NE5510379A Search Results

NE5510379A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE5510379A		NEC	4.8 V OPERATION SILICON RF POWER LD-MOS FET	Original	PDF	59.34KB	8
NE5510379A-T1		NEC	4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIER	Original	PDF	59.33KB	8

NE5510379A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NE5510379A Abstract: NE5510379A-T1 Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier	Original	NE5510379A NE5510379A NE5510379A-T1	PDF

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NE5510379A

Abstract: NE5510379A-T1
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510379A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 3 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

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NE5510379A NE5510379A NE5510379A-T1

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