FET RV POWER TRANSISTOR X 52 Search Results
FET RV POWER TRANSISTOR X 52 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
FET RV POWER TRANSISTOR X 52 Datasheets Context Search
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VC06AG18120YAT
Abstract: AVX 0603 CHIP RESISTOR VC06AG18120
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300pS 700pS VC06AG18120YAT AVX 0603 CHIP RESISTOR VC06AG18120 | |
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the |
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300pS 700pS | |
Passive filters used in wireless lans
Abstract: AVX 0402 transistor LN 1B
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700pS Passive filters used in wireless lans AVX 0402 transistor LN 1B | |
VC06AG18120YAT
Abstract: variable resistor varistor documentation ceramic capacitor footprint 0402 dimensions footprint ceramic capacitor footprint 0402
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VC06AG18120
Abstract: 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B
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700pS VC06AG18120 0603 3pf capacitor VC06AG18120YAT ceramic capacitor footprint 0402 dimensions Capacitor ceramic 0402 0.2 pf variable resistor varistor documentation Passive filters used in wireless lans 1B SOT23 VC06AG183R0YAT transistor LN 1B | |
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the |
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700pS | |
Contextual Info: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the |
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M-0301
Abstract: TRANSISTOR PNPNPN APPLICATIONS cs5431 simple SL 100 NPN Transistor CS5231-3 MGSF1P02ELT1 NTP10 "network interface cards"
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500mA, CS5231-3 500mA CS5231-3DP5 CS5231-3DPR5 M-0301 TRANSISTOR PNPNPN APPLICATIONS cs5431 simple SL 100 NPN Transistor MGSF1P02ELT1 NTP10 "network interface cards" | |
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface |
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BUK563-100A SQT404 BUK563-100A | |
TC9192
Abstract: pll motor control fg fv
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TC9192P/F TC9192P/T TC9192 pll motor control fg fv | |
96b1Contextual Info: run JL PRELIMINARY » . 9 .1 2 Step-down DC/DC Converter with Voltage Detector R 1 2 2 1 N S e r ie s • OUTLINE The R1221N Series are PWM step-down DC/DC Converter controllers embedded with a voltage detector, with low supply current by CMOS process. Each step-down DC/DC converter in these ICs consists of an oscillator, a PWM control circuit, a reference |
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R1221N R1221N33AA 96b1 | |
Contextual Info: y i/ iy j x iy i/ i D ual-O utput, S w itch -M o d e R eg u lato r + 5 V to ± 1 2 V o r± 1 5 V _General Description _ Features The MAX742 DC-DC converter is a controller for dual-out put power supplies In the 3W to 60W range. Relying on |
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MAX742 AX/42 | |
Contextual Info: - * - - * * » , ' 8811181^^ *- * V v X > ’ » * £ “ - * , - k « , * \ >“ ’* ] * H SLA7024M, SLA7026M. a n d SMA7029 , HIGH-CURRENT PWM UNIPOLAR STEPPER MOTOR CONTROLLER/DRIVERS SMA7029M The SLA7024M, SLA7026M, and SMA7029M are designed for high-efficiency and high-performance operation of 2-phase, unipolar |
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SLA7024M, SLA7026M. SMA7029â SMA7029M SLA7026M, SMA7029M | |
P1-35 equivalent
Abstract: ceramic capacitor footprint 0402 dimensions AVX VC06AG183R0YA1 variable resistor varistor documentation RS-296 VC04AG183R0YA1 VC06AG18120YA1 VC06AG183R0YA1 ceramic capacitor footprint 0402 dimension VC06AG183R0
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Contextual Info: fl Stanford Microdevices Product Description SSW-524 Stanford M icrodevices’ SSW -524 is a high performance Gallium Arsenide Field Effect Transistor M MIC switch housed in a low-cost surface-m ountable 8-pin ceram ic package. DC-8 GHz GaAs MMIC SPST Switch |
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SSW-524 25dBm 28dBm | |
Contextual Info: LITTON IND/LITTON SOLID Litton 5bE D WÊ SS442DD □□□□SED b2T « L I T T Low-Distortion/Medium Power M icrowave GaAs FET Electron Devices D-6828 Preliminary Specifications FEATURES • O utput Power 19 dBm @ 18 GHz ■ 1dB Power Gain 7 dB @ 18 g h z |
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SS442DD D-6828 D-6828 2285C | |
nichicon capacitors gqContextual Info: Contents Applications. 1 Block Selection G |
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ir 2248 mosfet n-channelContextual Info: jvw\yLwv\ 19-3105; Rev 2; 8/96 Switch-Mode Regulator with + 5 V to ± 1 2 V o r ± 1 5 V D u a l O u t p u t The MAX742 DC-DC converter is a controller for dual-output power supplies in the 3W to 60W range. Relying on simple two-terminal inductors rather than transformers, the |
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MAX742 AX742 100kHz 200kHz, ir 2248 mosfet n-channel | |
MTD6N10EContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD6N10E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Oevlc« TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM N-Channel Enhancement-Mode Silicon Gate |
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0E-05 0E-04 0E-01 MTD6N10E | |
Contextual Info: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability |
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FHX13X, FHX14X FHX13) FHX14X 2-18G FCSI0598M200 | |
Contextual Info: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended |
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FHX35X FHX35X 2-18G FCSI0598M200 | |
Contextual Info: FHX45X - GaAs FET & HEMT Chips FEATURES • Low Noise Figure: 0.55dB Typ. @f=12GHz • High Associated Gain: 12.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability |
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FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 | |
Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability |
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FHR20X 18GHz FHR20X 2-30GHz FCSI0598M200 | |
BTS555
Abstract: 650P Q67060-S6953A3
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BTS555 systems25) 1998-Dec-21 BTS555 650P Q67060-S6953A3 |