor c118

Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
Contextual Info: i?[M [5)y Tr -Jfotitron M ED IU M TO HIGH V O L T A G E Devices. Inc CHIP NUM BER 4 NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 49) CONTACT METALLIZATION B ase, Emitter and Collector Solder C oated 9 5 /5 % lead /tin. ASSEMBLY RECOMMENDATIONS .300” It is advisable that:

Contextual Info: -Ælitron [P ^ 6 [ d)Q J] T © Ä T T M , Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING NPIM TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 40) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)

sdm3400

Contextual Info: ^falitran £ \L© MEDIUM VOLTAGE, FAST SWITCHING, HIGH GAIN Devices, Inc. PNP EPITAXIAL PLANAR POWER DARLINGTON* * (FORMERLY 30 CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrom e Nickel Silver" also availab le)

Contextual Info: MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60A Forward Current 30A ITO-220AB MBRF25xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)