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    NE5510179A Search Results

    NE5510179A Datasheets (3)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE5510179A
    		NEC 3.6 V OPERATION SILICON RF POWER LD-MOS FET Original PDF 61.94KB 8
    NE5510179A-T1
    		NEC 3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. Original PDF 39.18KB 4
    NE5510179A-T1
    		NEC 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIER Original PDF 61.95KB 8

    NE5510179A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE5510179A

    Abstract: NE5510179A-T1
    Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier


    Original     		ne5510179ane5510179a-t1 PDF

    4810 mosfet

    Abstract: mosfet 5730 mosfet 4430 GSM1800 NE5510179A NE5510179A-T1 2.4 ghz mosfet
    Contextual Info: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A


    Original     		ne5510179a24-hour4810 mosfetmosfet 5730+4mosfet 4430gsm1800ne5510179a-t12.4 ghz mosfet PDF

    NE551

    Abstract: NE5510 4810 mosfet GSM1800 NE5510179A NE5510179A-T1
    Contextual Info: PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm PACKAGE OUTLINE 79A


    Original     		ne5510179a24-hourne551ne5510+34810 mosfetgsm1800ne5510179a-t1 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817 PDF

    NEC D 809 F

    Abstract: NE5510179A-T1 VP215 NE5510179A
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		nec d 809 fne5510179a-t1vp215ne5510179a PDF