Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FIGURE35 Search Results

    FIGURE35 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tc9800

    Contextual Info: 3. N o t e s o n D e s i g n i n g a n d H a n d l in g C ir c u it s 3.1 Electrostatic D ischarge CMOS ICs have a very thin gate insulation oxide film. W hen a high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate som etimes


    OCR Scan
    tc9800200pf PDF

    ba1s

    Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original
    is43lr32400e32bitsfigure3890ball+4-25oc4mx32is43lr32400e-6bleba1s PDF

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr16640a16bits16-bit-40oc+764mx16is43lr16640a-5bliis43lr16640a-6bli60-ballis43lr16640ais46lr16640a-5bla1is43lr16640a-6bl PDF

    Contextual Info: ANALOG ÜFVICFS INC ANALOG DEVICES SIE D DfllbflGO Ü D 3 7 0 M M '- 7 1 - H - 374 • ANA l Precision Instrumentation Amplifier FEATURES Low Noise: 0 .3 | jlV p-p 0.1 Hz to 10Hz Low Nonlinearity: 0.003% G = 1 High CMRR: 120dB (G = 1000) Low Offset Voltage: 50|iV


    OCR Scan
    120db25mhzmil-std-883b16-pin+320-terminaleia-481aad7524 PDF

    Contextual Info: Dual Output Non-Synchronous Buck Controller with Sync Function and Second Channel Enable Features D escription The CS-5127 is a fixed frequency d u al o u tp u t non-synchronous buck controller. It contains circuitry for regulating tw o separate outputs. Each o u tp u t channel contains a


    OCR Scan
    cs-5127100macs-5127dw16cs-5127dwr16 PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM
    Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr32640a32bits32-bitis43lr32640a-6bli+690-ball-40oc64mx32is46lr32640a-5bla146lr32640amobile ddr sdram PDF

    CA3140S

    Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
    Contextual Info: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)


    OCR Scan
    ca3140200ns/dlv50mv/div200ns/div+1350mwdh/140khztektronix7a13rgure35ca3140stransistor equivalent tt 2142harris ca3140aediagram transistor tt 2140ca3140etransistor tt 2140pin diagram of ic ca3140ca3130 peak detectorca3140ae PDF

    Contextual Info: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays


    Original
    idt82v2082772khztbr12/1382v2082 PDF

    SPWM IC

    Abstract: w78e65 spwm SM5694 A31h BRM-1 syncmossm5964 SM5964 SM59XX P89C51RD2
    Contextual Info: PWM/SPWM APN 新茂國際科技股份有限公司 For SM59XX/89XXA SyncMOS SM5964 & Winbond W78E65 & Philips P89C51RD2 SyncMOS Technologies Inc. PWM 之差異 1.腳位定義及 SFR 設定: 1. Pin 腳的位置及名稱 IC Pin 腳位置 P1.3 CH_0 P1.4(CH_1)


    Original
    sm59xx/89xxasm5964w78e65p89c51rd2+7spwm icspwmsm5694a31hbrm-1syncmossm5964sm59xx PDF

    IST13

    Contextual Info: CR16MNS5, CR16MFS5, and CR16MPS5 are Obsolete Devices CR16MES5,CR16MES9,CR16MFS5,CR16MFS9, CR16MHS5,CR16MHS9,CR16MNS5,CR16MNS9, CR16MPS5,CR16MUS5,CR16MUS9 6MPS5/CR16MUS5/CR16MUS9 Family of CompactRISC 16-Bit Microcontrollers


    Original
    cr16mns5cr16mfs5cr16mps5cr16mes5+5cr16mes9cr16mfs9cr16mhs5cr16mhs9ist13 PDF

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr16640a16bits16-bitis43lr16640a-5bl+6is43lr16640a-6bl60-ball-40oc64mx1646lr16640amobile ddr sdram PDF

    46LR32640A

    Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
    Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr32640a32bits32-bitis43lr32640a-5bl+10is43lr32640a-6bl90-ball-40oc64mx3246lr32640amobile ddr sdramis43lr32640a-5bliis46lr32640a-5bla164mx32 mobile ddr sdramis43lr32640a PDF

    46LR16320C

    Abstract: Mobile DDR SDRAM
    Contextual Info: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr16320c16bits16-bit-40oc+632mx16is43lr16320c-5bliis43lr16320c-6bli60-ball46lr16320cmobile ddr sdram PDF

    446H

    Abstract: 451H RDN11 GR-253-CORE GR-499-CORE IDT82P2821 640-Pin
    Contextual Info: 21 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2821 Version 3 February 6, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.


    Original
    idt82p2821640-pinbh640bhg640+682p2821446h451hrdn11gr-253-coregr-499-core PDF

    ILI9325DS_V0.43

    Abstract: ILI9325 BIT 3195 G G184 BIT+3195+G ILI9325D
    Contextual Info: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.43 Document No.: ILI9325DS_V0.43.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096


    Original
    ili9325240rgbx320ili9325dsili9325ds_v0.43+4bit 3195 gg184bit+3195+gili9325d PDF

    Contextual Info: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original
    is43/46lr32200b32bits32-bitis43lr32200b-6bli+390-ball-40oc2mx32 PDF

    Contextual Info: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original
    s43lr16200c16bitsis43lr16200c2mx16+3is43lr16200c-6bl60-ballis43lr16200c-6bli PDF

    Contextual Info: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original
    is43/46lr32800f32bits32-bitis43lr32800f-6bli+490-ball-40oc8mx32is46lr32800f-6bla1 PDF

    DS5202

    Abstract: 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202 EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm
    Contextual Info: 芯美电子 EUA5202 2-W Stereo Audio Power Amplifier with Mute DESCRIPTION FEATURES z The EUA5202 is a stereo audio power amplifier that delivering 2W of continuous RMS power per channel into 3-Ω loads. When driving 1W into 8-Ω speakers, the EUA5202 has less than 0.04% THD+N across its


    Original
    eua5202800mw/chtssop-24mo-153+9ds52023.5mm stereo headphone jack 8ohm 0.5w speakerseua5202qit115w 50 ohm resistorseua5202qir0eua5202qir1figure37eua marking codespeaker - 0.5w 8ohm PDF

    Contextual Info: OCTAL T1/E1 SHORT HAUL LINE INTERFACE UNIT IDT82V2048 FEATURES ! ! ! ! ! ! ! ! Fully integrated octal T1/E1 short haul line interface which supports 100 Ω T1 twisted pair, 120 Ω E1 twisted pair and 75 Ω E1 coaxial applications Selectable Single Rail mode or Dual Rail mode and AMI or


    Original
    idt82v2048ctr12/cha/2002 PDF

    K411

    Contextual Info: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version 1 December 7, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.


    Original
    idt82p2816inf816416-pinbb416+3bbg41682p2816k411 PDF

    82p2816

    Abstract: 15Dh motorola
    Contextual Info: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version August 26, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2005 Integrated Device Technology, Inc.


    Original
    idt82p2816416-pinbb416bbg416+282p281615dh motorola PDF

    Contextual Info: QUAD T1/E1/J1 LONG HAUL/SHORT HAUL LINE INTERFACE UNIT ADVANCE INFORMATION IDT82V2084 FEATURES: • • • • • • • Four channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays


    Original
    idt82v2084772khzpk12882v2084 PDF

    IDT82V2082

    Abstract: TQFP80 I.431 T1 diode Chip rail 6229
    Contextual Info: ADVANCE INFORMATION DUAL CHANNEL T1/E1/J1 LONG IDT82V2082 HAUL/SHORT HAUL LINE INTERFACE UNIT FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection


    Original
    idt82v2082772khztbr12/13tqfp80+2i.431 t1 diodechip rail 6229 PDF