FET RV POWER TRANSISTOR X 52 Search Results

VC06AG18120YAT

Abstract: AVX 0603 CHIP RESISTOR VC06AG18120
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Passive filters used in wireless lans

Abstract: AVX 0402 transistor LN 1B
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

VC06AG18120YAT

Abstract: variable resistor varistor documentation ceramic capacitor footprint 0402 dimensions footprint ceramic capacitor footprint 0402
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

VC06AG18120

Abstract: 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the

M-0301

Abstract: TRANSISTOR PNPNPN APPLICATIONS cs5431 simple SL 100 NPN Transistor CS5231-3 MGSF1P02ELT1 NTP10 "network interface cards"
Contextual Info: 500mA, 3.3V Linear Regulator w ith Auxiliary Control D escription The CS5231-3 com bines a threeterm inal linear regu lato r w ith cir­ cuitry to control an external PFET transistor w ith the in ten t of m anag­ ing tw o in p u t supplies. A 5V sup­ p ly pow ers th e regu lato r w hile an

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

TC9192

Abstract: pll motor control fg fv
Contextual Info: TC9192P/F DOUBLE PLL FOR MOTOR CONTROL This is a LSI designed for motor-controlling the copying machine of which motor-rotation speed is necessary to be varied freely. With built-in PLL and VCO for reference signal generation, reference frequency can voluntarily be varied externally.

96b1

Contextual Info: run JL PRELIMINARY » . 9 .1 2 Step-down DC/DC Converter with Voltage Detector R 1 2 2 1 N S e r ie s • OUTLINE The R1221N Series are PWM step-down DC/DC Converter controllers embedded with a voltage detector, with low supply current by CMOS process. Each step-down DC/DC converter in these ICs consists of an oscillator, a PWM control circuit, a reference

Contextual Info: y i/ iy j x iy i/ i D ual-O utput, S w itch -M o d e R eg u lato r + 5 V to ± 1 2 V o r± 1 5 V _General Description _ Features The MAX742 DC-DC converter is a controller for dual-out­ put power supplies In the 3W to 60W range. Relying on

Contextual Info: - * - - * * » , ' 8811181^^ *- * V v X > ’ » * £ “ - * , - k « , * \ >“ ’* ] * H SLA7024M, SLA7026M. a n d SMA7029 , HIGH-CURRENT PWM UNIPOLAR STEPPER MOTOR CONTROLLER/DRIVERS SMA7029M The SLA7024M, SLA7026M, and SMA7029M are designed for high-efficiency and high-performance operation of 2-phase, unipolar

P1-35 equivalent

Abstract: ceramic capacitor footprint 0402 dimensions AVX VC06AG183R0YA1 variable resistor varistor documentation RS-296 VC04AG183R0YA1 VC06AG18120YA1 VC06AG183R0YA1 ceramic capacitor footprint 0402 dimension VC06AG183R0
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the combination of increased signal “gain” demands, coupled

Contextual Info: fl Stanford Microdevices Product Description SSW-524 Stanford M icrodevices’ SSW -524 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable 8-pin ceram ic package. DC-8 GHz GaAs MMIC SPST Switch

Contextual Info: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z

nichicon capacitors gq

Contextual Info: Contents Applications. 1 Block Selection G

ir 2248 mosfet n-channel

Contextual Info: jvw\yLwv\ 19-3105; Rev 2; 8/96 Switch-Mode Regulator with + 5 V to ± 1 2 V o r ± 1 5 V D u a l O u t p u t The MAX742 DC-DC converter is a controller for dual-output power supplies in the 3W to 60W range. Relying on simple two-terminal inductors rather than transformers, the

MTD6N10E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD6N10E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Oevlc« TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM N-Channel Enhancement-Mode Silicon Gate

Contextual Info: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability

Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended

Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability

BTS555

Abstract: 650P Q67060-S6953A3
Contextual Info: PROFET Preliminary Data Sheet BTS555 Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Overload protection