FIGURE34 Search Results

tc9800

Contextual Info: 3. N o t e s o n D e s i g n i n g a n d H a n d l in g C ir c u it s 3.1 Electrostatic D ischarge CMOS ICs have a very thin gate insulation oxide film. W hen a high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate som etimes

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

MC4990

Abstract: 3000 Watt BTL Audio Amplifier MO-187 MO-229 8l marking sd-5 Class AB Audio Power Amplifier CLASS D AUDIO AMPLIFIER 600 ohm
Contextual Info: MC4990 1.25 W Mono Class AB Audio Power Amplifier General Description Features The MC4990 is an audio power amplifier essentially designed for mobile phones and other portable communication devices. It can deliver 1.25 watts of continuous average power to an 8 Ohm BTL load and 2 watts of continuous

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where

tmp47c007e

Abstract: TMP47C1670N
Contextual Info: T O SH IB A TMP47C1270/1670 UNDERDEVELOPMENT CMOS 4-BIT MICROCONTROLLER TMP47C1270N, TMP47C1670N The 47C1270/1670 are the high speed and high performance 4-bit single chip microcomputer with large capacity ROM and RAM, based on the 47C670/870 TLCS-470 series .

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

R1010B

Abstract: la 5531
Contextual Info: TO SH IB A TMP47C655/855 CMOS 4-Bit Microcontroller TMP47C655F, TMP47C855F The TMP47C655/855 are a high speed and high performance 4-bit single chip microcomputer based on the TLCS-470 CMOS series. The TMP47C655/855 have LCD driver, DTMF generator and large-capacity RAM for

Contextual Info: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays

IST13

Contextual Info: CR16MNS5, CR16MFS5, and CR16MPS5 are Obsolete Devices CR16MES5,CR16MES9,CR16MFS5,CR16MFS9, CR16MHS5,CR16MHS9,CR16MNS5,CR16MNS9, CR16MPS5,CR16MUS5,CR16MUS9 6MPS5/CR16MUS5/CR16MUS9 Family of CompactRISC 16-Bit Microcontrollers

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where

46LR16640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR32640A

Abstract: Mobile DDR SDRAM IS43LR32640A-5BLI IS46LR32640A-5BLA1 64Mx32 Mobile DDR SDRAM IS43LR32640A
Contextual Info: IS43/46LR32640A Advanced Information 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

46LR16320C

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

BF484

Abstract: IDT82P20516 transformer e19 GR-253-CORE GR-499-CORE 82P20516 chn 347
Contextual Info: 16-Channel Short Haul E1 Line Interface Unit IDT82P20516 Version December 17, 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

diode t29

Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Contextual Info: PRELIMINARY DATA SHEET 288M bits Direct Rambus  DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including

ILI9325DS_V0.43

Abstract: ILI9325 BIT 3195 G G184 BIT+3195+G ILI9325D
Contextual Info: ILI9325 a-Si TFT LCD Single Chip Driver 240RGBx320 Resolution and 262K color Datasheet Version: V0.43 Document No.: ILI9325DS_V0.43.pdf ILI TECHNOLOGY CORP. 4F, No. 2, Tech. 5th Rd., Hsinchu Science Park, Taiwan 300, R.O.C. Tel.886-3-5670095; Fax.886-3-5670096

da48

Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a

Contextual Info: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N

Contextual Info: IS43/46LR32800F 2M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32800F is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

DS5202

Abstract: 3.5mm stereo headphone jack 8ohm 0.5W speakers EUA5202 EUA5202QIT1 15W 50 Ohm Resistors EUA5202QIR0 EUA5202QIR1 Figure37 EUA MARKING CODE Speaker - 0.5W 8Ohm
Contextual Info: 芯美电子 EUA5202 2-W Stereo Audio Power Amplifier with Mute DESCRIPTION FEATURES z The EUA5202 is a stereo audio power amplifier that delivering 2W of continuous RMS power per channel into 3-Ω loads. When driving 1W into 8-Ω speakers, the EUA5202 has less than 0.04% THD+N across its

Contextual Info: OCTAL T1/E1 SHORT HAUL LINE INTERFACE UNIT IDT82V2048 FEATURES ! ! ! ! ! ! ! ! Fully integrated octal T1/E1 short haul line interface which supports 100 Ω T1 twisted pair, 120 Ω E1 twisted pair and 75 Ω E1 coaxial applications Selectable Single Rail mode or Dual Rail mode and AMI or

K411

Contextual Info: 16 +1 Channel High-Density T1/E1/J1 Line Interface Unit IDT82P2816 Version 1 December 7, 2005 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 1-800-345-7015 or 408-284-8200• TWX: 910-338-2070 • FAX: 408-284-2775 Printed in U.S.A.