FORIA Search Results

EUPEC T828N

Abstract: T828N
Contextual Info: EUPEC SEE J> m 34D32T7 000G7TÖ 3TT •UPEC T828N "7 ^ 2 3 -^ 2 0 Typenreihe/Type range T 8 2 8 N_200_ 4 0 0 _ 6 0 0 _ 700 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte

M57S

Abstract: 100-FU
Contextual Info: 6427525 N E C N E C EL EC TR O N I C S INC 98D 19071 ELECTRONICS INC Tfl D DE | b M 2752S D O M O ? ! h l ~ W D C I I fUl I ÍXJ ß W Y ^ P R E U M IÍN A K Y M OS F I E L D E F F E C T ELECTRON DEVICE w w r ' i z f l r - * “ T !f ö H fc U r T U A T iC » ’

Contextual Info: 6427525 TÛ N E C De | ELECTRO N ICS bM27S5S OaiöTBfi INC b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIE LD EFFECT P OWE R TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL S I L I C O N POWER MOS FET FEATURES « S u ita b le f o r sw itch in g power s u p p lie s ,

Contextual Info: 1N 42 45 thru 1N 42 49 iJ W Microsemi Corp. r fte chode experts SANTA A N A , CA F o r m o re in fo rm a tio n call: 714 979-8220 MILITARY RECTIFIERS FEATURES • MICROM INIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED G LASS PACKAGE • TRIPLE LAYER PASSIVATION

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Abstract: 2SJ137 2SJ13
Contextual Info: N E C ELECTRONICS INC Tfl DE|L457SBS GDnGSl PRELIMINARY SFEClFiCAT.C'MOS FIELD EFFECT T RAN' S I S T C: 2S J 137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIM EN SIO N S Features Unit : mm Suitable for switching power supplies, actuator controls and pulse circuits

2SJ135

Abstract: k 3919 for1a
Contextual Info: N E C ELECTRONICS INC ~Tfl » F | t 4 E 7 S a S □ 03.'TO43 1 | _ 7 ~ PRELIM INARY S F E C IF IC A T MOS FIELD EFFECT T RA X S I ST C : ELECTRON DEVICE 2 S FAST SWITCHING P - C H A N N E L S I L I C O N P O WE R PACKAGE DIMENSIONS j ,7 ± 0 .2 . : ± o.2

k 3919

Abstract: CI047 f0r1a F0R1
Contextual Info: 6427525 N E C N EC ELECTRONICS 98D INC 19047 T" 39 W D ~Tfl I ¥ l b 427 SHS 0 D l ci 047 1 ' J r _ PR EL IM IN AR Y SrECiFiCATIC' >rEC ELECTRONICS INC MOS FIELD I RAN 'S 1S T . EFFECT ELECTRON DEVICE S 2 FAST SWITCHING P - C H A X X E L S I L I C O N POWER

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Abstract: 2SJ143 J22G
Contextual Info: N E C ELECTRONICS INC "tö deT| b 4 a ? 5 E S 3 | ~ 7 ^ —3 ^^-1 <J oonoTs P R E L I M I N A R Y S F E C IF IC A T iC ‘ MOS F I E L D E F F E C T T R A N S I S ELECTRON DEVICE 2 S J 1 4 3 F A S T S W I T C H I N G P - CHAN N EL S I L I C O N PO W ER PACKAGE DIM ENSION S

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Abstract: 2SJ133 6C Y TCH C111
Contextual Info: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D I NC Tû MO § D 'f-'lf-J? 19035 DE | b MS T S S S FIELD 00nD3S EFFECT 2 S FAST SWITCHING P - C H A N N E L S I L I C O N P O WE R MÓS S T R A N S I S T C?. J 1 3 3 FET Features p a c k a g e dimensions

Contextual Info: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D D E |b M E 7 S 5 S INC MOÇ D X ^ 1 f -/? 19035 FIELD OOITDBS EFFECT E TRANS I STC = ELECTRON DEVICE 's FAST SWITCHING P-CHANNEL S IL IC O N POWER 3 , I ill 0.6 = 0.1 Absolute Maximum Ratings Ta=25*C Drain t o Source Voltage

4311-VM

Contextual Info: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK431 i] A S A H I KA S E

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Abstract: 2sk8
Contextual Info: "tû 6427525 N E C D Ë T |b 4 E 7 5 S 5 ELECTRONICS D D lû ^ û INC 98D FA ST S W IT C H IN G N -CH AN N EL S IL IC O N POWER PA CK A G E DIM ENSIONS 4.7 MAX S .2 ± 0 .2 7 = 0 .2 3.0 MAX y\ 1 u /> i h !!! 1 .3 = 0 .: 0 .5 = 0 . in ill 2 .i = 0.1 r i 2.U

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Abstract: 2SJ142 nec 251c 251c nec PGTL 251C f0r1a
Contextual Info: 6427525 N E C N E C ELECTRONICS I N C _ 9 8 D ELEC TRO NIC S INC Tfl 1 9 0 71 D T — S q — i* DE | b427555 GGIIG?! h h r e u m i i n a k y MOS FIELD EFFECT a i - t t i f l u A T i C i T RAN’ S I S T o : 2 S J 142 FAST SWITCHING P - C H A N N E L S I L I C O N POWER

nb 358 d

Abstract: EUPEC T 218 N 12 EUPEC T TT308
Contextual Info: EUPEC SEE J> m 34D32T7 000G7TÖ 3TT •UPEC T828N " 7 ^ 2 3 -^ 2 0 Typenreihe/Type range T 828 N_ 200_ 400_ 600_ 700 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vrrm Periodische Vorwärts- und

testing motherboards using multi meter

Abstract: CC8520 home security system by using 8051 microcontroller 2.1 to 5.1 home theatre circuit diagram with remote control 5.1 home theatre remote circuit diagram CC1180 CC2570 CC2544 CC2571
Contextual Info: Wireless Connectivity RF ICs and proprietary protocols for the Sub-1 GHz and 2.4 GHz frequency bands, 6LoWPAN, ANT , Bluetooth , Bluetooth low energy, GPS, IEEE 802.15.4, PurePath™ Wireless audio, RFID/NFC, Wi-Fi®, ZigBee® PRO, ZigBee RF4CE www.ti.com/wirelessconnectivity

intel 8288

Abstract: intel 8288 bus controller 8085 MICROCOMPUTER SYSTEMS USERS MANUAL 8086 interrupt structure design fire alarm 8088 microprocessor RCA SK CROSS-REFERENCE 8086 family users manual 8086 user manual AP 67 weir smm 200
Contextual Info: iAPX 86, 88 USER'S MANUAL AUGUST 1981 Intel Corporation makes no warranty for the use of its products and assumes no responsibility for any errors which may appear in this document nor does it make a commitment to update the information contained herein. Intel software products are copyrighted by and shall remain the property of Intel Corporation. Use, duplication or

S2153

Abstract: GQGQ752 T348N 34G3S
Contextual Info: EUPEC S2E ì> m 34D32T7 DDDG7SG 451 » U P E C T 348 N 100 Typenreihe/TVpe range T 348 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom Itrmsm Dauergrenzstrom

MCA chip set

Abstract: LDR -03 DIG641 cf8h benedict super i&o IA-64
Contextual Info: Designing Interoperability into IA-64 Systems: DIG64 Guidelines Michael Demshki - Intel, DIG64 Chair Melvin Benedict - Compaq, Hardware Architect Dong Wei - Hewlett-Packard, Platform Architect Tomm Aldridge - Intel, Architecture Manager 1 Agenda l Introduction

Contextual Info: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET

Contextual Info: _ 6 4 2 7 5 2 5 N E C N E C ELECTRONICS 98D INC E L E C T R O N I C S INC ~Tû 19059 071^427525 MOS FIELD DOnDST 5 T P R E L I M I N A R Y S r E C I F iC ; EFFECT T RAN' S I S I C ELECTRON DEVICE FAST SWITCHING P - C H A N N E L S I L I C O N P O W E R MO S

RSS140N03

Abstract: TSQ03080-19 TSQ030S TSZ22111
Contextual Info: m m ni n u fiiffi PRODUCTS TYPE SOP« HSS140N03 1.TYPE RSS140N03 2 . STRUCTURE S ILIC O N N -C H A N N E L KOS FET 3 . A P P L I CAT IONS S IIT C H INC 4 . ABSOLUTE MAXI HUM RATINGS VD SS GATE-SOURCE VOLTAGE VGSS SQURCE CURRENT Ï/3 [Ta=25*C] DRAIN-SOURCE VOLTAGE

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Abstract: k 3919
Contextual Info: 6427 52 5 N E C NEC 98D ELECT RON IC S INC ELECTRONICS INC ~Tû D F |k 4 E 7 5 2 S MO S o 19059 FIELD □ O lT D S 'i 5 T P R E L IM IN A R Y 5 r E CIFiC; EFFECT T R AN' S ! S T ELECTRON DEVICE 2 S J 139 FAST SWITCHING P - C H A N N E L S I L I C O N POWER

TT308

Contextual Info: EUPEC S2E ì> m 34D32T7 DDDG7SG 451 » U P E C T 348 N 100 Typenreihe/TVpe range T 348 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom Itrmsm Dauergrenzstrom