FL23SBQS Search Results

5360-J

Abstract: 5360-K lg diode C 5360 LYS360-H LG 42 t 5360-FJ 5360-DG 5360 5360E
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • fl23SbQS 0DS7131 T m i l SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG 5360 5360 5360 5360 T 1 3/4 5 m m LED LAMP Package Dimensions mm A p p ro x w e ig h t 0 ,3 5 g FEATURES * High Light Output * Diffused Lens * Wide Viewing Angie 70°

transistor BC 153

Abstract: TRANSISTOR BC 141 BCY41 BC transistor series transistor BC SERIES TRANSISTOR BC140 transistor BC 310 bc 103 transistor transistor bc 103 transistor C719
Contextual Info: ESC D • fl23SbQS 0004104 2 « S I E G . NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3c 140 BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case 5 C 3 OIN 41873 . The collector is electrically connected to the case. The transistors are intended for use in AF

BF410C

Abstract: a5175
Contextual Info: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

C67078-A1609-A3

Abstract: 0014fl3b kds 9a
Contextual Info: ÔÛD D • 88D fl23SbQS QQ14Ô34 1 m Z I E G 14 834 D BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage Vos » 5A Continuous drain current ¡0 Drain-source on-reslstance ^DS on = 1,5 £2 Description

siemens LFL 1 635

Abstract: siemens LFL 635 5360-HL 5360-H 5360-K 5360-G
Contextual Info: SIEMENS AKTIENGESEL LSCH AF 47E D • fl23SbQS 0DS7131 T « S I E G SIEM EN S re d SUPER-RED YELLOW GREEN LR LS LY LG T=-4\>Z\ 5360 5360 5360 5360 LED Lamps 1VU 5 mm LED LAMP FEATURES * High Light Output * Diffused Lens • Wide Viewing Angle 70° • With Standoffs

buz 90 af

Contextual Info: ÖÖD D • 88D fl23SbQS 0014034 1 ■ S I E ß 14834 D T ’' ?>Ct '~ ! 3 BUZ 88 A SIEMENS AKTIEN6ESELLSCHAF _ Main ratings N-Channel = 800 V Draln-source voltage KlS » 5A Continuous drain current 1D Drain-source on-resistance ^DS on = 1,5 £2

TRANSISTOR T 410

Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Contextual Info: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

SIEMENS BST

Abstract: A712S siemens 230 96 SIEMENS BST P smd 42t MAS 10 RCD SIEMENS BST h 05 60 SIEMENS BST g 02 60 HPC16 SIEMENS BST N 35
Contextual Info: SIEM ENS 4M x 16-Bit Dynamic RAM HYB 3164165AT L -40/-50/-60 (8k, 4k & 2k-Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 P re lim in ary Info rm ation • 4 194 304 words by 16-bit organization • 0 to 70 ”C operating temperature

Contextual Info: SIEM ENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Versions for 12 MHz and 16 MHz operating frequency

MARKING CODE SMD JW

Abstract: TXC CXO A51AC isdn modem 2S34 chmn m1p7 SAB-R3000
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E D • ô53St.0S QQBbbSa Ô m S l E ú SAB 82532 1 INTRODUCTION The Enhanced Serial Communication Controller ESCC2 SAB 82532 is a data communication device with two symmetrical serial channels. It has been designed to implement high-speed com­

Contextual Info: ESC D • fl23SbOS 000MS21 7 « S I E G NPN Silicon RF Transistor SIEMENS AKTIENGESELLSCHAF : l T '2 f - / 7 BF 562 , ° BF 562 is an NPN silicon RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly suitable for controllable VHF input stages in TV tuners.

sda 5241

Abstract: SDA5241 s0003
Contextual Info: SIEM ENS Data Slicer for Teletext SDA 5231-5 Preliminary Data Bipolar IC Features • Crystal-stable data clock regeneration for a bit rate Of 6.9375 MHz • Separation and regeneration of teletext information • Separation of the horizontal and vertical synchroni­

buz 90 af

Contextual Info: ÖÖD D • ÔSBSbQS 0014ä2fl b m s i E G 880 14828 D BUZ 88 ' T ~ 3 Cf ~ / 3 S I E M E N S A K T I E N G E S E L L S C H A F -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case «>s I0 = 800 V

MIL-D-87157

Abstract: MSD2010 MSD2011 MSD2012 MIL-STD-750 2072 Appnote44 MIL-STD-883-method 2016
Contextual Info: SIEMENS AKTIENGESELLSCHAF S IE M E N S 47E D fl23SbGS D02b'ltlfl 3 SIEG MSD2010TXV/TXVB YELLOW MSD2011TXV/TXVB h ig h e ff . r e d MSD2012TXV/TXVB HIGH EFF. GREEN MSD2013TXV/TXVB red .150" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display

Q62702-F395

Abstract: bf363 Q62702-F396 BF 362 BF362
Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 for UHF TV tuners BF 362 and BF 363 are NPN silicon planar RF transistors in a plastic package similarto T 0 119 (50 B3 DIN 41867 . BF 362 is particularly suitable for gain-controlled input stages, and

BUZ28

Abstract: C67078-A1608-A2
Contextual Info: öflD D • 88D flS3 5 b Q 5 D014S34 □ « S I E G 14534 D 7~ . U BUZ 28 SIEMENS A K T I E N GE SE LL SCH AF _ Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description C ase a 100 V l^DS

4015 IC circuit diagram

Abstract: 804 1NL SIEMENS capacitor uv Y6960 arm8
Contextual Info: SIEMENS DSR QPSK-Demodulator SDA6310 Prelim inary Data Features • • • • • • • • Internal reference voltage source. Autom atic gain control AGC with integrated AG C amplifier. O utput for adjustable delayed tuner AGC. O scillator circuitry M r VCO with external varicaps.

Transistor BFT 44

Abstract: transistor tt 2078 TRANSISTOR 2SC 458 Transistor B C 458 transistor npn d 2078 B-01 BFT12 Q62702-F390 gp 823 Q0047
Contextual Info: 1 - ’ asc D • ö23SbOS G004701 R « S I E G u‘ N PN Silicon RF Broadband Transistor BFT 12 SIEMENS AKTIENfiESELLSCHAF . D — 1 BFT 12 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 1 1 9 50 B 3 DIN 41 867 , intended for universal application in amplifiers up to the

Contextual Info: SIEMENS BUZ 90 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds BUZ 90 600 V 4.5 A ^bS on Package Ordering Code 1 .6 Q TO-220 AB C67078-S1321-A2 Maxim um Ratings Parameter Symbol Continuous drain current fc = = b

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1600GS-50/-60 HYM 72V1610GS-50/-60 Preliminary Information • 16 777 216 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)

BUZ100

Contextual Info: SIEMENS BUZ 100L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Ultra low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type Vbs BUZ100L 50 V 4j 60 A

Transistor 2SC 2166

Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Contextual Info: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.

MSC SDA

Abstract: SDA9092 DS011 DD011
Contextual Info: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory

Contextual Info: SIEMENS HITFET BTS949 Smart Lowside Power Switch Product Summary Features • Logic Level Input Continuous drain source voltage • Input protection ESD On-state resistance • Thermal shutdown Current limitation • Overload protection Load current (ISO)