FMQG5GS Search Results

G2GS

Abstract: 615t FMQ-G1FS
Contextual Info: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

fmqg5g

Abstract: FMQG5F FMRG5H fmqg2fs fmqg2f
Contextual Info: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)

FMUG16

Abstract: FMQG5FM fmqg2f fmqg5g
Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

ru 52 8 pin

Abstract: diodes ru 4c fmqg5g
Contextual Info: Fast Recovery Rectifier Diodes 4-2 4-2-1 Part No. 1 Chip VRM IF IFSM trrq trrw V (A) (A) (µS) (µS) Package Fig. No. Part No. EU 2YX 1.2 25 0.2 0.08 Axial(E1) 3 RS 1A RU 2YX 1.5 30 0.2 0.08 Axial(R1) 4 AU02A RU 3YX 2.0 50 0.2 0.08 Axial(R2) 5 EU02A 70 0.4

G2GS

Abstract: FMQ-G1FS
Contextual Info: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)

FMQ-G1FS

Abstract: ES01F FMQ-G5FMS
Contextual Info: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5 10/10

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

FMP-G2FS

Abstract: FMPG2F fmqg1f
Contextual Info: VRM V I F (AV) (A) Part Number 50Hz VR = VRM VR = VRM max max t rr Ta (°C) t rr 1 (µs) IF / I FP (mA) 2 (µs) IF / I FP (mA) 1.0 10 0.5 100 4.0 10/10 1.3 100/200 12 0.6 RH 10F 0.8 60 –40 to +150 1.0 1.0 10 0.5 100 4.0 10/10 1.3 100/200 15 0.44 RH 2F

FMQG5GS

Contextual Info: VRM V I F (AV) (A) Part Number 50Hz VR = VRM VR = VRM max max t rr Ta (°C) t rr 1 (µs) IF / I FP (mA) 2 (µs) IF / I FP (mA) 1.0 10 0.5 100 4.0 10/10 1.3 100/200 12 0.6 RH 10F 0.8 60 –40 to +150 1.0 1.0 10 0.5 100 4.0 10/10 1.3 100/200 15 0.44 RH 2F

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

FMQG5GS

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 800 1000 1300 1500 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A)

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMQG5FM

Abstract: FMQ-G1FS FMUG2F fmqg5g fmqg2f ES01F EU02 fmqg5f FMPG5H FMQ-G5FM
Contextual Info: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5 10/10

FMQ-G1FS

Abstract: FMP G2FS G2GS RU4DS
Contextual Info: I F AV (A) Part Number 50Hz IR (µA) Tstg (°C) VF (V) max IF (A) IR (H) (mA) VR = VRM VR = VRM max max t rr Ta (°C) 2 : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point) : I F / I R (=2 I F) 75% Recovery Point (ex. I F / I R =100mA/200mA 75% Recovery Point)

FMPG2F

Abstract: FMQ-G1FS FMP-G2FS FMP G2FS G5FS AS01 ES01 ES01A ES01F ES01Z
Contextual Info: –40 to +150 1.0 1.0 10 500 100 4 100/200 12 0.6 RU 4D 50 –40 to +150 1.8 1.5 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 RU 4DS 1.5 2.5 50 –40 to +150 1.8 3.0 50 500 100 0.4 500/500 0.18 500/1000 8 1.2 ES01F 0.5 20 –40 to +150 2.0 0.5 10 200 100 1.5

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM (A) Tj (°C) 50Hz Single Half Sine Wave T stg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)

FMUG16

Abstract: RY3A
Contextual Info: 4-2 Fast Recovery Diodes VRM V 600 IF (AV) (A) Package Axial Values in parentheses are for the products with heatsinks (Body Diameter/Lead Diameter) Part Number IFSM Tj (A) (°C) 50Hz Single Half Sine Wave Tstg (°C) VF (V) max IF (A) IR IR(H) (µA) (µA)