BCR08 Search Results

BCR08PN

Abstract: VPS05604
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BCR08AM-12A Triac Low Power Use REJ03G0343-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT RMS : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 3 13 1. T1 Terminal

BCR08AM-14A

Contextual Info: BCR08AM-14A Triac Low Power Use REJ03G1200-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT RMS : 0.8 A VDRM : 700 V IFGT I, IRGT I, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal

BCR08AM-14

Abstract: mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING Dimensions in mm φ 5.0 MAX. VOLTAGE CLASS TYPE NAME ➁ ➂ 12.5 MIN. ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7

washing machine electric circuit

Abstract: washing machine circuit BCR08AM-14
Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 OUTLINE DRAWING Dimensions in mm φ 5.0 MAX. VOLTAGE CLASS TYPE NAME ➁ ➂ 12.5 MIN. ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ GATE TERMINAL CIRCUMSCRIBE CIRCLE φ 0.7

BCR08AM-14

Abstract: BCR08AM-14A BCR08AM-14A-A6 BCR08AM RENESAS BCR08AM-14A-TB PRSS0003EA-A SC-43A
Contextual Info: BCR08AM-14 Triac Low Power Use REJ03G1200-0100 Rev.1.00 Apr.29,2005 Features • • • • IT RMS : 0.8 A VDRM : 700 V IFGT I, IRGT I, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal

BCR08AM-14A

Contextual Info: BCR08AM-14A Triac Low Power Use REJ03G1200-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT RMS : 0.8 A VDRM : 700 V IFGT I, IRGT I, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal

Contextual Info: BCR08AM-12A Triac Low Power Use REJ03G0343-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT RMS : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 3 13 1. T1 Terminal

BCR08AM

Abstract: triac 600v. 1a. to 92 triac c mitsubishi triac
Contextual Info: <TRIAC <TRIAC > > MITSUBISHI MITSUBISHI SEMICONDUCTOR SEMICONDUCTOR BCR08AM BCR08AM LOW LOW POWER POWER USE USE PLANAR PLANAR PASSIVATION PASSIVATION TYPE TYPE BCR08AM OUTLINE DRAWING Dimensions in mm VOLTAGE CLASS TYPE NAME ➁ 12.5 MIN. ➂ ➀ T1 TERMINAL

BCR08AS-8

Contextual Info: MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 3 3.9±0.3 2 2.5±0.1 0.8 MIN 1 1.5±0.1 0.5±0.07 0.4 +0.03 –0.05 0.4±0.07 1.5±0.1 1.5±0.1

Contextual Info: Preliminary Datasheet BCR08ES-14A 700V - 0.8A - Triac R07DS0971EJ0001 Rev.0.01 Nov 28, 2012 Low Power Use Features •     IT RMS : 0.8 A  VDRM : 700 V  IFGTI, IRGTI, IRGTIII : 5 mA or 10mA  mode trigger is available (#B11, #B12) Non-Insulated Type

BCR08PN

Abstract: BCR108S E6327 VPS05604 marking code w1s
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)

Contextual Info: BCR08AS-12A Triac Low Power Use REJ03G0292-0400 Rev.4.00 Dec 10, 2008 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A

REJ03G0292-0100

Abstract: BCR08AS-12A BCR08AS-12 BCR08AS-12A-T13
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features • • • • • Non-Insulated Type • Planar Passivation Type IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGTⅢ : 5 mA IFGTⅢ : 10 mA Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3.

Contextual Info: Preliminary Datasheet BCR08AS-12A R07DS0134EJ0500 Previous: REJ03G0292-0400 Rev.5.00 Sep 15, 2010 Triac Low Power Use Features •        IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT III : 10 mA Non-Insulated Type

washing machine electric circuit drawing

Abstract: BCR08AM-14 vending machine drawing BCR08 mitsubishi triac
Contextual Info: MITSUBISHI SEMICONDUCTOR TRIAC BCR08AM-14 LOW POWER USE PLANAR PASSIVATION TYPE BCR08AM-14 ♦ • It (r m s ) . . 0 .8A • V d r m . . 7 0 0 V

Contextual Info: Preliminary Datasheet BCR08DS-14A R07DS0258EJ0100 Rev.1.00 Mar 30, 2011 Triac Low Power Use Features • Planar Passivation Type  Surface Mounted Type  Completed Pb Free  IT RMS : 0.8 A  VDRM :700 V  IFGTI, IRGTI, IRGTIII : 5 mA Outline RENESAS Package code: PRSP0004ZA-A

REJ03G0292-0200

Abstract: BCR08AS-12 BCR08AS-12A-T14 PLZZ0004CA-A hybrid ic sc ka BCR08AS
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A

Contextual Info: Preliminary Datasheet BCR08DS-14A R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 700V-0.8A-Triac Low Power Use Features • • • • • Planar Passivation Type • Surface Mounted Type • Completed Pb Free IT RMS : 0.8 A VDRM :700 V IFGTI, IRGTI, IRGTIII : 5 mA or 10mA

Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)

Contextual Info: BCR08AM-12A Triac Low Power Use REJ03G0343-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT RMS : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 3 13 1. T1 Terminal

triac conduction angle control ic

Abstract: BCR08AS-8 mitsubishi triac
Contextual Info: M ITSU B ISH I S E M IC O N D U C T O R TR IA C BCR08AS-8 LO W PO W ER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.5±0.1 1 . 6 ± 0.2 í I r 0.5±0.07 I 0.4±0.07 _-•J"1_l_ L— _ I“ 1.5±0.1 1.5±0.1

infineon marking W1s

Abstract: BCR08PN BCR108S marking code w1s
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=2.2 kΩ, R2=47 kΩ)