FERRO Search Results

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM28V100-TG

Abstract: FM28V100-TGTR tca 335 A
Contextual Info: FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8  High Endurance 100 Trillion 1014 Read/Writes  NoDelay Writes  Page Mode Operation to 33MHz  Advanced High-Reliability Ferroelectric Process

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

rg5H20

Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

1822-HEX

Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Contextual Info: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00013-6v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64V • DESCRIPTION The MB85RC64V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

81116

Abstract: 81-116
Contextual Info: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline

Contextual Info: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-4v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00006-3v0-E FRAM MB85R1002A MB85R1002A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-6v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00025-1v0-E FRAM MB85RS2MT MB85RS2MT is a 2M-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00010-7v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16V • DESCRIPTION The MB85RC16V is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13109–9E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64 • DESCRIPTION The MB85RC64 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

bss 10

Abstract: BSS39 bss47
Contextual Info: RUBYCON AMERICA INC GflE D | TTGOSTÔ □OQDSô'l □ | c a p a c ito rs ^ O.^ “/ / - Q REB M 8 8 —27(BSS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BSS SERIES [For Speaker Crossover Networks, Low Impedance, Miniaturize] • FEATURES # R e d u c e d non-liner distortions through the elimination of ferrom agnetic

GN02018B

Contextual Info: Panasonic GaAs MMICs GN02018B GaAs IC with built-in ferroelectric Unit : mm For mixer with built-in local amplifier of cellular phone Other communication equipment IE • Features • High conversion-gain, low noise, low distortion (IP3) • Single, positive power supply

4501

Contextual Info: Series 4501 Surface Mount Low-Profile Power Toroids POWER DEVICES SERIES 4501 FERROUS ALLOY CORE I I I Parallel Connected Specifications VHte Pot, Terminal #1 5£HE.MAT1£ ù t& rt 4 99 Î 4501- 102M 4501- 104M 4501- 106M 4501 108M 4501' 110M 4501- 112M_ 4501 114M

Contextual Info: www.hamlin.com 59090 Heavy Duty Vane Sensor Features and Benefits Features Benefits Applications • Sensor and magnet contained in single housing • Sensor operates when ferrous vane passes through slot • Normally closed standard, normally closed high voltage or change over

DTM04-3P

Abstract: molex mx camshaft sensor DTM04 Gear Wheel Speed Sensor magnetic stripe SENSOR 1128 J1128 SAE J1128 wire DEUTSCH DTM04
Contextual Info: www.hamlin.com 55505 Flange Mount Hall Effect Geartooth Sensor Features Benefits Applications • Ferrous target sensing • Internal circuit protection • Protection against severe and automotive environments • Self adjusting magnetic range • Automotive grade circuit protection

Contextual Info: Honeywell Magnetic Products ONE AND TWO AXIS MAGNETIC SENSORS HMC1001 HMC1002 FEATURES APPLICATIONS • Measures strength and direction of magnetic fields • Compassing • Medical Instruments • Detects change in magnetic field due to presence of ferromagnetic objects