Q62702-P790
Abstract: Bpy 43 Q62702-P784 Q62702-P787 Q62702-P96 Q62702-P98 SFH402 BPY 62
Contextual Info: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Hergestellt im Schmelzepitaxieverfahren
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fet06092fet06091fet06090q62702-p790+7bpy 43q62702-p784q62702-p787q62702-p96q62702-p98sfh402bpy 62
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diode SR 315
Abstract: sfh 482 diode E7800 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 tci 537 Q62703-Q1667
Contextual Info: SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 fet06092 fet06091 fet06090 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 537
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fet06092fet06091fet06090diode sr 315+9sfh 482 diodee7800q62703-q1088q62703-q1089q62703-q1662q62703-q1663q62703-q1664tci 537q62703-q1667
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SFH400
Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPX 38 sfh 400 BPY 62
Contextual Info: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 501 10.95 SFH 400, SFH 401, SFH 402
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fet06092fet06091fet06090sfh400+8q62702-p784q62702-p787q62702-p790q62702-p96q62702-p98bpx 38sfh 400bpy 62
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GET06090
Contextual Info: GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter SFH 460 Preliminary Data 2.7 ø4.8 ø4.6 5.3 5.0 7.4 6.6 1 0.9 .1 ø5.6 ø5.3 glass lens GET06090 fet06090 14.5 12.5 1.1 .9 0 Cathode Chip position 2.54mm spacing ø0.45 Wesentliche Merkmale ● Strahlung im sichtbaren Rotbereich ohne
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get06090fet06090ohr01869ohr01870+3ohr01462ohr01871ohr01888
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SFH 350 V
Abstract: GEO06314 GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091
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get06091fet06091geo06314fet06090+10ohr00395ohr01937sfh 350 vget06013q62702-p784q62702-p786q62702-p787q62702-p790q62702-p96q62702-p98
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GEO06314
Abstract: GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091
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get06091fet06091geo06314fet06090+10ohr01040ohr01937get06013q62702-p784q62702-p786q62702-p787q62702-p790q62702-p96q62702-p98bpy 62
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GEO06314
Abstract: GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665 Q62703-Q1667
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1
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get06091fet06091geo06314fet06090+10ohr00881ohr00948get06013q62703-q1088q62703-q1089q62703-q1662q62703-q1663q62703-q1664q62703-q1665q62703-q1667
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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q62702-a772q62702-a731q62702-a773ot-23+10isl 6251 schematicsmd transistor a4ssiemens ofw 361smd marking b4h6bs smd transistornpn transistors list according to current, voltagtransistors diodes smd a7ha4s smd transistornpn transistor ss100smd transistor 6bs
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diode SR 315
Abstract: GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) welded 14.5 12.5 Chip position (2.7) 5.3 5.0 6.4 5.6 5.5 5.0 1 0.9 .1 ø5.6 ø5.3 GET06091 Radiant sensitive area 1.1 .9 1.1 0.9 ø4.8 ø4.6 ø0.45 glass lens Anode = SFH 481 Cathode = SFH 401
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get06091fet06091fet06090geo06314+9ohr00396diode sr 315get06013q62703-q1088q62703-q1089q62703-q1662q62703-q1663q62703-q1664q62703-q1665
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IR photodetectors
Abstract: diode SR 315 E7800 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1
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get06091fet06091geo06314fet06090+11ohr00881ohr00948ohr00396ir photodetectorsdiode sr 315e7800get06013q62703-q1088q62703-q1089q62703-q1662q62703-q1663
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