FET 336 Search Results

MA-336-CP

Contextual Info: O V m iM PlL O G SYSTEM S 336 005164 p s€> Low-Noise, Qui-Fet Dual Operational A m plifier General D escription MA-336 is a dual iow-noise FET input operational am plifier using Analog System’s QUI-FET input tech­ nology. Input noise voltage is only 33% of conventional

fet alternator regulator circuit

Abstract: ic 3361 3361d alternator circuit diagram 200D1 alternator rectifier CS-3361D14 CS-3361DR14 alternator ic connection transistor ignition circuit
Contextual Info: CS-3361 CS-3361 Alternator Voltage Regulator FET Driver Features Description The CS-3361 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3-phase alternators. It drives an external logic level N channel enhancement power FET

Contextual Info: Alternator Voltage Regulator FET Driver Description The CS-3361 integral alternator reg­ ulator integrated circuit provides the voltage regulation for autom o­ tive, 3-phase alternators. It drives an external logic level N channel enhancem ent pow er FET

ic 3361

Abstract: alternator circuit diagram fet alternator regulator circuit alternator ic connection Alternator regulator 0D0322S alternator alternator rectifier alternator diode 0022pF
Contextual Info: CS-3361 CS-3361 Alternator Voltage Regulator FET Driver Description The CS-3361 integral alternator reg­ ulator integrated circuit provides the voltage regulation for automo­ tive, 3-phase alternators. It drives an external logic level N channel enhancem ent pow er FET

Contextual Info: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com­ bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The

8010c

Abstract: EUP8010D TDFN-10 8010-D EUP8010C-JIR1 EUP8010A-JIR1 EUP8010B-JIR1 EUP8010X EUP8010B 200A battery charger
Contextual Info: EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

LD4A

Abstract: High-speed switching P-Channel mos ld3a
Contextual Info: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching

TDFN-10

Abstract: 8010b EUP8010A-JIR1 EUP8010B-JIR1 EUP8010C-JIR1 EUP8010X 8010c
Contextual Info: 芯美电子 EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,

Contextual Info: BUK7Y13-40B N-channel TrenchMOS logic level FET Rev. 01 — 24 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

LFPAK

Abstract: BUK7Y13-40B airbag
Contextual Info: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 02 — 2 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.

SLD-3091FZ

Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Contextual Info: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB

BUK7Y13-40B

Abstract: automotive abs 10S100
Contextual Info: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

Contextual Info: SN74CBT3306 DUAL FET BUS SWITCH SCDS016H − MAY 1995 − REVISED JANUARY 2004 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D OR PW PACKAGE TOP VIEW 1OE 1A 1B GND description/ordering information The SN74CBT3306 dual FET bus switch features

Contextual Info: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

SLD-1083CZ

Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Contextual Info: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage

SN74CBT3306PW

Abstract: SN74CBT3306PWR CU306 SN74CBT3306 SN74CBT3306D SN74CBT3306DE4 SN74CBT3306DG4 SN74CBT3306DR
Contextual Info: SN74CBT3306 DUAL FET BUS SWITCH SCDS016H − MAY 1995 − REVISED JANUARY 2004 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D OR PW PACKAGE TOP VIEW 1OE 1A 1B GND description/ordering information The SN74CBT3306 dual FET bus switch features

PH5030AL

Abstract: PH5030
Contextual Info: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

OPA2131UJ

Contextual Info: O PA OPA1 OPA 131 OPA2 31 2131 O PA OPA131 OPA2131 OPA4131 4131 OP A41 31 131 OPA4 131 SBOS040A – NOVEMBER 1994 – REVISED DECEMBER 2002 General-Purpose FET-INPUT OPERATIONAL AMPLIFIERS FEATURES ● FET INPUT: IB = 50pA max ● LOW OFFSET VOLTAGE: 750µV max

OPA2131UJ

Contextual Info: O PA OPA1 OPA 131 OPA2 31 2131 O PA OPA131 OPA2131 OPA4131 4131 OP A41 31 131 OPA4 131 SBOS040A – NOVEMBER 1994 – REVISED DECEMBER 2002 General-Purpose FET-INPUT OPERATIONAL AMPLIFIERS FEATURES ● FET INPUT: IB = 50pA max ● LOW OFFSET VOLTAGE: 750µV max

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

PSMN5R0-30YL

Abstract: jmb 363
Contextual Info: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

SPF-2086TKZ

Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Contextual Info: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.