FET RF 2001 Search Results

NE5520379A

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5500179A

Abstract: ldmos nec
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

nec 1678

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5510179A

Abstract: NE5510179A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

NE5510279A

Abstract: NE5510279A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5510379A

Abstract: NE5510379A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

MRF255 equivalent

Abstract: electrolytic capacitor 470 mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

MRF255 equivalent

Abstract: mrf255
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

an power amplifier 108 mhz

Contextual Info: Miniline Enhanced VAx-Types Push Pull GaAs FET Amplifiers Application The VAx amplifiers with GaAs FET technology are designed to operate as the last active device in broadband RF networks. . APPLICATIONS • Last active device in an interactive broadband networks

DCS1800

Abstract: NE5520279A NE5520279A-T1 NE5520279A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

NE552R679A

Abstract: NE552R679A-T1 NE552R679A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2

7530D

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

PU10123EJ01V1DS

Abstract: R-4775
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

NE552R479A-T1A

Abstract: VP215 GSM1900 NE552R479A NE552R479A-T1 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

ne552r

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R679A 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS Family Radio Service . Dies are manufactured using our NEWMOS2

2SC2812

Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,

Contextual Info: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85

1SV70

Abstract: TBB1005 TBB1005EMTL-E
Contextual Info: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

smd code marking BM

Abstract: RG 56 smd diode marking BM 1SV70 TBB1002 TBB1002BMTL-E
Contextual Info: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

1SV70

Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
Contextual Info: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

MARKING CODE SMD IC g1

Abstract: SMD MARKING CODE sg 1SV70 TBB1005 SMD MARKING CODE hitachi DSA003645
Contextual Info: TBB1005 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-989F Z Preliminary 7th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.

SMD MARKING CODE hitachi

Abstract: 1SV70 TBB1004 HITACHI RF EDITION marking code g1s MARKING CODE SMD IC g1 DSA003645 marking code g2s
Contextual Info: TBB1004 Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-988H Z 9th. Edition Dec. 2000 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.