TG100 Search Results
TG100 Datasheets (13)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TG-100 | Clare | HIGH ENERGY SPARK GAP DEVICES | Original | 198.41KB | 7 | ||
| TG100 | High Energy Devices | TG Two Electrode Legacy Series - Spark Gaps | Original | 244.63KB | 6 | ||
| TG100 | Unknown | Sine Wave Generator | Scan | 171.66KB | 2 | ||
| TG-1000 | Greenlee Textron | Thermometers, Test and Measurement, THERMOMETER INFRARED | Original | 1 | |||
| TG.10.0113 | Taoglas | RF Antennas, RF/IF and RFID, RF ANTENNA | Original | 13 | |||
| TG100160B000G | Amphenol Anytek | Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 10POS 45DEG 5MM PCB | Original | 90.03KB | |||
| TG100160C000G | Amphenol Anytek | Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLOCK 10POS 45DEG 5MM PCB | Original | 105.35KB | |||
JMTG100P03A
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Jiangsu JieJie Microelectronics Co Ltd | P-channel enhancement mode power MOSFET with -30V drain-source voltage, -45A continuous drain current, and RDS(on) less than 9.5mΩ at VGS=-10V, housed in a PDFN5x6-8L package. | Original | ||||
JMTG100N06D
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 50A dual N-channel enhancement mode power MOSFET in PDFN5x6-8L-D package with RDS(ON) less than 12.9mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
JMTG100N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 55A, 8.9mΩ N-channel Power Trench MOSFET in PDFN5x6-8L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. | Original | ||||
JMTG100N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 30A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 9.8m ohm at VGS = 10V, available in PDFN5x6-8L package, suitable for power management and load switching applications. | Original | ||||
JMTG100N04A
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Jiangsu JieJie Microelectronics Co Ltd | 40V, 40A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 10.9m ohm at VGS=10V, available in PDFN5x6-8L package, suitable for load switching, PWM, and power management applications. | Original | ||||
JMTG100C03D
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Jiangsu JieJie Microelectronics Co Ltd | N-Channel and P-Channel enhancement mode MOSFET with 30 V drain-source voltage, 12 A continuous drain current for N-Channel, -10 A for P-Channel, low on-resistance, and PDFN5x6-8L-D package. | Original |
TG100 Price and Stock
Lattice Semiconductor Corporation
Lattice Semiconductor Corporation LCMXO2-2000ZE-1TG100CIC FPGA 79 I/O 100TQFP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LCMXO2-2000ZE-1TG100C | Tray | 514 | 1 |
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Lattice Semiconductor Corporation LCMXO2-1200ZE-1TG100IIC FPGA 79 I/O 100TQFP |
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LCMXO2-1200ZE-1TG100I | Tray | 476 | 1 |
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LCMXO2-1200ZE-1TG100I | 215 |
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LCMXO2-1200ZE-1TG100I | 18 |
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LCMXO2-1200ZE-1TG100I | 10,661 |
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Lattice Semiconductor Corporation LCMXO2-640ZE-2TG100IIC FPGA 78 I/O 100TQFP |
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LCMXO2-640ZE-2TG100I | Tray | 229 | 1 |
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Lattice Semiconductor Corporation LCMXO2-1200HC-6TG100CIC FPGA 79 I/O 100TQFP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LCMXO2-1200HC-6TG100C | Tray | 88 | 1 |
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LCMXO2-1200HC-6TG100C | 221 |
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LCMXO2-1200HC-6TG100C | 12,279 |
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Lattice Semiconductor Corporation LCMXO2-256ZE-1TG100CIC FPGA 55 I/O 100TQFP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LCMXO2-256ZE-1TG100C | Tray | 83 | 1 |
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