FIGURE11 Search Results
FIGURE11 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Low Dropout PositiveContextual Info: 300MA HIGH PSRR LOW DROPOUT CMOS LINEAR REGULATOR FSP2134 FEATURES z z z z z z z z z z z z Low dropout voltage: 180mV at 300mA Vo=3.3V Quiescent current: Typ. 65µA 2% Voltage Accuracy High PSRR: 70dB at 1KHz Thermal Shutdown Current Limiting Excellent line and load regulation |
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300MA FSP2134 180mV 300mA FSP2134 FSP2134XXXX Low Dropout Positive | |
Contextual Info: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory. |
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AZ4580 AZ4580 110dB vol6-21-6485 | |
Contextual Info: Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory. |
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AZ4580 AZ4580 110dB | |
MIMMG150DR120UZAContextual Info: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module |
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MIMMG150DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UZA | |
MIMMG200S060B6ENContextual Info: MIMMG200S060B6EN 600V 200A IGBT Module RoHS Compliant FEATURES □ High short circuit capability,self limiting short circuit current □ VCE sat with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery |
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MIMMG200S060B6EN 25CEV tsc10 Figure10. Figure11. Figure12. MIMMG200S060B6EN | |
MIMMG150DR120UAContextual Info: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module |
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MIMMG150DR120UA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UA | |
MIMMG75SR060UKContextual Info: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module |
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MIMMG75SR060UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR060UK | |
MIMMG200DR120UZAContextual Info: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module |
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MIMMG200DR120UZA Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG200DR120UZA | |
MIMMG40H120XB6TN
Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
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MIMMG40H120XB6TN Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG40H120XB6TN 1 phase igbt 1200V 40A module inverter circuit diagram | |
MIMMG150W120X6TNContextual Info: MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP Trench+Field Stop technology □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery |
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MIMMG150W120X6TN Figure10. Figure11. Figure12. Figure13. MIMMG150W120X6TN | |
MIMMG150DR120UK
Abstract: AC welder circuit diagram
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MIMMG150DR120UK Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG150DR120UK AC welder circuit diagram | |
MIMMG75SR120BContextual Info: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module |
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MIMMG75SR120B Tempera75 Figure12. Figure13. Figure14. Figure15. Figure16. MIMMG75SR120B | |
bridgelux test LM80
Abstract: LM80 bridgelux EN62471 W3500 bridgelux BXRA cfl assembly manufacturing process C5000 C8000 DS16 LM80
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W3500, W5700, N4000, N6300, C5000, C8000 bridgelux test LM80 LM80 bridgelux EN62471 W3500 bridgelux BXRA cfl assembly manufacturing process C5000 C8000 DS16 LM80 | |
ba1sContextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data |
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IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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SAMSUNG NAND Flash Qualification Report
Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
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K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor | |
HFBR-2522Contextual Info: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated |
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5964-40027E AV02-0730EN HFBR-2522 | |
IS43LR16640A
Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
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IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL | |
FSP2130
Abstract: marking code 10 sot23 series connection of linear mosfet
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300MA FSP2130 180mV 300mA OT23-3L FSP2130 marking code 10 sot23 series connection of linear mosfet | |
H10D4890
Abstract: D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890
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D6935 H10D4890 D4850C d480 D4812C w046 H10D4850 H12CA4850 H12CD4850 H12D4850 H12D4890 | |
15w audio amplifier circuit diagram
Abstract: mosfet driver marking he sot23-6 MD4101 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A
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MD4101 MD4101 MO-178. 15w audio amplifier circuit diagram mosfet driver marking he sot23-6 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A | |
5m48h
Abstract: S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128
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HCS12X MC9S12XEP100RMV1 S12XE MC9S12XEP100 MC9S12XE S12XE-Family 5m48h S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128 | |
MP-25
Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
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NP88N055CLE, NP88N055DLE, NP88N055ELE NP88N055CLE O-262 O-220AB NP88N055DLE O-263 O-220AB) MP-25 NP88N055CLE NP88N055DLE NP88N055ELE | |
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4632312A-X 32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD4632312A-X is a high speed, low power, 33,554,432 bits 2,097,152 words by 16 bits CMOS Mobile |
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PD4632312A-X 32M-BIT 16-BIT PD4632312A-X 48-pin I/O15) |