FK18SM Search Results

FK18SM-12

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 T O <t>3.2 5.45 0.6 4 Q w r V d s s .60 0 V rDS ON (MAX). 0.54Î2

Contextual Info: FK18SM-9 High-Speed Switching Use Nch Power MOS FET REJ03G1391-0200 Previous: MEJ02G0223-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 450 V rDS (ON) (max) : 0.41 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r ' V d s s . . 450V

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2

Contextual Info: FK18SM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1393-0200 Previous: MEJ02G0244-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 600 V rDS (ON) (max) : 0.54 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

5218a

Contextual Info: MITSUBISHI Neh POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm .4.5 15.9MAX. 1.5 20.0 4' \ Of k2 0 3.2 W W 4 •’ v ^ h r " ¡[K s in - , 1 0.6 j 5.45 , _ . 4 . SAS jiJ_.'l fm . I M'i ■i. G AT E 2 D R A IN

FK18SM-12

Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 600V

FK18SM-10

Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 500V

FK18SM-9

Abstract: 002 545 18 05
Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 450V

Contextual Info: FK18SM-10 High-Speed Switching Use Nch Power MOS FET REJ03G1392-0200 Previous: MEJ02G0233-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 500 V rDS (ON) (max) : 0.50 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: FK18SM-12 High-Speed Switching Use Nch Power MOS FET REJ03G1393-0200 Previous: MEJ02G0244-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 600 V rDS (ON) (max) : 0.54 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-12 | I S HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm , 15.9MAX. ,4-5 1-5 o! tri ^ è 3.2 kf m 1.0 5.45 • VDSS .600V

FK10KM

Contextual Info: IB U ILT-IN HIGH SPEED DIODE POWER MOSFET FK SERIES CONTINUED Max. ratings Type No. FKIOUM-9 FKtOVS-9 FK10KM-9 FKIOSM-9 FK14UM-9 FK14VS-9 FK14KM-9 FK14SM-9 FK18SM-9 FK20SM-9 FKI0UM-10 FK10VS-10 FKI0KM-10 FK10SM-10 FK14UM-I0 FK14VS-10 FKI4KM-I0 FK14SM-10

Contextual Info: FK18SM-10 High-Speed Switching Use Nch Power MOS FET REJ03G1392-0200 Previous: MEJ02G0233-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 500 V rDS (ON) (max) : 0.50 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

fk18sm

Contextual Info: FK18SM-9 High-Speed Switching Use Nch Power MOS FET REJ03G1391-0200 Previous: MEJ02G0223-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 450 V rDS (ON) (max) : 0.41 Ω ID : 18 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A

7272

Abstract: FK18SM-12 QJS0660001 MOSFET "CURRENT source" power mosfet 600v 600A
Contextual Info: QJS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 724 925-7272 Single FK Series Mosfet Hermetic Module 600 Amperes/600 Volts Description: Powerex Mosfet Hermetic modules are designed for use in switching applications. All components are located in a hermetically sealed

Contextual Info: m UBEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt Form Ddtd Selector Guide Discrete MOSFET - Medium Voltage (continued) FK Series MOSFETs (250 ~ 600V) Fast Recovery Diode (trr = 150nS) Maximum Ratings, Tc = 25°C

circuit diagram of UPS

Abstract: UPS circuit diagram CIRCUIT DIAGRAM UPS 0.5 kva inverter circuit diagram FK25SM-6 UPS design Guide CIRCUIT DIAGRAM
Contextual Info: mtVEREX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ApplÌCdtÌOfl Selector Guide Inverter Applications - UPS and Motor Control Inverter applications generally require a fast recovery free-wheel diode in anti-parallel with the

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FK18SM-9

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5