FIGURE17 Search Results

TRANSISTOR mcr 100-8

Contextual Info: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

TSC 7106 cpl

Abstract: TSC7660 TSC7106 tsc 7106 tsc 7107 cpl ic 7106 cpl 7107A tsc7107 TSC7106A Tsc7107A
Contextual Info: 3bE D TELEDYNE COMPONENTS ÖS17bü2 G0Ü7ÜMM b « T S C -T 5 M O -O S WTELEDYNE COMPONENTS TC7106/7106A TC7107/7107A 3-1/2 DIGIT A/D CONVERTER FEATURES True Polarity Indication for Precision Null Applications Convenient 9 V Battery Operation TC7106A High Impedance CMOS Differential Inputs .1012il

QRT-38-40

Abstract: COUNTER LED bcd TC831
Contextual Info: le lu o m Semiconductor, Inc. TC831 3-3/4 DIGIT A/D CONVERTER WITH AUTO-RANGING FREQUENCY COUNTER FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3 -3/4 Digit, M ultiple-F un ctio n M easu rem en t System — A n alo g-to-D igital C o nverter — Frequency C o un ter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HFBR-2522

Contextual Info: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

MP-25

Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

ELITE FLASH STORAGE TECHNOLOGY INC

Abstract: BPL TV soic-8 200mil
Contextual Info: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory FEATURES Single supply voltage 2.7~3.6V Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz Auto Address Increment (AAI) WORD Programming - Decrease total chip programming time over

Contextual Info: ESMT F25L004A 4Mbit 512Kx8 3V Only Serial Flash Memory „ FEATURES - Block erase time 1sec (typical) - Sector erase time 90ms(typical) y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 75MHz; 100MHz

TQFN-32

Abstract: fp6793 DSASW0017863 32-pin MO-220 5x5 Thin-film magnetic resistance Use High-Voltage Op Amps to Drive Power MOSFETs Linear Technology Voltage Regulator Transconductance current source
Contextual Info: fitipower integrated technology lnc. Preliminary FP6793 TFT-LCD DC-DC Converters with Operational Amplifiers Description Features The FP6793 includes a high performance step-up regulator, two linear regulator controllers, and high current operational amplifiers for active-matrix, thin

LCMXO2-1200HC-4TG100C

Abstract: LCMXO2-256HC-4TG100I LCMXO2-1200 tn1200 lcmxo2 LCMXO2-1200HC-4TG100 LCMXO2-2000 LCMXO2-7000 MachXO2-1200 LCMXO2-4000HC
Contextual Info: MachXO2 Family Handbook HB1010 Version 01.0, November 2010 MachXO2 Family Handbook Table of Contents November 2010 Section I. MachXO2 Family Data Sheet Introduction Features . 1-1

d1409

Abstract: NP40N055CHE NP40N055KHE MP-25 NP40N055DHE NP40N055EHE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055CHE,NP40N055DHE,NP40N055EHE,NP40N055KHE SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

NP32N055HDE

Abstract: NP32N055IDE NP32N055SDE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HDE, NP32N055IDE, NP32N055SDE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications.

NP32N055SHE

Abstract: NP32N055HHE NP32N055IHE d1415
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP32N055HHE, NP32N055IHE, NP32N055SHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION ORDERING INFORMATION These products are N-Channel MOS Field Effect PART NUMBER Transistors designed for high current switching applications.

Contextual Info: Data Sheet No. PD60247 IRS2136D/ IRS21362D/ IRS21363D/ RS21365D/ IRS21366D/ IRS21367D/ IRS21368D J&S PbF 3-PHASE BRIDGE DRIVER Packages Features • • • • • • • • • • • • • • Floating channel designed for bootstrap operation. Fully

46LR32640A

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR32640A 16M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 33,554,432 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

IRS2308

Abstract: IR2308 IRFBC20 IRFBC30 IRFBC40 IRFPE50 IRS2308S
Contextual Info: PRELIMINARY Data Sheet No.PD60266 revA IRS2308 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages immune • Gate drive supply range from 10 V to 20 V

Contextual Info: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,

REG IC 48V IN 12V 10A OUT ic

Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
Contextual Info: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode

Contextual Info: DUAL CHANNEL T1/E1/J1 LONG HAUL/ SHORT HAUL LINE INTERFACE UNIT IDT82V2082 FEATURES: • • • • • • • - Dual channel T1/E1/J1 long haul/short haul line interfaces Supports HPS Hitless Protection Switching for 1+1 protection without external relays

fn612

Abstract: AN557 ISL8484 ISL8484IR ISL8484IRZ ISL8484IU MAX4684 MAX4685 TB363
Contextual Info: ISL8484 Data Sheet May 12, 2008 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPDT Analog Switch The Intersil ISL8484 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw SPDT analog switch designed to operate from a single +1.65V to

samsung u6 data cable

Abstract: EPROM 27512 samsung u2 cable ARM ks32c6100 KS32C6100 29ee512 9pin rs232 SIMM FLASH MEMORY MODULE 72pin 16bit samsung u2 & u6 cable 0x1400000
Contextual Info: KS32C6100 RISC MICROCONTROLLER 17 EVALUATION BOARD EVALUATION BOARD INTRODUCTION KS32C6100 evaluation board is a platform that is suitable for code development and exploration of KS32C6100. It supports various memory devices such as DRAM Normal/EDO , SRAM, EPROM, and Flash. Using the