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PU10123EJ01V1DS Abstract: R-4775 Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology	Original	NE5520279A NE5520279A DCS1800 PU10123EJ01V1DS R-4775	PDF

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PU10123EJ01V1DS

Abstract: R-4775
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

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NE5520279A NE5520279A DCS1800 PU10123EJ01V1DS R-4775

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